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JPS6481354A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6481354A
JPS6481354A JP62240005A JP24000587A JPS6481354A JP S6481354 A JPS6481354 A JP S6481354A JP 62240005 A JP62240005 A JP 62240005A JP 24000587 A JP24000587 A JP 24000587A JP S6481354 A JPS6481354 A JP S6481354A
Authority
JP
Japan
Prior art keywords
type impurity
layer
film
ion implanted
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62240005A
Other languages
Japanese (ja)
Other versions
JPH061815B2 (en
Inventor
Daisaku Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62240005A priority Critical patent/JPH061815B2/en
Publication of JPS6481354A publication Critical patent/JPS6481354A/en
Publication of JPH061815B2 publication Critical patent/JPH061815B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To raise a breakdown strength without reducing the characteristics of an I<2>L by retaining a nitride film only on the base forming section of the I<2>L, and forming a layer having high impurity concentration only on the surface of the base forming section. CONSTITUTION:For example, with an oxide film as a mask arsenic is diffused in a P-type silicon substrate 1 to form an N<+> type impurity layer 2, the oxide film is then removed, an N-type epitaxial layer 3 is grown on its whole surface, and an oxide film 5 is formed on the surface 3. P-type impurity is ion implanted to a predetermined section of the layer 3 through the film 5 to form a first P-type impurity region 6 of the base of an I<2>L. After a nitride film is formed on the whole surface, it is patterned to allow a nitride film 7 to remain only on the first P-type impurity. With a photoresist as a mask P-type impurity is ion implanted through the film 5, second P-type impurity regions 12A, 12B are formed on the layer 2, and P-type impurity is simultaneously ion implanted to the region 6 through the films 7, 5.
JP62240005A 1987-09-24 1987-09-24 Method for manufacturing semiconductor device Expired - Lifetime JPH061815B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62240005A JPH061815B2 (en) 1987-09-24 1987-09-24 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240005A JPH061815B2 (en) 1987-09-24 1987-09-24 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6481354A true JPS6481354A (en) 1989-03-27
JPH061815B2 JPH061815B2 (en) 1994-01-05

Family

ID=17053046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62240005A Expired - Lifetime JPH061815B2 (en) 1987-09-24 1987-09-24 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH061815B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001217317A (en) * 2000-02-07 2001-08-10 Sony Corp Semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001217317A (en) * 2000-02-07 2001-08-10 Sony Corp Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPH061815B2 (en) 1994-01-05

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