JPS5683976A - Semiconductor device and manufacture - Google Patents
Semiconductor device and manufactureInfo
- Publication number
- JPS5683976A JPS5683976A JP16125579A JP16125579A JPS5683976A JP S5683976 A JPS5683976 A JP S5683976A JP 16125579 A JP16125579 A JP 16125579A JP 16125579 A JP16125579 A JP 16125579A JP S5683976 A JPS5683976 A JP S5683976A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- type
- impurity
- polycrystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain an MIS type element in a fine pattern by a method wherein when a source, drain and wiring layers respectively are formed on a semiconductor substrate, a polycrystal Si film not containing impurity is provided at first and those layers are formed by means of an impurity diffusion. CONSTITUTION:An SiO2 film 2 is cover-attached on a P type Si substrate 1, masks such as resist films 6 are provided on an element formed region 4 and a diffusion wiring formed region 5, and a P<-> type inversion preventive region 7 is diffusion- formed on the substrate 1 exposed between those regions 4, 5. Then, the masks are removed and a heat treatment is applied to make a thick field SiO2 film 8 be grown on the region 7, the polycrystal Si film 9 not containing the impurity be accumulated on the whole surface, and openings are formed on the region 4 and film 8 by selectively applying an etching. Then, the film 9 remained is covered with an SiO2 film 11 on the surface, and the polycrystal Si gate electrode 12 is fixed only in the opening 10 of the region 4 through the gate SiO2 film 11. In the following, an N type impurity is diffused to give conductivity to the film 9 and also to form the N<+> type source, drain regions 13, 14 and the wiring layer 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16125579A JPS5683976A (en) | 1979-12-12 | 1979-12-12 | Semiconductor device and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16125579A JPS5683976A (en) | 1979-12-12 | 1979-12-12 | Semiconductor device and manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5683976A true JPS5683976A (en) | 1981-07-08 |
Family
ID=15731605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16125579A Pending JPS5683976A (en) | 1979-12-12 | 1979-12-12 | Semiconductor device and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5683976A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5335479A (en) * | 1976-09-14 | 1978-04-01 | Agency Of Ind Science & Technol | Semiconductor unit |
| JPS54131882A (en) * | 1978-04-03 | 1979-10-13 | Nec Corp | Semiconductor device and its manufacture |
-
1979
- 1979-12-12 JP JP16125579A patent/JPS5683976A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5335479A (en) * | 1976-09-14 | 1978-04-01 | Agency Of Ind Science & Technol | Semiconductor unit |
| JPS54131882A (en) * | 1978-04-03 | 1979-10-13 | Nec Corp | Semiconductor device and its manufacture |
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