JPS567482A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS567482A JPS567482A JP8136079A JP8136079A JPS567482A JP S567482 A JPS567482 A JP S567482A JP 8136079 A JP8136079 A JP 8136079A JP 8136079 A JP8136079 A JP 8136079A JP S567482 A JPS567482 A JP S567482A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- substrate
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8136079A JPS567482A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8136079A JPS567482A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS567482A true JPS567482A (en) | 1981-01-26 |
| JPS6244700B2 JPS6244700B2 (ja) | 1987-09-22 |
Family
ID=13744168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8136079A Granted JPS567482A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS567482A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587833A (ja) * | 1981-06-30 | 1983-01-17 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 回路装置組立体 |
| JPS5850771A (ja) * | 1981-09-21 | 1983-03-25 | Hitachi Ltd | 再書込み可能な高集積ｒｏｍ及びその製造方法 |
| JPS63205964A (ja) * | 1987-02-21 | 1988-08-25 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
-
1979
- 1979-06-29 JP JP8136079A patent/JPS567482A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587833A (ja) * | 1981-06-30 | 1983-01-17 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 回路装置組立体 |
| JPS5850771A (ja) * | 1981-09-21 | 1983-03-25 | Hitachi Ltd | 再書込み可能な高集積ｒｏｍ及びその製造方法 |
| JPS63205964A (ja) * | 1987-02-21 | 1988-08-25 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244700B2 (ja) | 1987-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS55160457A (en) | Semiconductor device | |
| JPS5758363A (en) | Manufacture of mos type semiconductor device | |
| JPS567482A (en) | Manufacturing of semiconductor device | |
| JPS54139493A (en) | Manufacture of semiconductor device containing poly-crystal silicon layer | |
| JPS5688358A (en) | Manufacture of semiconductor device | |
| JPS5742169A (en) | Production of semiconductor device | |
| JPS5583267A (en) | Method of fabricating semiconductor device | |
| JPS5513953A (en) | Complementary integrated circuit | |
| JPS577153A (en) | Preparation of semiconductor device | |
| JPS5694671A (en) | Manufacture of mis field-effect semiconductor device | |
| JPS56135972A (en) | Manufacture of semiconductor device | |
| JPS57207374A (en) | Manufacture of semiconductor device | |
| JPS5748248A (en) | Manufacture of semiconductor device | |
| JPS6465875A (en) | Thin film transistor and manufacture thereof | |
| JPS56133869A (en) | Mos type semiconductor device and manufacture thereof | |
| JPS54104782A (en) | Mos type semiconductor device | |
| JPS5683974A (en) | Semiconductor device and manufacture | |
| JPS5683976A (en) | Semiconductor device and manufacture | |
| JPS5718362A (en) | Semiconductor device and manufacture thereof | |
| JPS55151361A (en) | Fabricating method of semiconductor device | |
| JPS5656675A (en) | Semiconductor device on insulated substrate | |
| JPS5642372A (en) | Manufacture of semiconductor device | |
| JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
| JPS55105333A (en) | Manufacture of semiconductor integrated circuit | |
| JPS55130169A (en) | Method of fabricating semiconductor device |