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JPS5633877A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5633877A
JPS5633877A JP10996279A JP10996279A JPS5633877A JP S5633877 A JPS5633877 A JP S5633877A JP 10996279 A JP10996279 A JP 10996279A JP 10996279 A JP10996279 A JP 10996279A JP S5633877 A JPS5633877 A JP S5633877A
Authority
JP
Japan
Prior art keywords
junction
layer
diode
current
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10996279A
Other languages
Japanese (ja)
Inventor
Shinichi Shiyugiyou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10996279A priority Critical patent/JPS5633877A/en
Publication of JPS5633877A publication Critical patent/JPS5633877A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To make it possible to design the both forward current and backward current can be the optimum characteristic independently by a method wherein the route of the forward current and the backward current are separated. CONSTITUTION:A diode N-layer 10 different from an intermediate N-layer 4 is arranged on the surface of the intermediate P-layer 5, and this N-layer 10 is connected to the first electrode 1 on the surface 14. Further, the inverse breakdown voltage of P-N junction of this diode N-layer 10 is made several 10s or 100 volts higher than the inverse breakdown voltage in the forward direction barrier junction 9. When the forward direction barrier junction 9 is broke over, it does not give any effect to the forward direction characteristic, since the diode junction 13 is holding the breakdown voltage. The backward current that flows from the 2nd electrode 2 to the 1st electrode 1 does not flow through the resistance 11, the junction 9 which contribute to the forward current and flows through the route of low resistance passing the diode junction 13.
JP10996279A 1979-08-28 1979-08-28 Semiconductor device Pending JPS5633877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10996279A JPS5633877A (en) 1979-08-28 1979-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10996279A JPS5633877A (en) 1979-08-28 1979-08-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5633877A true JPS5633877A (en) 1981-04-04

Family

ID=14523550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10996279A Pending JPS5633877A (en) 1979-08-28 1979-08-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5633877A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365099A (en) * 1988-12-02 1994-11-15 Motorola, Inc. Semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494288A (en) * 1978-01-09 1979-07-25 Mitsubishi Electric Corp 2 terminal reverse conducting thyristor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494288A (en) * 1978-01-09 1979-07-25 Mitsubishi Electric Corp 2 terminal reverse conducting thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365099A (en) * 1988-12-02 1994-11-15 Motorola, Inc. Semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage
US5631187A (en) * 1988-12-02 1997-05-20 Motorola, Inc. Method for making semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage

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