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JPS54101273A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54101273A
JPS54101273A JP796578A JP796578A JPS54101273A JP S54101273 A JPS54101273 A JP S54101273A JP 796578 A JP796578 A JP 796578A JP 796578 A JP796578 A JP 796578A JP S54101273 A JPS54101273 A JP S54101273A
Authority
JP
Japan
Prior art keywords
perforated layer
manufacture
semiconductor device
heavy metal
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP796578A
Other languages
Japanese (ja)
Other versions
JPS6225252B2 (en
Inventor
Mototaka Kamoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP796578A priority Critical patent/JPS54101273A/en
Publication of JPS54101273A publication Critical patent/JPS54101273A/en
Publication of JPS6225252B2 publication Critical patent/JPS6225252B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To form perforated layer less in heavy metal impurity with a simple unit, in the manufacture of semiconductor device.
CONSTITUTION: Suitable high purity gas such as CF4 is brught to plasma condition, and electric field is applied to the semiconductor in the radical gas deviated from the plasma, forming the perforated layer. As a result, different from the case treated in concentrated hydrofluoric acid conventionally, the degree of contamination of heavy metal in the perforated layer can extermely be lowered and the silicon dioxide photo resist which has not been used can be used as a mask.
COPYRIGHT: (C)1979,JPO&Japio
JP796578A 1978-01-26 1978-01-26 Manufacture for semiconductor device Granted JPS54101273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP796578A JPS54101273A (en) 1978-01-26 1978-01-26 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP796578A JPS54101273A (en) 1978-01-26 1978-01-26 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS54101273A true JPS54101273A (en) 1979-08-09
JPS6225252B2 JPS6225252B2 (en) 1987-06-02

Family

ID=11680172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP796578A Granted JPS54101273A (en) 1978-01-26 1978-01-26 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54101273A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511136A (en) * 2004-08-17 2008-04-10 セシリア ワイ マック Method for depositing porous film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353360U (en) * 1989-09-30 1991-05-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008511136A (en) * 2004-08-17 2008-04-10 セシリア ワイ マック Method for depositing porous film

Also Published As

Publication number Publication date
JPS6225252B2 (en) 1987-06-02

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