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JPS5516412A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5516412A
JPS5516412A JP8842678A JP8842678A JPS5516412A JP S5516412 A JPS5516412 A JP S5516412A JP 8842678 A JP8842678 A JP 8842678A JP 8842678 A JP8842678 A JP 8842678A JP S5516412 A JPS5516412 A JP S5516412A
Authority
JP
Japan
Prior art keywords
oxide film
mask
resistant
removal
high pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8842678A
Other languages
Japanese (ja)
Inventor
Ichiro Imaizumi
Masatoshi Kimura
Jiyou Nagata
Masayoshi Yoshimura
Kiyoshi Honma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8842678A priority Critical patent/JPS5516412A/en
Publication of JPS5516412A publication Critical patent/JPS5516412A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce the collector series resistance and to extend the stable operation region of a high pressure-resistant transistor by providing an epitaxial layer with such an impurity concentration that it is high in the low pressure-resistant region and near a collector in the high pressure-resistant region, and that it is continuously decreased with approaching the surface.
CONSTITUTION: A p-type substrate 1 of (100) crystal is etched with a selectively removed surface oxide film 6 as a mask. An opening is provided in the oxide film 6 and a N-type impurity is diffused to form a diffusion layer 2. After the removal of the oxide film 6, an epitaxial layer 41 is provided in which the impurity concentration continuously changes, and a surface oxide film 8 is formed. Thereafter, the predetermined areas of the oxide film 8 are removed and with this oxide film 8 as a mask, the wafer surface is made even by application of etching. After the removal of the oxide film 8, an oxide film 9 is again formed and removed by selective etching to diffuse a P-type impurity whereby an isolation diffusion layer 5 is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP8842678A 1978-07-21 1978-07-21 Semiconductor device Pending JPS5516412A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8842678A JPS5516412A (en) 1978-07-21 1978-07-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8842678A JPS5516412A (en) 1978-07-21 1978-07-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5516412A true JPS5516412A (en) 1980-02-05

Family

ID=13942448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8842678A Pending JPS5516412A (en) 1978-07-21 1978-07-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5516412A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61500080A (en) * 1983-09-13 1986-01-16 ザ　フオツクスボロ　カンパニ− Vortex instrument with small flow path size

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017992A (en) * 1973-06-19 1975-02-25
JPS5028786A (en) * 1973-07-13 1975-03-24
JPS5226873A (en) * 1975-08-25 1977-02-28 Sharp Corp Voice announcing clock

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5017992A (en) * 1973-06-19 1975-02-25
JPS5028786A (en) * 1973-07-13 1975-03-24
JPS5226873A (en) * 1975-08-25 1977-02-28 Sharp Corp Voice announcing clock

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61500080A (en) * 1983-09-13 1986-01-16 ザ　フオツクスボロ　カンパニ− Vortex instrument with small flow path size

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