JPS57143841A - Insulation separating composition - Google Patents
Insulation separating compositionInfo
- Publication number
- JPS57143841A JPS57143841A JP56029080A JP2908081A JPS57143841A JP S57143841 A JPS57143841 A JP S57143841A JP 56029080 A JP56029080 A JP 56029080A JP 2908081 A JP2908081 A JP 2908081A JP S57143841 A JPS57143841 A JP S57143841A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- region
- poly
- boron
- type region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009413 insulation Methods 0.000 title abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To reduce the design margin between elements by a method wherein a P-N junction sideward expansion of which is limited is formed in an insulation region on an integrated circuit by using polycrystal silicon which has different diffusion speed from single crystal silicon. CONSTITUTION:SiO2 film is formed on a whole surface of an epitaxial layer and only poly-silicon portion is exposed by etching. The PN separation is cimpleted by completion of a P type region sorrounding an active region 5 of elements in combination with a P type region of a substrate by forming a P type region by diffusing boron. At that time the diffusion coefficient of the boron in the poly-silicon is sufficiently larger than that in single crystal silicon and the boron is diffused in a short time and approximately into the poly-silicon only, so that an integrated circuit with a small separation region can be obtained by limiting sideward expansion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56029080A JPS57143841A (en) | 1981-02-27 | 1981-02-27 | Insulation separating composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56029080A JPS57143841A (en) | 1981-02-27 | 1981-02-27 | Insulation separating composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57143841A true JPS57143841A (en) | 1982-09-06 |
Family
ID=12266356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56029080A Pending JPS57143841A (en) | 1981-02-27 | 1981-02-27 | Insulation separating composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143841A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745800A (en) * | 1993-07-27 | 1995-02-14 | Nec Corp | Soi substrate |
| JP2004511106A (en) * | 2000-10-03 | 2004-04-08 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Semiconductor device and method of manufacturing the same |
-
1981
- 1981-02-27 JP JP56029080A patent/JPS57143841A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745800A (en) * | 1993-07-27 | 1995-02-14 | Nec Corp | Soi substrate |
| JP2004511106A (en) * | 2000-10-03 | 2004-04-08 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Semiconductor device and method of manufacturing the same |
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