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JPS5477578A - High frequency high output bipolar transistor - Google Patents

High frequency high output bipolar transistor

Info

Publication number
JPS5477578A
JPS5477578A JP14526677A JP14526677A JPS5477578A JP S5477578 A JPS5477578 A JP S5477578A JP 14526677 A JP14526677 A JP 14526677A JP 14526677 A JP14526677 A JP 14526677A JP S5477578 A JPS5477578 A JP S5477578A
Authority
JP
Japan
Prior art keywords
layer
bipolar transistor
sno
emitter
output bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14526677A
Other languages
Japanese (ja)
Inventor
Yoshiharu Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14526677A priority Critical patent/JPS5477578A/en
Publication of JPS5477578A publication Critical patent/JPS5477578A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain stabilizing resistances of the structure of a small parasitic capacitance by forming a conductive glass film evenly over the entire emitere surface.
CONSTITUTION: A SnO2 layer 11 having a suitable resistivity and thickness and a SnO2 layer 11' having an extremely low resistivity are laminated on a wafer formed with base connection layers 8. Next, a SiO2 film 5 is selectively formed and the films 11', 11 are etched away. Thereafter, electrodes are formed in an ordinary manner. This method enables stabilizing resistances to be evenly distributed to the entire surface of the emitter layer 4 and this structure does not increase the parasitic capacity between the emitter and collector.
COPYRIGHT: (C)1979,JPO&Japio
JP14526677A 1977-12-02 1977-12-02 High frequency high output bipolar transistor Pending JPS5477578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14526677A JPS5477578A (en) 1977-12-02 1977-12-02 High frequency high output bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14526677A JPS5477578A (en) 1977-12-02 1977-12-02 High frequency high output bipolar transistor

Publications (1)

Publication Number Publication Date
JPS5477578A true JPS5477578A (en) 1979-06-21

Family

ID=15381147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14526677A Pending JPS5477578A (en) 1977-12-02 1977-12-02 High frequency high output bipolar transistor

Country Status (1)

Country Link
JP (1) JPS5477578A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0814508A1 (en) * 1996-06-21 1997-12-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having element with high breakdown voltage
EP1134811A1 (en) * 1998-11-17 2001-09-19 Japan Science and Technology Corporation Transistor and semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0814508A1 (en) * 1996-06-21 1997-12-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having element with high breakdown voltage
US5731628A (en) * 1996-06-21 1998-03-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having element with high breakdown voltage
US5907182A (en) * 1996-06-21 1999-05-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having element with high breakdown voltage
EP1134811A1 (en) * 1998-11-17 2001-09-19 Japan Science and Technology Corporation Transistor and semiconductor device
EP1134811A4 (en) * 1998-11-17 2005-09-14 Japan Science & Tech Agency TRANSISTOR AND SEMICONDUCTOR DEVICE
EP1746659A2 (en) * 1998-11-17 2007-01-24 Japan Science and Technology Agency Transistor and semiconductor device
EP1746659A3 (en) * 1998-11-17 2008-07-23 Japan Science and Technology Agency Transistor and semiconductor device

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