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JPS5664467A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS5664467A
JPS5664467A JP14064379A JP14064379A JPS5664467A JP S5664467 A JPS5664467 A JP S5664467A JP 14064379 A JP14064379 A JP 14064379A JP 14064379 A JP14064379 A JP 14064379A JP S5664467 A JPS5664467 A JP S5664467A
Authority
JP
Japan
Prior art keywords
film
polycrystalline
electrode
films
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14064379A
Other languages
Japanese (ja)
Inventor
Toru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14064379A priority Critical patent/JPS5664467A/en
Publication of JPS5664467A publication Critical patent/JPS5664467A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To decrease the resistance of source and drain regions by a method wherein electrode patterns with two layer structure consisting of a polycrystalline Si film and a metallic film or a polycrystalline Si film and a metallic silicide film are each formed on the source and drain regions electrically separating the patterns in the MOS type semiconductor device. CONSTITUTION:A thick field oxide film 12 is made up to a fringe section of a p type Si substrate 11, a polycrystalline Si gate electrode 14 by phosphor dope is built up at a center section of the substrate 11 exposing being surrounded by the oxide film through a gate oxide film 16, and the electrode 14 is surrounded by an SiO2 film 15. The whole surface is coated with a polycrystalline Si film 17, impurities are diffused through the film 17, n<+> type source and drain regions 18, 19 are formed into the substrate 11 at both sides of the electrode 14 while the film 17 is also provided with conductivity, the whole surface is covered with an MoSi2 film, a section on the electrode 14 is removed by means of plasma etching, and electrode patterns 21, 22 are obtained which consist of films 171, 201 and 172, 202 in which the polycrystalline films and the MoSi2 films are laminated and each separated.
JP14064379A 1979-10-31 1979-10-31 Mos type semiconductor device Pending JPS5664467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14064379A JPS5664467A (en) 1979-10-31 1979-10-31 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14064379A JPS5664467A (en) 1979-10-31 1979-10-31 Mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5664467A true JPS5664467A (en) 1981-06-01

Family

ID=15273434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14064379A Pending JPS5664467A (en) 1979-10-31 1979-10-31 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5664467A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62117368A (en) * 1985-11-15 1987-05-28 Mitsubishi Electric Corp Semiconductor device
JPS63115376A (en) * 1985-10-30 1988-05-19 ハリス　コーポレイション Mos field effect transistor and manufacture of the same
JPH07254701A (en) * 1994-03-15 1995-10-03 Nec Corp Semiconductor device and its manufacturing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248477A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device
JPS5255379A (en) * 1975-10-31 1977-05-06 Toshiba Corp Semiconductor device
JPS5286779A (en) * 1976-01-14 1977-07-19 Hitachi Ltd Semiconductor device
JPS5289464A (en) * 1976-01-21 1977-07-27 Hitachi Ltd Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248477A (en) * 1975-10-16 1977-04-18 Fujitsu Ltd Process for production of semiconductor device
JPS5255379A (en) * 1975-10-31 1977-05-06 Toshiba Corp Semiconductor device
JPS5286779A (en) * 1976-01-14 1977-07-19 Hitachi Ltd Semiconductor device
JPS5289464A (en) * 1976-01-21 1977-07-27 Hitachi Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63115376A (en) * 1985-10-30 1988-05-19 ハリス　コーポレイション Mos field effect transistor and manufacture of the same
JPS62117368A (en) * 1985-11-15 1987-05-28 Mitsubishi Electric Corp Semiconductor device
JPH07254701A (en) * 1994-03-15 1995-10-03 Nec Corp Semiconductor device and its manufacturing

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