JPS5617054A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5617054A JPS5617054A JP9358279A JP9358279A JPS5617054A JP S5617054 A JPS5617054 A JP S5617054A JP 9358279 A JP9358279 A JP 9358279A JP 9358279 A JP9358279 A JP 9358279A JP S5617054 A JPS5617054 A JP S5617054A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- diffused
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To eliminate all mask matching slips and to obtain a transistor having high density and high performance by forming an active base region, a base wall region and an active base region, an emitter region by a self-matching process using a nitride film and an oxide film. CONSTITUTION:An N-type buried region 2 is diffused on a P-type semiconductor substrate 1, an N-type layer 3 is epitaxially grown on the entire surface, and the layer 3 is formed in an island including the region 2 by the P<+>-type region 4 reaching the substrate 1. Then, an oxide film 12 is coated on the entire surface, is etched to remove the base wall on the active base forming region 13, and a nitride film 14 is coated on the entire surface. Thereafter, openings are sequentially perforated at the film 14, a P-type base wall region 5' is diffused in the layer 3, and an active base region 6' making contact therewith is diffused to form an emitter region 7' in the region 6'. Subsequently, the film 14 is removed, an oxide film 12 is newly coated thereon, an opening 11 for mounting a collector electrode is perforated thereat, and an N<+>-type collector electrode pickup region 8' is diffused in the layer 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358279A JPS5617054A (en) | 1979-07-20 | 1979-07-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358279A JPS5617054A (en) | 1979-07-20 | 1979-07-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5617054A true JPS5617054A (en) | 1981-02-18 |
Family
ID=14086260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9358279A Pending JPS5617054A (en) | 1979-07-20 | 1979-07-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617054A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59147455A (en) * | 1983-02-10 | 1984-08-23 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS508489A (en) * | 1973-05-21 | 1975-01-28 |
-
1979
- 1979-07-20 JP JP9358279A patent/JPS5617054A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS508489A (en) * | 1973-05-21 | 1975-01-28 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59147455A (en) * | 1983-02-10 | 1984-08-23 | Matsushita Electric Ind Co Ltd | Manufacturing method of semiconductor device |
| JPH0313746B2 (en) * | 1983-02-10 | 1991-02-25 | Matsushita Electric Ind Co Ltd |
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