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JPS5618426A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5618426A
JPS5618426A JP9328579A JP9328579A JPS5618426A JP S5618426 A JPS5618426 A JP S5618426A JP 9328579 A JP9328579 A JP 9328579A JP 9328579 A JP9328579 A JP 9328579A JP S5618426 A JPS5618426 A JP S5618426A
Authority
JP
Japan
Prior art keywords
groove
layer
gas
silicon
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9328579A
Other languages
Japanese (ja)
Inventor
Kazuo Tokitomo
Ryoji Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9328579A priority Critical patent/JPS5618426A/en
Priority to EP80302457A priority patent/EP0023146B1/en
Priority to IE150580A priority patent/IE52971B1/en
Priority to DE8080302457T priority patent/DE3072040D1/en
Publication of JPS5618426A publication Critical patent/JPS5618426A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To keep the flatness, by providing a coating layer flatly on polycrystalline silicon which is filled in an isolating V groove; and performing plasma etching with a gas, wherein mixing ratio of gas of fluorine series and oxygen gas is adjusted and etching speeds are equal. CONSTITUTION:The V groove is formed in an epitaxial layer 2 provided on a silicon substrate 1 by using an SiO2 layer 3 and an Si3N4 layer 4. An SiO2 layer 3' is formed on the walls of the groove, and the polycrsystalline silicon 5 is filled in the groove. A resinous coating material layer 6 comprising polyimide resin and the like is provided on said silicon 5, and the surface of the layer 6 is made approximately flat. Plasma ethching is performed by a gas, wherein the mixing ratio of C2 F6 gas and O2 is adjusted and the etching speeds of the layers 5 and 6 become equal; thereby the polycrystalline silicon outside the groove is removed. In this method, the surface of the V groove is flattened by dry etching, and the intrusion of alkali metals and the like can be prevented.
JP9328579A 1979-07-23 1979-07-24 Manufacture of semiconductor device Pending JPS5618426A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9328579A JPS5618426A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor device
EP80302457A EP0023146B1 (en) 1979-07-23 1980-07-21 Method of manufacturing a semiconductor device wherein first and second layers are formed
IE150580A IE52971B1 (en) 1979-07-23 1980-07-21 Method of manufacturing a semiconductor device wherein first and second layers are formed
DE8080302457T DE3072040D1 (en) 1979-07-23 1980-07-21 Method of manufacturing a semiconductor device wherein first and second layers are formed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9328579A JPS5618426A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5618426A true JPS5618426A (en) 1981-02-21

Family

ID=14078135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9328579A Pending JPS5618426A (en) 1979-07-23 1979-07-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5618426A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138834A (en) * 1982-02-10 1983-08-17 Nippon Sagiyousen Kyokai Walking type dredger
JPS58164877U (en) * 1982-04-30 1983-11-02 三菱重工業株式会社 traveling device
JPS59179463A (en) * 1983-03-30 1984-10-12 Agency Of Ind Science & Technol Four-leg walking machine
US4596071A (en) * 1983-09-05 1986-06-24 Oki Electric Industry Co., Ltd. Method of making semiconductor devices having dielectric isolation regions
JPS624581A (en) * 1985-06-29 1987-01-10 工業技術院長 Mobile type manipulator
JPS62143429A (en) * 1985-12-17 1987-06-26 Fujitsu Ltd Manufacturing method of semiconductor device
US8011487B2 (en) 2006-04-18 2011-09-06 Kabushiki Kaisha F.C.C. Clutch outer member for multi-plate clutch

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS52131471A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Surface treatment of substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS52131471A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Surface treatment of substrate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138834A (en) * 1982-02-10 1983-08-17 Nippon Sagiyousen Kyokai Walking type dredger
JPS58164877U (en) * 1982-04-30 1983-11-02 三菱重工業株式会社 traveling device
JPS59179463A (en) * 1983-03-30 1984-10-12 Agency Of Ind Science & Technol Four-leg walking machine
JPH0234753B2 (en) * 1983-03-30 1990-08-06 Kogyo Gijutsuin
US4596071A (en) * 1983-09-05 1986-06-24 Oki Electric Industry Co., Ltd. Method of making semiconductor devices having dielectric isolation regions
JPS624581A (en) * 1985-06-29 1987-01-10 工業技術院長 Mobile type manipulator
JPH0567393B2 (en) * 1985-06-29 1993-09-24 Kogyo Gijutsuin
JPS62143429A (en) * 1985-12-17 1987-06-26 Fujitsu Ltd Manufacturing method of semiconductor device
US8011487B2 (en) 2006-04-18 2011-09-06 Kabushiki Kaisha F.C.C. Clutch outer member for multi-plate clutch

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