JPS6430254A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6430254A JPS6430254A JP18683787A JP18683787A JPS6430254A JP S6430254 A JPS6430254 A JP S6430254A JP 18683787 A JP18683787 A JP 18683787A JP 18683787 A JP18683787 A JP 18683787A JP S6430254 A JPS6430254 A JP S6430254A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- layer
- ballast resistance
- guard ring
- resistance layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To make a device smaller in size and to reduce parasitic capacity by a method wherein a guard ring layer and a ballast resistance layer are formed shallow in depth and an oxide film ring is made smaller in width. CONSTITUTION:A silicon oxide film 2 is formed on an n-type semiconductor substrate 1, etching is accomplished by using a photoresist film 3, and then a guard ring layer opening 4, an oxide film ring 5, and a ballast resistance layer opening 7 are provided. The photoresist film 3 is then removed. Making use of the selective implantation effect in the silicon oxide film 2, a p-type impurity, opposite in conductivity to the n-type semiconductor substrate 1, is diffused, which enables the simultaneous formation of a guard ring layer 6 and a ballast resistance layer 8. In this design, the guard ring layer 6 and the ballast resistance layer 8 are formed shallow in depth, and the oxide film ring 5 may be smaller in width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18683787A JPS6430254A (en) | 1987-07-27 | 1987-07-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18683787A JPS6430254A (en) | 1987-07-27 | 1987-07-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430254A true JPS6430254A (en) | 1989-02-01 |
Family
ID=16195495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18683787A Pending JPS6430254A (en) | 1987-07-27 | 1987-07-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430254A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5220898A (en) * | 1991-08-22 | 1993-06-22 | Toyota Jidosha Kabushiki Kaisha | Pressure control system for controlling pressure in fuel tank of engine by controlling discharging of evaporated fuel in fuel tank into canister |
-
1987
- 1987-07-27 JP JP18683787A patent/JPS6430254A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5220898A (en) * | 1991-08-22 | 1993-06-22 | Toyota Jidosha Kabushiki Kaisha | Pressure control system for controlling pressure in fuel tank of engine by controlling discharging of evaporated fuel in fuel tank into canister |
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