JPS5617039A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5617039A JPS5617039A JP9358479A JP9358479A JPS5617039A JP S5617039 A JPS5617039 A JP S5617039A JP 9358479 A JP9358479 A JP 9358479A JP 9358479 A JP9358479 A JP 9358479A JP S5617039 A JPS5617039 A JP S5617039A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- coated
- resist mask
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000126 substance Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the generation of an inversion layer under a film by a thin oxide film in a semiconductor device by forming a conductive substance durable for relatively high temperature in a field oxide film and connecting it to a substrate. CONSTITUTION:An SiO2 thin film 9 is formed on an Si substrate 1, a resist mask is formed thereon, an ion is implanted to form an inversion preventive layer 1' thereon, and an SiO2 film 9 is then perforated. Thereafter, a conductive substance 11 durable for relatively high temperature such as polysilicon or the like is accumulated thereon to diffuse the same conductivity impurity as the substrate 1 therein, and an SiO2 thin film 12 is coated thereon. Subsequently, a resist mask is coated thereon, openings are etched thereat, a gate oxide film 6 is formed on the substrate 1 being exposed, and a polysilicon film 7 is laminated thereon. Then, a resist mask is coated thereon, openings are selectively perforated thereat, and source and drain layers 5 are formed thereon. Since this configuration has equal potential in the film 11 to the substrate even if a voltage higher by double than the power supply voltage is applied to the polysilicon layer 8 for wiring, the inversion layer is formed only on the surface of the film 11 in the boundary between the films 12 and 11, but is not produced on the surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358479A JPS5617039A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358479A JPS5617039A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5617039A true JPS5617039A (en) | 1981-02-18 |
Family
ID=14086322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9358479A Pending JPS5617039A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617039A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58124953U (en) * | 1981-09-18 | 1983-08-25 | 三洋電機株式会社 | Semiconductor integrated circuit device |
| JPS6045038A (en) * | 1983-08-23 | 1985-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS6175555A (en) * | 1984-07-02 | 1986-04-17 | テキサス インスツルメンツ インコ−ポレイテツド | How to make a CMOS twin well semiconductor device |
| JPS61248459A (en) * | 1985-04-25 | 1986-11-05 | Nippon Telegr & Teleph Corp <Ntt> | Complementary type mis semiconductor integrated circuit |
| JPS6248041A (en) * | 1985-08-28 | 1987-03-02 | Nec Corp | Semiconductor integrated circuit device |
-
1979
- 1979-07-20 JP JP9358479A patent/JPS5617039A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58124953U (en) * | 1981-09-18 | 1983-08-25 | 三洋電機株式会社 | Semiconductor integrated circuit device |
| JPS6045038A (en) * | 1983-08-23 | 1985-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS6175555A (en) * | 1984-07-02 | 1986-04-17 | テキサス インスツルメンツ インコ−ポレイテツド | How to make a CMOS twin well semiconductor device |
| JPS61248459A (en) * | 1985-04-25 | 1986-11-05 | Nippon Telegr & Teleph Corp <Ntt> | Complementary type mis semiconductor integrated circuit |
| JPS6248041A (en) * | 1985-08-28 | 1987-03-02 | Nec Corp | Semiconductor integrated circuit device |
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