JPS5477578A - High frequency high output bipolar transistor - Google Patents
High frequency high output bipolar transistorInfo
- Publication number
- JPS5477578A JPS5477578A JP14526677A JP14526677A JPS5477578A JP S5477578 A JPS5477578 A JP S5477578A JP 14526677 A JP14526677 A JP 14526677A JP 14526677 A JP14526677 A JP 14526677A JP S5477578 A JPS5477578 A JP S5477578A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- bipolar transistor
- sno
- emitter
- output bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 2
- 230000000087 stabilizing effect Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14526677A JPS5477578A (en) | 1977-12-02 | 1977-12-02 | High frequency high output bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14526677A JPS5477578A (en) | 1977-12-02 | 1977-12-02 | High frequency high output bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5477578A true JPS5477578A (en) | 1979-06-21 |
Family
ID=15381147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14526677A Pending JPS5477578A (en) | 1977-12-02 | 1977-12-02 | High frequency high output bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5477578A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0814508A1 (en) * | 1996-06-21 | 1997-12-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having element with high breakdown voltage |
| EP1134811A4 (en) * | 1998-11-17 | 2005-09-14 | Japan Science & Tech Agency | TRANSISTOR AND SEMICONDUCTOR DEVICE |
-
1977
- 1977-12-02 JP JP14526677A patent/JPS5477578A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0814508A1 (en) * | 1996-06-21 | 1997-12-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having element with high breakdown voltage |
| US5731628A (en) * | 1996-06-21 | 1998-03-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having element with high breakdown voltage |
| US5907182A (en) * | 1996-06-21 | 1999-05-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having element with high breakdown voltage |
| EP1134811A4 (en) * | 1998-11-17 | 2005-09-14 | Japan Science & Tech Agency | TRANSISTOR AND SEMICONDUCTOR DEVICE |
| EP1746659A3 (en) * | 1998-11-17 | 2008-07-23 | Japan Science and Technology Agency | Transistor and semiconductor device |
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