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JPS5516428A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5516428A
JPS5516428A JP8898778A JP8898778A JPS5516428A JP S5516428 A JPS5516428 A JP S5516428A JP 8898778 A JP8898778 A JP 8898778A JP 8898778 A JP8898778 A JP 8898778A JP S5516428 A JPS5516428 A JP S5516428A
Authority
JP
Japan
Prior art keywords
emitter
base
pair
electrode
current capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8898778A
Other languages
Japanese (ja)
Other versions
JPS5643620B2 (en
Inventor
Kenichi Muramoto
Yutaka Tomizawa
Keizo Tani
Masaaki Iwanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8898778A priority Critical patent/JPS5516428A/en
Publication of JPS5516428A publication Critical patent/JPS5516428A/en
Publication of JPS5643620B2 publication Critical patent/JPS5643620B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To attach a pair of good conductive emitter electrode for each split emitter to make advantageous in view of current capacity and to make bast suited for the case where high powering is desired.
CONSTITUTION: To provide contact holes 11 and 22 on an emitter layer 4 as well as on a base contact layer 9 in the prescribed positions of an insulated membrane 5. Then by avacuum evaporation method the whole surface of the semiconductor base will be covered and attached with an aluminium layer followed by pattering by a photo etching method to form a base electrode 7 and electrodes 72 and 73. By arranging a pair of good conductive emitter electrode 72 for each split emitter, it becomes advantageous in view of current capacity and best suited for the case where high powering is desired.
COPYRIGHT: (C)1980,JPO&Japio
JP8898778A 1978-07-21 1978-07-21 Semiconductor device Granted JPS5516428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8898778A JPS5516428A (en) 1978-07-21 1978-07-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8898778A JPS5516428A (en) 1978-07-21 1978-07-21 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP53118949A Division JPS5812734B2 (en) 1978-09-27 1978-09-27 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5516428A true JPS5516428A (en) 1980-02-05
JPS5643620B2 JPS5643620B2 (en) 1981-10-14

Family

ID=13958143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8898778A Granted JPS5516428A (en) 1978-07-21 1978-07-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5516428A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140159A (en) * 1982-02-16 1983-08-19 Nec Corp Transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140159A (en) * 1982-02-16 1983-08-19 Nec Corp Transistor

Also Published As

Publication number Publication date
JPS5643620B2 (en) 1981-10-14

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