JPS567482A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS567482A JPS567482A JP8136079A JP8136079A JPS567482A JP S567482 A JPS567482 A JP S567482A JP 8136079 A JP8136079 A JP 8136079A JP 8136079 A JP8136079 A JP 8136079A JP S567482 A JPS567482 A JP S567482A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- substrate
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To minimize the memory size, in a semiconductor device including an IGFET, by fabricating the opening and gate of the field oxide film of the memory cell, gate part and source and drain regions by a self-matching method. CONSTITUTION:A P<+>-type inversion preventive region 15 is diffused and formed at the peripheral part of a P-type Si substrate 10, and a thick field SiO2 film 14 is provided on the above region 15. On the surface of the substrate 10 encircled by the above film 14, there are laminated and coated first gate SiO2 film 11, the first polycrystal Si layer 12, and the first layer insulating Si3N4 film 13. Then, the second polycrystal layer 16 is grown on the full surface of the substrate, and the laminate is subjected to patterning, a N<+>-type source region 20 and a drain region 21 are diffused and formed in the substrate at both sides using the laminate as a mask. Thereafter, on the full surfaces of the regions there is applied the second layer insulating PSG film 26, and an opening is provided, and while a metal wiring layer 27 contacting the region 20 is extended on a film 26, it is formed to manufacture a semiconductor device including an IGFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8136079A JPS567482A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8136079A JPS567482A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS567482A true JPS567482A (en) | 1981-01-26 |
| JPS6244700B2 JPS6244700B2 (en) | 1987-09-22 |
Family
ID=13744168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8136079A Granted JPS567482A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS567482A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587833A (en) * | 1981-06-30 | 1983-01-17 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Circuit device assembly |
| JPS5850771A (en) * | 1981-09-21 | 1983-03-25 | Hitachi Ltd | High integration rom enable of rewriting and manufacture thereof |
| JPS63205964A (en) * | 1987-02-21 | 1988-08-25 | Toshiba Corp | Semiconductor storage device and its manufacture |
-
1979
- 1979-06-29 JP JP8136079A patent/JPS567482A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587833A (en) * | 1981-06-30 | 1983-01-17 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | Circuit device assembly |
| JPS5850771A (en) * | 1981-09-21 | 1983-03-25 | Hitachi Ltd | High integration rom enable of rewriting and manufacture thereof |
| JPS63205964A (en) * | 1987-02-21 | 1988-08-25 | Toshiba Corp | Semiconductor storage device and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244700B2 (en) | 1987-09-22 |
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