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JPS5559763A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5559763A
JPS5559763A JP13162378A JP13162378A JPS5559763A JP S5559763 A JPS5559763 A JP S5559763A JP 13162378 A JP13162378 A JP 13162378A JP 13162378 A JP13162378 A JP 13162378A JP S5559763 A JPS5559763 A JP S5559763A
Authority
JP
Japan
Prior art keywords
film
coated
polysilicon
etched
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13162378A
Other languages
Japanese (ja)
Other versions
JPS6256669B2 (en
Inventor
Keijiro Uehara
Masao Kawamura
Hisayuki Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13162378A priority Critical patent/JPS5559763A/en
Publication of JPS5559763A publication Critical patent/JPS5559763A/en
Publication of JPS6256669B2 publication Critical patent/JPS6256669B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To readily self-align the contact of an emitter with a base of a semiconductor device by combining the lift-off of polysilicon and a selective epitaxial technique.
CONSTITUTION: An epitaxial layer 2 containing an N-type impurity in low concentration is grown on the surface of a silicon substrate wafer 1 containing an N-type impurity in high concentration, and then coated by a SiO2 film 3, a Si3N4 film 4 and a SiO2 film 5 thereon. Then, a photoresist film 6 is coated on an emitter region, and the SiO2 film is etched with the film 6 as a mask. Then, polysilicon film 7 is coated on the substrate thus etched, and a polysilicon film 7 is then coated thereon. After the film 6 is then removed therefrom, the exposed portion of the film 4 is removed by a phosphoric acid. Then, the exposed portion of the film 3 is etched by a fluoric acid to thereby expose an epitaxial film 2. After a selective epitaxial growth is then executed to form a silicon film 8 on the films 2 and 7, boron is diffused therein to thereby form a graft base 10. After the polysilicon film 7 on the base region is then removed, an oxidation film 9 is formed to remove the films 3, 4 on the emitter region and to then form an emitter 11 by means of diffusion.
COPYRIGHT: (C)1980,JPO&Japio
JP13162378A 1978-10-27 1978-10-27 Method of fabricating semiconductor device Granted JPS5559763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13162378A JPS5559763A (en) 1978-10-27 1978-10-27 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13162378A JPS5559763A (en) 1978-10-27 1978-10-27 Method of fabricating semiconductor device

Publications (2)

Publication Number Publication Date
JPS5559763A true JPS5559763A (en) 1980-05-06
JPS6256669B2 JPS6256669B2 (en) 1987-11-26

Family

ID=15062374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13162378A Granted JPS5559763A (en) 1978-10-27 1978-10-27 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5559763A (en)

Also Published As

Publication number Publication date
JPS6256669B2 (en) 1987-11-26

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