[go: up one dir, main page]

JPS57199235A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS57199235A
JPS57199235A JP8522881A JP8522881A JPS57199235A JP S57199235 A JPS57199235 A JP S57199235A JP 8522881 A JP8522881 A JP 8522881A JP 8522881 A JP8522881 A JP 8522881A JP S57199235 A JPS57199235 A JP S57199235A
Authority
JP
Japan
Prior art keywords
layer
base
collector
oxide film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8522881A
Other languages
Japanese (ja)
Other versions
JPS6251494B2 (en
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8522881A priority Critical patent/JPS57199235A/en
Publication of JPS57199235A publication Critical patent/JPS57199235A/en
Publication of JPS6251494B2 publication Critical patent/JPS6251494B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To enable high-frequency operation, by a method wherein a silicon oxide film is formed on epitaxial layer between base region and collector electrode taking layer. CONSTITUTION:Collector guried layer 2 is formed on P type Si substrate 1, and then N-type epitaxial layer 3 is grown. The layer 3 is etched using a photo resist film 6 having openings at isolation region and between base and collector electrodes, thereby a photo resist film 23 is provided and the layer 3 is further etched. An isolation oxide film 8 and an oxide film 24 are formed by oxidation after forming channel preventing layer 7 by boron implantation and removing resist film 6 and 23. Base layer 11a, emitter layer 12, base electrode 16, collector electrode 15 and emitter electrode 17 are formed thereby a transistor is constituted.
JP8522881A 1981-06-01 1981-06-01 Semiconductor integrated circuit device and manufacture thereof Granted JPS57199235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8522881A JPS57199235A (en) 1981-06-01 1981-06-01 Semiconductor integrated circuit device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8522881A JPS57199235A (en) 1981-06-01 1981-06-01 Semiconductor integrated circuit device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57199235A true JPS57199235A (en) 1982-12-07
JPS6251494B2 JPS6251494B2 (en) 1987-10-30

Family

ID=13852703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8522881A Granted JPS57199235A (en) 1981-06-01 1981-06-01 Semiconductor integrated circuit device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57199235A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158889A (en) * 1978-06-05 1979-12-15 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5661140A (en) * 1979-10-25 1981-05-26 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158889A (en) * 1978-06-05 1979-12-15 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5661140A (en) * 1979-10-25 1981-05-26 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6251494B2 (en) 1987-10-30

Similar Documents

Publication Publication Date Title
JPS57139965A (en) Manufacture of semiconductor device
JPS5683063A (en) Manufacture of semiconductor device
JPS57199235A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5617071A (en) Semiconductor device
JPS5541737A (en) Preparation of semiconductor device
JPS57134956A (en) Manufacture of semiconductor integrated circuit
JPS572519A (en) Manufacture of semiconductor device
JPS55153344A (en) Manufacture of semiconductor device
JPS57155772A (en) Manufacture of semiconductor device
JPS55108767A (en) Semiconductor device and manufacture of the same
JPS55111144A (en) Manufacturing method of semiconductor device
JPS6482668A (en) Manufacture of bipolar transistor
JPS5640256A (en) Manufacture of semiconductor device
JPS55132053A (en) Manufacture of semiconductor device
JPS5541787A (en) Semiconductor device
JPS577943A (en) Manufacture of semiconductor integrated circuit device
JPS5617054A (en) Manufacture of semiconductor device
JPS5612779A (en) Zener diode
JPS5522876A (en) Manufacturing method of semiconductor integrated circuit device with lateral transistor
JPS5575234A (en) Semiconductor device
KR930001288B1 (en) Manufacturing method of complementary vertical pnp transistor
JPS5748269A (en) Semiconductor device
JPS5591155A (en) Semiconductor integrated circuit device
JPS5749249A (en) Semiconductor integrated circuit device
JPS55148463A (en) Manufacture of semiconductor device