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JPS55154582A - Gas plasma etching method - Google Patents

Gas plasma etching method

Info

Publication number
JPS55154582A
JPS55154582A JP6313179A JP6313179A JPS55154582A JP S55154582 A JPS55154582 A JP S55154582A JP 6313179 A JP6313179 A JP 6313179A JP 6313179 A JP6313179 A JP 6313179A JP S55154582 A JPS55154582 A JP S55154582A
Authority
JP
Japan
Prior art keywords
processed
etching speed
substrate
layer
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6313179A
Other languages
Japanese (ja)
Other versions
JPS627268B2 (en
Inventor
Hiroyasu Toyoda
Hideaki Itakura
Hiroyoshi Komiya
Mineto Tobinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP6313179A priority Critical patent/JPS55154582A/en
Publication of JPS55154582A publication Critical patent/JPS55154582A/en
Publication of JPS627268B2 publication Critical patent/JPS627268B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To improve the ununiformity of etching speed in the material to be processed, by forming the electrode surface equipped with the material to be processed and groundwork layer by the same material, on occasion of processing multilayer construction material to be processed having the groundwork layer and layer to be etched.
CONSTITUTION: The surface materials 4, 5 of the flat board upper and lower electrodes 2, 3 equipped in the reaction vessel 1 of parallel flat board type gas plasma etching apparatus, is made of polycrystal silicon and the material to be processed 8 having the SiO2 coating 7 which is selectively formed on the surface of the Si substrate 6, is placed on the material 5 of the lower electrode 3 and CHF3 gas is introduced at a constant flowing volume through the gas introducing pipe 10 after evacuating the vessel 1 by the vacuum pump 9. Hereby, each part of the substrate 6 and the coating 7 on the Si substrate exposed on the surface of the material 8, is etched by the different etching speed and value of the etching speed ratio R(SiO2/Si) is grown very large and also, etching speed distribution in a sheet of the material to be processed, is made uniform.
COPYRIGHT: (C)1980,JPO&Japio
JP6313179A 1979-05-21 1979-05-21 Gas plasma etching method Granted JPS55154582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6313179A JPS55154582A (en) 1979-05-21 1979-05-21 Gas plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6313179A JPS55154582A (en) 1979-05-21 1979-05-21 Gas plasma etching method

Publications (2)

Publication Number Publication Date
JPS55154582A true JPS55154582A (en) 1980-12-02
JPS627268B2 JPS627268B2 (en) 1987-02-16

Family

ID=13220401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6313179A Granted JPS55154582A (en) 1979-05-21 1979-05-21 Gas plasma etching method

Country Status (1)

Country Link
JP (1) JPS55154582A (en)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100683A (en) * 1981-12-12 1983-06-15 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method
JPS58209111A (en) * 1982-05-31 1983-12-06 Toshiba Corp Plasma generator
JPS59195832A (en) * 1983-04-20 1984-11-07 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Etching device
JPS60201632A (en) * 1984-03-27 1985-10-12 Anelva Corp Dry etching apparatus
JPS6285430A (en) * 1985-07-25 1987-04-18 テキサス　インスツルメンツ　インコ−ポレイテツド Plasma treatment and apparatus for the same
JPS6428386A (en) * 1987-07-24 1989-01-30 Nippon Telegraph & Telephone Plasma etching device
JPH0473936A (en) * 1990-07-13 1992-03-09 Sumitomo Metal Ind Ltd Plasma etching apparatus
JPH0629256A (en) * 1992-01-24 1994-02-04 Applied Materials Inc High-selectivity oxide etching process of integrated circuit structure
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
US5990017A (en) * 1991-06-27 1999-11-23 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6083412A (en) * 1993-10-15 2000-07-04 Applied Materials, Inc. Plasma etch apparatus with heated scavenging surfaces
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6251792B1 (en) 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US6361644B1 (en) 1995-08-30 2002-03-26 Applied Materials, Inc. Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6444137B1 (en) 1990-07-31 2002-09-03 Applied Materials, Inc. Method for processing substrates using gaseous silicon scavenger
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0121230B2 (en) * 1981-12-12 1989-04-20 Nippon Telegraph & Telephone
JPS58100683A (en) * 1981-12-12 1983-06-15 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method
JPS58209111A (en) * 1982-05-31 1983-12-06 Toshiba Corp Plasma generator
JPS59195832A (en) * 1983-04-20 1984-11-07 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Etching device
JPS60201632A (en) * 1984-03-27 1985-10-12 Anelva Corp Dry etching apparatus
JPH0523053B2 (en) * 1984-03-27 1993-03-31 Anelva Corp
JPS6285430A (en) * 1985-07-25 1987-04-18 テキサス　インスツルメンツ　インコ−ポレイテツド Plasma treatment and apparatus for the same
JPS6428386A (en) * 1987-07-24 1989-01-30 Nippon Telegraph & Telephone Plasma etching device
JPH089787B2 (en) * 1987-07-24 1996-01-31 日本電信電話株式会社 Plasma etching device
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
JPH0473936A (en) * 1990-07-13 1992-03-09 Sumitomo Metal Ind Ltd Plasma etching apparatus
US6444137B1 (en) 1990-07-31 2002-09-03 Applied Materials, Inc. Method for processing substrates using gaseous silicon scavenger
US6251792B1 (en) 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6063233A (en) * 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6444085B1 (en) 1991-06-27 2002-09-03 Applied Materials Inc. Inductively coupled RF plasma reactor having an antenna adjacent a window electrode
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5990017A (en) * 1991-06-27 1999-11-23 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6454898B1 (en) 1991-06-27 2002-09-24 Applied Materials, Inc. Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6440866B1 (en) 1991-06-27 2002-08-27 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
JPH0629256A (en) * 1992-01-24 1994-02-04 Applied Materials Inc High-selectivity oxide etching process of integrated circuit structure
US6623596B1 (en) 1992-12-01 2003-09-23 Applied Materials, Inc Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6083412A (en) * 1993-10-15 2000-07-04 Applied Materials, Inc. Plasma etch apparatus with heated scavenging surfaces
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6361644B1 (en) 1995-08-30 2002-03-26 Applied Materials, Inc. Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode
US6444084B1 (en) 1996-02-02 2002-09-03 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US6524432B1 (en) 1996-02-02 2003-02-25 Applied Materials Inc. Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6365063B2 (en) 1996-05-13 2002-04-02 Applied Materials, Inc. Plasma reactor having a dual mode RF power application
US6218312B1 (en) 1996-05-13 2001-04-17 Applied Materials Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma

Also Published As

Publication number Publication date
JPS627268B2 (en) 1987-02-16

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