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JP4553453B2 - 不揮発性強誘電体メモリ装置 - Google Patents

不揮発性強誘電体メモリ装置 Download PDF

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Publication number
JP4553453B2
JP4553453B2 JP2000212943A JP2000212943A JP4553453B2 JP 4553453 B2 JP4553453 B2 JP 4553453B2 JP 2000212943 A JP2000212943 A JP 2000212943A JP 2000212943 A JP2000212943 A JP 2000212943A JP 4553453 B2 JP4553453 B2 JP 4553453B2
Authority
JP
Japan
Prior art keywords
transistor
pull
sensing amplifier
cell array
amplifier unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000212943A
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English (en)
Japanese (ja)
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JP2001057073A (ja
Inventor
煕 福 姜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of JP2001057073A publication Critical patent/JP2001057073A/ja
Application granted granted Critical
Publication of JP4553453B2 publication Critical patent/JP4553453B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2000212943A 1999-07-21 2000-07-13 不揮発性強誘電体メモリ装置 Expired - Fee Related JP4553453B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019990029647A KR100335119B1 (ko) 1999-07-21 1999-07-21 불휘발성 강유전체 메모리 장치
KR29647/1999 1999-07-21

Publications (2)

Publication Number Publication Date
JP2001057073A JP2001057073A (ja) 2001-02-27
JP4553453B2 true JP4553453B2 (ja) 2010-09-29

Family

ID=19603493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000212943A Expired - Fee Related JP4553453B2 (ja) 1999-07-21 2000-07-13 不揮発性強誘電体メモリ装置

Country Status (3)

Country Link
JP (1) JP4553453B2 (de)
KR (1) KR100335119B1 (de)
DE (1) DE10035108B4 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100499631B1 (ko) * 2002-11-08 2005-07-05 주식회사 하이닉스반도체 강유전체 메모리 장치
KR100709455B1 (ko) * 2006-02-17 2007-04-18 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그 형성 방법
KR100709436B1 (ko) 2006-02-17 2007-04-18 주식회사 하이닉스반도체 멀티 칩 패키지 장치 및 그 형성 방법
US7842990B2 (en) 2006-02-17 2010-11-30 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device including trench capacitor
JP2007257786A (ja) * 2006-03-24 2007-10-04 Toshiba Corp 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2885415B2 (ja) * 1989-03-17 1999-04-26 株式会社東芝 ダイナミック型半導体記憶装置
US5228106A (en) * 1991-05-30 1993-07-13 Integrated Device Technology, Inc. Track-and-regenerate amplifiers and memories using such amplifiers
US5367213A (en) * 1993-06-09 1994-11-22 Micron Semiconductor, Inc. P-channel sense amplifier pull-up circuit incorporating a voltage comparator for use in DRAM memories having non-bootstrapped word lines
US5668765A (en) * 1996-06-06 1997-09-16 Philips Electronics North America Corporation Charge transfer sense amplifier
KR100261174B1 (ko) * 1997-12-12 2000-07-01 김영환 비휘발성 강유전체 메모리 및 그의 제조 방법

Also Published As

Publication number Publication date
JP2001057073A (ja) 2001-02-27
DE10035108B4 (de) 2006-08-17
DE10035108A1 (de) 2001-02-08
KR20010010654A (ko) 2001-02-15
KR100335119B1 (ko) 2002-05-04

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