[go: up one dir, main page]

JPS55151361A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS55151361A
JPS55151361A JP5982279A JP5982279A JPS55151361A JP S55151361 A JPS55151361 A JP S55151361A JP 5982279 A JP5982279 A JP 5982279A JP 5982279 A JP5982279 A JP 5982279A JP S55151361 A JPS55151361 A JP S55151361A
Authority
JP
Japan
Prior art keywords
film
arsenic
electrode
gate electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5982279A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwai
Satoru Maeda
Takeshi Matsuo
Isao Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP5982279A priority Critical patent/JPS55151361A/en
Publication of JPS55151361A publication Critical patent/JPS55151361A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To secure the effective channel as designed in a semiconductor device by doping an arsenic at the first layer polycrystalline silicon electrode. CONSTITUTION:After forming selectively a field oxide film 12 on a p<->-type silicon substrate 11, the first gate oxide films 131, 132 thermally oxidized on the surface of an element forming region, and the first layer polycrystalline silicon film 14 is accumulated thereon. An arsenic is doped at the film 14. The arsenic is then diffused in the film 14 by the thermal treatment. Subsequently, the film 14 is etched to form a capacitor electrode 141, and a gate electrode 142. Thereafter, the second gate oxide films 151-154 are formed. Successively, a gate electrode 161 of a transistor is formed, and arsenic is doped at the gate electrode 161, and a shallow n<+>-type layers 171-17<3> are formed to become the source and the drain of a MOSFET on the substrate surface.
JP5982279A 1979-05-16 1979-05-16 Fabricating method of semiconductor device Pending JPS55151361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5982279A JPS55151361A (en) 1979-05-16 1979-05-16 Fabricating method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5982279A JPS55151361A (en) 1979-05-16 1979-05-16 Fabricating method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55151361A true JPS55151361A (en) 1980-11-25

Family

ID=13124294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5982279A Pending JPS55151361A (en) 1979-05-16 1979-05-16 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55151361A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827360A (en) * 1981-07-24 1983-02-18 インテル・コ−ポレ−シヨン Metal-oxide film-semiconductor memory manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502472A (en) * 1973-05-08 1975-01-11
JPS50118662A (en) * 1974-03-01 1975-09-17
JPS5371588A (en) * 1976-12-07 1978-06-26 Mitsubishi Electric Corp Manufacture of semiconductor memory device
JPS53112687A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS502472A (en) * 1973-05-08 1975-01-11
JPS50118662A (en) * 1974-03-01 1975-09-17
JPS5371588A (en) * 1976-12-07 1978-06-26 Mitsubishi Electric Corp Manufacture of semiconductor memory device
JPS53112687A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827360A (en) * 1981-07-24 1983-02-18 インテル・コ−ポレ−シヨン Metal-oxide film-semiconductor memory manufacturing method

Similar Documents

Publication Publication Date Title
JPS5775453A (en) Semiconductor device and manufacture thereof
IL43098A (en) Complementary pair of field effect transistors and their production
JPS5688354A (en) Semiconductor integrated circuit device
JPS57109367A (en) Semiconductor memory device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5633881A (en) Manufacture of semiconductor device
JPS55151361A (en) Fabricating method of semiconductor device
JPS568849A (en) Manufacture of semiconductor integrated circuit
JPS55107229A (en) Method of manufacturing semiconductor device
JPS567482A (en) Manufacturing of semiconductor device
JPS57194583A (en) Mos semiconductor device and manufacture thereof
JPS57100760A (en) Manufacture of semiconductor device
JPS5788772A (en) Vertical mis semiconductor device
JPS5753958A (en) Semiconductor device
JPS6057968A (en) Manufacture of mos transistor
JPS5559778A (en) Method of fabricating semiconductor device
JPS5618468A (en) Manufacture of mos semiconductor device
JPS6412575A (en) Manufacture of mos semiconductor device
JPS56133869A (en) Mos type semiconductor device and manufacture thereof
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS577968A (en) Semiconductor device
JPS5721855A (en) Manufacture of complementary mos semiconductor device
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS57134971A (en) Mis type simiconductor device and manufacture of the same
JPS57204145A (en) Manufacture of semiconductor device