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JPS5559741A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5559741A
JPS5559741A JP13163878A JP13163878A JPS5559741A JP S5559741 A JPS5559741 A JP S5559741A JP 13163878 A JP13163878 A JP 13163878A JP 13163878 A JP13163878 A JP 13163878A JP S5559741 A JPS5559741 A JP S5559741A
Authority
JP
Japan
Prior art keywords
hole
lower electrode
film
upper electrode
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13163878A
Other languages
Japanese (ja)
Inventor
Tokio Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13163878A priority Critical patent/JPS5559741A/en
Publication of JPS5559741A publication Critical patent/JPS5559741A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain excellent continuity by a minute through hole, by forming the through hole to a layer insulation film in an organic material mounted onto a lower electrode, by etching the hole by means of sputtering and by installing an upper electrode by making up a metallic film in vacuum.
CONSTITUTION: In a monolithic IC or a hybrid IC, an organic film 1 with high heat-proof in polyimide resin, etc. is built up on a lower electrode 4 as a layer insulation film. A through hole is formed at a necessary location of the organic film in order to aim at electric continuity with an upper electrode, and an insulating film 3 produced on a surface of the lower electrode of a through hole portion is removed by means of etching by sputtering treatment in Ar. An upper electrode is continuously made up by means of evaporation, etc. without exposing the surface of the lower electrode of the through hole portion purified to atmospheric air. Thus, the through hole can be fined without increasing the resistance of the through hole.
COPYRIGHT: (C)1980,JPO&Japio
JP13163878A 1978-10-27 1978-10-27 Preparation of semiconductor device Pending JPS5559741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13163878A JPS5559741A (en) 1978-10-27 1978-10-27 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13163878A JPS5559741A (en) 1978-10-27 1978-10-27 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5559741A true JPS5559741A (en) 1980-05-06

Family

ID=15062727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13163878A Pending JPS5559741A (en) 1978-10-27 1978-10-27 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5559741A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893354A (en) * 1981-11-30 1983-06-03 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61170050A (en) * 1985-01-17 1986-07-31 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Formation of low resistance contact
JPS61214538A (en) * 1985-03-20 1986-09-24 Hitachi Ltd Wiring structure and its manufacture
JPH01201938A (en) * 1988-02-05 1989-08-14 Fujitsu Ltd Formation of multilayer electrode wiring layer in semiconductor device
JPH0327526A (en) * 1989-06-23 1991-02-05 Nec Corp Manufacture of semiconductor integrated circuit device
JP2011187969A (en) * 2005-02-25 2011-09-22 Casio Computer Co Ltd Method of manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53107285A (en) * 1977-03-02 1978-09-19 Hitachi Ltd Production of wiring structural body

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53107285A (en) * 1977-03-02 1978-09-19 Hitachi Ltd Production of wiring structural body

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893354A (en) * 1981-11-30 1983-06-03 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS61170050A (en) * 1985-01-17 1986-07-31 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション Formation of low resistance contact
JPS61214538A (en) * 1985-03-20 1986-09-24 Hitachi Ltd Wiring structure and its manufacture
JPH01201938A (en) * 1988-02-05 1989-08-14 Fujitsu Ltd Formation of multilayer electrode wiring layer in semiconductor device
JPH0327526A (en) * 1989-06-23 1991-02-05 Nec Corp Manufacture of semiconductor integrated circuit device
JP2011187969A (en) * 2005-02-25 2011-09-22 Casio Computer Co Ltd Method of manufacturing semiconductor device

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