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JPS556890A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS556890A
JPS556890A JP7906579A JP7906579A JPS556890A JP S556890 A JPS556890 A JP S556890A JP 7906579 A JP7906579 A JP 7906579A JP 7906579 A JP7906579 A JP 7906579A JP S556890 A JPS556890 A JP S556890A
Authority
JP
Japan
Prior art keywords
electrode
emitter
ranges
opening holes
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7906579A
Other languages
Japanese (ja)
Inventor
Keizo Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7906579A priority Critical patent/JPS556890A/en
Publication of JPS556890A publication Critical patent/JPS556890A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To easily form minute emitter ranges, by making up several emitter range without positioning the dirlling of an electrode and the extracting of the electrode.
CONSTITUTION: A base range 4 is built up by introducing impurities with conductive forms opposite to a semiconductor substrate 1 to one portion of the substrate 1, and an electrode 5 is covering sticked on the surface. An insulating film 6 is coated on the electrode 5, and a plurality of opening holes 8 are dilled to the electrode and the film. A plurality of emitter ranges 7 are made up by introducing impurities with opposite, conductive forms from a surface of the base range 4 exposed into the opening holes. The opening holes 8 of the electrode 5 are built up in shapes that the diameters are larger than the emitter ranges 7, and emitter electrodes 9, which are arranged on the insulating film 6 while being connected to the emitter ranges 7 in conductive shapes, are formed.
COPYRIGHT: (C)1980,JPO&Japio
JP7906579A 1979-06-25 1979-06-25 Manufacturing method of semiconductor device Pending JPS556890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7906579A JPS556890A (en) 1979-06-25 1979-06-25 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7906579A JPS556890A (en) 1979-06-25 1979-06-25 Manufacturing method of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7342471A Division JPS4839174A (en) 1971-09-22 1971-09-22

Publications (1)

Publication Number Publication Date
JPS556890A true JPS556890A (en) 1980-01-18

Family

ID=13679477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7906579A Pending JPS556890A (en) 1979-06-25 1979-06-25 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS556890A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303071A (en) * 1964-10-27 1967-02-07 Bell Telephone Labor Inc Fabrication of a semiconductive device with closely spaced electrodes
JPS504433A (en) * 1973-05-18 1975-01-17

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303071A (en) * 1964-10-27 1967-02-07 Bell Telephone Labor Inc Fabrication of a semiconductive device with closely spaced electrodes
JPS504433A (en) * 1973-05-18 1975-01-17

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