[go: up one dir, main page]

JPS5494288A - 2 terminal reverse conducting thyristor - Google Patents

2 terminal reverse conducting thyristor

Info

Publication number
JPS5494288A
JPS5494288A JP141478A JP141478A JPS5494288A JP S5494288 A JPS5494288 A JP S5494288A JP 141478 A JP141478 A JP 141478A JP 141478 A JP141478 A JP 141478A JP S5494288 A JPS5494288 A JP S5494288A
Authority
JP
Japan
Prior art keywords
structure part
layer
base layer
thyristor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP141478A
Other languages
Japanese (ja)
Inventor
Hiroshi Gamo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP141478A priority Critical patent/JPS5494288A/en
Publication of JPS5494288A publication Critical patent/JPS5494288A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To reduce breakover current by providing a groove from element surface down to base layer at the boundary part of the diode structure part and thyristor structure part of a thyristor element thereby substantially increasing the resistance of the base layer. CONSTITUTION:An N type base layer 3 is formed on one surface of a P type base layer 2 of high specific resistance and a P type emitter region 5 is provided therein. An N type emitter region 4 is formed in the other surface of the layer 2. Next, an anode electrode 7 is deposited over the entire surface of the layer 3 including the region 5 and a cathode electrode 6 over the entire surface of the layer 2 including the region 4, whereby an element 1 consisting of a diode structure part D and a thyristor structure part T is constituted. Thereafter, a groove 8 is etched from the surface of the electrode 6 side down to the inside of the layer 2 and its surface is covered with a passivation film 9 of low melting point glass. Then, the resistance from the thyristor structure part T of the high specific resistance base layer 2 to the diode structure part D increases and the breakover current of the thyristor structure part T decreases.
JP141478A 1978-01-09 1978-01-09 2 terminal reverse conducting thyristor Pending JPS5494288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP141478A JPS5494288A (en) 1978-01-09 1978-01-09 2 terminal reverse conducting thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP141478A JPS5494288A (en) 1978-01-09 1978-01-09 2 terminal reverse conducting thyristor

Publications (1)

Publication Number Publication Date
JPS5494288A true JPS5494288A (en) 1979-07-25

Family

ID=11500816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP141478A Pending JPS5494288A (en) 1978-01-09 1978-01-09 2 terminal reverse conducting thyristor

Country Status (1)

Country Link
JP (1) JPS5494288A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633877A (en) * 1979-08-28 1981-04-04 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633877A (en) * 1979-08-28 1981-04-04 Nec Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5598858A (en) Gate turn-off thyristor
JPS5788771A (en) Electrostatic induction thyristor
JPS57117276A (en) Semiconductor device
JPS5637683A (en) Semiconductor rectifying device
JPS55102267A (en) Semiconductor control element
JPS5739574A (en) Semiconductor device
JPS5494288A (en) 2 terminal reverse conducting thyristor
JPS5561063A (en) Schottky barrier diode built-in transistor
JPS5559769A (en) Switching transistor
JPS5596678A (en) Reverse conducting thyristor
JPS56124263A (en) Semiconductor device
JPS57207381A (en) High-speed diode
JPS5423375A (en) Manufacture of schottky barrier type electrode
JPS5499579A (en) Two terminals reverse conducting thyristor
JPS57206072A (en) Semiconductor device
JPS54100671A (en) Transistor
JPS56101779A (en) Schottky barrier diode
JPS5694666A (en) Thyristor of inverse continuity
JPS57128982A (en) Semiconductor device
JPS5414684A (en) Manufacture of schottky barrier diode
JPS57208170A (en) Composite transistor
JPS56148872A (en) Schottky barrier diode
JPS5766667A (en) Semiconductor device
JPS54143080A (en) Semiconductor device
JPS5790976A (en) Thyristor