JPS5766667A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5766667A JPS5766667A JP55141738A JP14173880A JPS5766667A JP S5766667 A JPS5766667 A JP S5766667A JP 55141738 A JP55141738 A JP 55141738A JP 14173880 A JP14173880 A JP 14173880A JP S5766667 A JPS5766667 A JP S5766667A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa
- forming
- type diffused
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/291—Gate electrodes for thyristors
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To prevent the shortcircuit in a wide semiconductor layer region of a semiconductor device by not forming an electrode at the relatively wide part of the region of a semiconductor layer at the bottom of a mesa type valley part and forming an insulator layer on the semiconductor layer. CONSTITUTION:A p type diffused layer is used as an anode 21, an n type diffused layer is formed thereon to form a base 22, and a p type diffused layer is formed to construct a gate 23. An n<+> type diffused layer is formed on the gate 23, and a cathode 24 is formed by mesa etching. An oxidized film 25 is formed on the mesa surface, and then the film 25 of the parts forming a cathode electrode corresponding to the top of the mesa structure and forming a gate electrode corresponding to the bottom of the mesa structure valley part are selectively etched. Then, cathode electrode 28 and gate electrode 27 are formed, an insulator layer 29 is then formed, and the part on the cathode electrode is selectively etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141738A JPS5766667A (en) | 1980-10-09 | 1980-10-09 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141738A JPS5766667A (en) | 1980-10-09 | 1980-10-09 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5766667A true JPS5766667A (en) | 1982-04-22 |
| JPS6122869B2 JPS6122869B2 (en) | 1986-06-03 |
Family
ID=15299049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55141738A Granted JPS5766667A (en) | 1980-10-09 | 1980-10-09 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5766667A (en) |
-
1980
- 1980-10-09 JP JP55141738A patent/JPS5766667A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6122869B2 (en) | 1986-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57117276A (en) | Semiconductor device | |
| JPS57172765A (en) | Electrostatic induction thyristor | |
| JPS5766667A (en) | Semiconductor device | |
| JPS57201078A (en) | Semiconductor and its manufacture | |
| JPS54113273A (en) | Field effect-type switching element | |
| JPS55150271A (en) | Semiconductor device | |
| JPS5519881A (en) | Fieldeffect transistor | |
| JPS575359A (en) | Semiconductor device | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS5713758A (en) | Semiconductor device | |
| JPS6467970A (en) | Thin film transistor | |
| JPS5658258A (en) | Semiconductor integrated circuit | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS5291382A (en) | Insulating gate type field effect transistor | |
| JPS5423375A (en) | Manufacture of schottky barrier type electrode | |
| JPS5730377A (en) | Semiconductor device and manufacture thereof | |
| JPS55113373A (en) | Semiconductor device | |
| JPS5578568A (en) | Manufacture of semiconductor device | |
| JPS5721854A (en) | Semiconductor device | |
| JPS54162484A (en) | Manufacture of semiconductor device | |
| JPS5494288A (en) | 2 terminal reverse conducting thyristor | |
| JPS55154760A (en) | Semiconductor device | |
| JPS5516428A (en) | Semiconductor device | |
| JPS5732684A (en) | Manufacture of semiconductor device | |
| JPS5575254A (en) | Semiconductor device |