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FR3079532B1 - Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain - Google Patents

Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain Download PDF

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Publication number
FR3079532B1
FR3079532B1 FR1800254A FR1800254A FR3079532B1 FR 3079532 B1 FR3079532 B1 FR 3079532B1 FR 1800254 A FR1800254 A FR 1800254A FR 1800254 A FR1800254 A FR 1800254A FR 3079532 B1 FR3079532 B1 FR 3079532B1
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France
Prior art keywords
monocrystalline layer
ain material
ain
growth
manufacturing
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FR1800254A
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English (en)
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FR3079532A1 (fr
Inventor
Bruno Ghyselen
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Soitec SA
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Soitec SA
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Publication date
Priority to FR1800254A priority Critical patent/FR3079532B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to SG11202009411SA priority patent/SG11202009411SA/en
Priority to EP19759725.5A priority patent/EP3775333A2/fr
Priority to PCT/IB2019/000205 priority patent/WO2019186266A2/fr
Priority to CN201980021416.2A priority patent/CN111902571A/zh
Priority to US17/041,371 priority patent/US12071706B2/en
Priority to KR1020207030232A priority patent/KR102640296B1/ko
Priority to JP2020549815A priority patent/JP7451846B2/ja
Publication of FR3079532A1 publication Critical patent/FR3079532A1/fr
Application granted granted Critical
Publication of FR3079532B1 publication Critical patent/FR3079532B1/fr
Priority to US18/787,009 priority patent/US20240384432A1/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Procédé de fabrication d'une couche monocristalline de matériau AIN comprenant le transfert d'une couche germe monocristalline de matériau SiC-6H sur un substrat support de matériau silicium suivi d'une croissance par épitaxie de la couche monocristalline de matériau AIN.
FR1800254A 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain Active FR3079532B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1800254A FR3079532B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain
EP19759725.5A EP3775333A2 (fr) 2018-03-28 2019-03-26 Procédé de fabrication d'une couche monocristalline de matériau ain et substrat pour croissance par épitaxie d'une couche monocristalline de matériau ain
PCT/IB2019/000205 WO2019186266A2 (fr) 2018-03-28 2019-03-26 Procédé de fabrication d'une couche monocristalline de matériau ain et substrat pour croissance par épitaxie d'une couche monocristalline de matériau ain
CN201980021416.2A CN111902571A (zh) 2018-03-28 2019-03-26 AlN材料单晶层的制造方法和外延生长AlN材料单晶膜的衬底
SG11202009411SA SG11202009411SA (en) 2018-03-28 2019-03-26 Method for producing a single-crystal film of aln material and substrate for the epitaxial growth of a single-crystal film of aln material
US17/041,371 US12071706B2 (en) 2018-03-28 2019-03-26 Process for producing a monoocrystalline layer of AlN material by transferring a SiC-6H seed to a Si carrier substrate and epitaxially growing the monocrystalline layer of AlN material and substrate for the epitaxial growth of a monocrystalline layer of AlN material
KR1020207030232A KR102640296B1 (ko) 2018-03-28 2019-03-26 AlN 재질의 단결정 층을 제조하는 방법 및 AlN 재질의 단결정 층의 에피택셜 성장을 위한 기판
JP2020549815A JP7451846B2 (ja) 2018-03-28 2019-03-26 ＡｌＮ材料の単結晶膜を生成するための方法、及びＡｌＮ材料の単結晶膜をエピタキシャル成長させるための基板
US18/787,009 US20240384432A1 (en) 2018-03-28 2024-07-29 Structure comprising monocrystalline layers of aln material on a substrate and substrate for the epitaxial growth of monocrystalline layers of aln material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1800254A FR3079532B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain
FR1800254 2018-03-28

Publications (2)

Publication Number Publication Date
FR3079532A1 FR3079532A1 (fr) 2019-10-04
FR3079532B1 true FR3079532B1 (fr) 2022-03-25

Family

ID=63834053

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FR1800254A Active FR3079532B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain

Country Status (8)

Country Link
US (2) US12071706B2 (fr)
EP (1) EP3775333A2 (fr)
JP (1) JP7451846B2 (fr)
KR (1) KR102640296B1 (fr)
CN (1) CN111902571A (fr)
FR (1) FR3079532B1 (fr)
SG (1) SG11202009411SA (fr)
WO (1) WO2019186266A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021210390A1 (fr) * 2020-04-14 2021-10-21 学校法人関西学院 Procédé de production d'un substrat semi-conducteur, substrat semi-conducteur et procédé de prévention de l'apparition de fissures dans une couche de croissance
CN115443353A (zh) * 2020-04-14 2022-12-06 学校法人关西学院 氮化铝衬底的制造方法、氮化铝衬底和抑制在氮化铝层中产生裂纹的方法
FR3149424A1 (fr) * 2023-06-05 2024-12-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication d’un dispositif à base de carbure de silicium (SiC) cristallin

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JP3352340B2 (ja) 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
CA2220600C (fr) * 1996-11-15 2002-02-12 Canon Kabushiki Kaisha Methode de fabrication d'articles a semi-conducteur
ATE261612T1 (de) * 1996-12-18 2004-03-15 Canon Kk Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht
FR2767604B1 (fr) 1997-08-19 2000-12-01 Commissariat Energie Atomique Procede de traitement pour le collage moleculaire et le decollage de deux structures
JP2001209981A (ja) 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US8507361B2 (en) * 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
EP1482549B1 (fr) * 2003-05-27 2011-03-30 S.O.I. Tec Silicon on Insulator Technologies S.A. Procédé pour la fabrication d'une microstructure heteroepitaxiale
FR2835096B1 (fr) * 2002-01-22 2005-02-18 Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin
FR2817394B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US7407869B2 (en) * 2000-11-27 2008-08-05 S.O.I.Tec Silicon On Insulator Technologies Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
FR2835097B1 (fr) * 2002-01-23 2005-10-14 Procede optimise de report d'une couche mince de carbure de silicium sur un substrat d'accueil
FR2857982B1 (fr) 2003-07-24 2007-05-18 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US7476594B2 (en) 2005-03-30 2009-01-13 Cree, Inc. Methods of fabricating silicon nitride regions in silicon carbide and resulting structures
US20070069225A1 (en) * 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc III-V light emitting device
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US9564320B2 (en) * 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
FR2963848B1 (fr) * 2010-08-11 2012-08-31 Soitec Silicon On Insulator Procede de collage par adhesion moleculaire a basse pression
EP3239100A4 (fr) * 2014-12-22 2018-07-11 Shin-Etsu Chemical Co., Ltd. Substrat composite, procédé de formation d'un film de nanocarbone et film de nanocarbone
FR3041364B1 (fr) * 2015-09-18 2017-10-06 Soitec Silicon On Insulator Procede de transfert de paves monocristallins
US10283463B2 (en) * 2017-04-11 2019-05-07 International Business Machines Corporation Terahertz detector comprised of P-N junction diode

Also Published As

Publication number Publication date
JP7451846B2 (ja) 2024-03-19
FR3079532A1 (fr) 2019-10-04
KR102640296B1 (ko) 2024-02-22
US20240384432A1 (en) 2024-11-21
US12071706B2 (en) 2024-08-27
EP3775333A2 (fr) 2021-02-17
WO2019186266A2 (fr) 2019-10-03
US20210032772A1 (en) 2021-02-04
CN111902571A (zh) 2020-11-06
JP2021518324A (ja) 2021-08-02
KR20200138284A (ko) 2020-12-09
WO2019186266A3 (fr) 2019-11-21
SG11202009411SA (en) 2020-10-29

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