JPS55128843A - Semiconductor device and method of fabricating the same - Google Patents
Semiconductor device and method of fabricating the sameInfo
- Publication number
- JPS55128843A JPS55128843A JP3723679A JP3723679A JPS55128843A JP S55128843 A JPS55128843 A JP S55128843A JP 3723679 A JP3723679 A JP 3723679A JP 3723679 A JP3723679 A JP 3723679A JP S55128843 A JPS55128843 A JP S55128843A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- layer
- type
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To improve the density of a semiconductor device by forming an emitter pickup electrode of polycrystalline silicon and a base pickup electrode of aluminum in a bipolar IC, and superimposing the electrodes in an architecture to set the interval between the electrodes at zero.
CONSTITUTION: An n+-type buried collector region 2 is diffused in a p-type silicon substrate 1, an n-type collector layer 5 is epitaxially grown on the entire surface, and the layer 5 is surrounded with an isolation oxide film 4 to form the layer 5 on the region 2 in an island state. A p-type region 6 is then diffused in the layer 5 becoming the island state, a polycrystalline silicon film 10 is accumulated on the layer 5 including the region 6, a Si3N4 film 11 is coated only on the emitter and collector regions, heat treated, and converted in the exposed film 10 into A SiO2 film 8. Thereafter, the film 11 is removed, with the film 8 as a mask As ion is implanted thereon to form an n-type emitter region 7 in the region 6 and an n-type contact region 5' in the layer 5, an opening is perforated at the film 8, and an aluminum wire 9" is coated from the region 6 over the SiO2 film 8' on the region 7.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3723679A JPS55128843A (en) | 1979-03-28 | 1979-03-28 | Semiconductor device and method of fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3723679A JPS55128843A (en) | 1979-03-28 | 1979-03-28 | Semiconductor device and method of fabricating the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55128843A true JPS55128843A (en) | 1980-10-06 |
Family
ID=12491965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3723679A Pending JPS55128843A (en) | 1979-03-28 | 1979-03-28 | Semiconductor device and method of fabricating the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55128843A (en) |
-
1979
- 1979-03-28 JP JP3723679A patent/JPS55128843A/en active Pending
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