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JPS5571058A - Substrate biasing circuit - Google Patents

Substrate biasing circuit

Info

Publication number
JPS5571058A
JPS5571058A JP14507478A JP14507478A JPS5571058A JP S5571058 A JPS5571058 A JP S5571058A JP 14507478 A JP14507478 A JP 14507478A JP 14507478 A JP14507478 A JP 14507478A JP S5571058 A JPS5571058 A JP S5571058A
Authority
JP
Japan
Prior art keywords
node
potential
output
diode
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14507478A
Other languages
English (en)
Other versions
JPS5951750B2 (ja
Inventor
Seiji Emoto
Shigeki Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53145074A priority Critical patent/JPS5951750B2/ja
Publication of JPS5571058A publication Critical patent/JPS5571058A/ja
Publication of JPS5951750B2 publication Critical patent/JPS5951750B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP53145074A 1978-11-24 1978-11-24 基板バイアス発生回路 Expired JPS5951750B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53145074A JPS5951750B2 (ja) 1978-11-24 1978-11-24 基板バイアス発生回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53145074A JPS5951750B2 (ja) 1978-11-24 1978-11-24 基板バイアス発生回路

Publications (2)

Publication Number Publication Date
JPS5571058A true JPS5571058A (en) 1980-05-28
JPS5951750B2 JPS5951750B2 (ja) 1984-12-15

Family

ID=15376770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53145074A Expired JPS5951750B2 (ja) 1978-11-24 1978-11-24 基板バイアス発生回路

Country Status (1)

Country Link
JP (1) JPS5951750B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454431A (en) * 1980-03-11 1984-06-12 Siemens Aktiengesellschaft Semiconductor circuit with a circuit part controlled by a substrate bias
US5043597A (en) * 1989-06-19 1991-08-27 Kabushiki Kaisha Toshiba Substrate bias generation circuit used in semiconductor integrated circuit
US7307464B2 (en) * 2005-10-12 2007-12-11 Semiconductor Manufacturing International (Shanghai) Corporation System and method for switching between high voltage and low voltage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454431A (en) * 1980-03-11 1984-06-12 Siemens Aktiengesellschaft Semiconductor circuit with a circuit part controlled by a substrate bias
US5043597A (en) * 1989-06-19 1991-08-27 Kabushiki Kaisha Toshiba Substrate bias generation circuit used in semiconductor integrated circuit
US7307464B2 (en) * 2005-10-12 2007-12-11 Semiconductor Manufacturing International (Shanghai) Corporation System and method for switching between high voltage and low voltage

Also Published As

Publication number Publication date
JPS5951750B2 (ja) 1984-12-15

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