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FR2857982B1 - Procede de fabrication d'une couche epitaxiee - Google Patents

Procede de fabrication d'une couche epitaxiee

Info

Publication number
FR2857982B1
FR2857982B1 FR0309076A FR0309076A FR2857982B1 FR 2857982 B1 FR2857982 B1 FR 2857982B1 FR 0309076 A FR0309076 A FR 0309076A FR 0309076 A FR0309076 A FR 0309076A FR 2857982 B1 FR2857982 B1 FR 2857982B1
Authority
FR
France
Prior art keywords
layer
substrate
producing
thin support
rest
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0309076A
Other languages
English (en)
Other versions
FR2857982A1 (fr
Inventor
Bruce Faure
Cioccio Lea Di
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0309076A priority Critical patent/FR2857982B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to KR1020067001684A priority patent/KR100798976B1/ko
Priority to JP2006520718A priority patent/JP5031364B2/ja
Priority to PCT/EP2004/007577 priority patent/WO2005014895A1/fr
Priority to EP04763149A priority patent/EP1664396B1/fr
Priority to AT04763149T priority patent/ATE524577T1/de
Priority to CNB2004800213873A priority patent/CN100415947C/zh
Priority to TW093122170A priority patent/TWI278540B/zh
Publication of FR2857982A1 publication Critical patent/FR2857982A1/fr
Priority to US11/283,847 priority patent/US7538010B2/en
Application granted granted Critical
Publication of FR2857982B1 publication Critical patent/FR2857982B1/fr
Priority to US12/469,285 priority patent/US8093138B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR0309076A 2003-07-24 2003-07-24 Procede de fabrication d'une couche epitaxiee Expired - Lifetime FR2857982B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR0309076A FR2857982B1 (fr) 2003-07-24 2003-07-24 Procede de fabrication d'une couche epitaxiee
JP2006520718A JP5031364B2 (ja) 2003-07-24 2004-07-07 エピタキシャル成長層の形成方法
PCT/EP2004/007577 WO2005014895A1 (fr) 2003-07-24 2004-07-07 Procede de fabrication d'une couche de croissance epitaxiale
EP04763149A EP1664396B1 (fr) 2003-07-24 2004-07-07 Procede de fabrication d'une couche de croissance epitaxiale
AT04763149T ATE524577T1 (de) 2003-07-24 2004-07-07 Verfahren zur herstellung einer epitaktisch aufgewachsenen schicht
CNB2004800213873A CN100415947C (zh) 2003-07-24 2004-07-07 制造外延生长层的方法
KR1020067001684A KR100798976B1 (ko) 2003-07-24 2004-07-07 에피택셜 성장층의 제조방법
TW093122170A TWI278540B (en) 2003-07-24 2004-07-23 A method of fabricating an epitaxially grown layer
US11/283,847 US7538010B2 (en) 2003-07-24 2005-11-22 Method of fabricating an epitaxially grown layer
US12/469,285 US8093138B2 (en) 2003-07-24 2009-05-20 Method of fabricating an epitaxially grown layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0309076A FR2857982B1 (fr) 2003-07-24 2003-07-24 Procede de fabrication d'une couche epitaxiee

Publications (2)

Publication Number Publication Date
FR2857982A1 FR2857982A1 (fr) 2005-01-28
FR2857982B1 true FR2857982B1 (fr) 2007-05-18

Family

ID=33561068

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0309076A Expired - Lifetime FR2857982B1 (fr) 2003-07-24 2003-07-24 Procede de fabrication d'une couche epitaxiee

Country Status (8)

Country Link
EP (1) EP1664396B1 (fr)
JP (1) JP5031364B2 (fr)
KR (1) KR100798976B1 (fr)
CN (1) CN100415947C (fr)
AT (1) ATE524577T1 (fr)
FR (1) FR2857982B1 (fr)
TW (1) TWI278540B (fr)
WO (1) WO2005014895A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916929B2 (en) 2004-06-10 2014-12-23 Power Integrations, Inc. MOSFET having a JFET embedded as a body diode
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
EP4128329B1 (fr) * 2020-03-27 2024-04-03 Soitec Procede de fabrication d'une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic
EP4128328B1 (fr) * 2020-03-27 2024-04-03 Soitec Procede de fabrication d'une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2857983B1 (fr) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US7538010B2 (en) 2003-07-24 2009-05-26 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating an epitaxially grown layer
US8101498B2 (en) * 2005-04-21 2012-01-24 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
FR2888402B1 (fr) * 2005-07-06 2007-12-21 Commissariat Energie Atomique Procede d'assemblage de substrats par depot d'une couche mince de collage d'oxyde ou de nitrure et structure ainsi assemblee
FR2888663B1 (fr) * 2005-07-13 2008-04-18 Soitec Silicon On Insulator Procede de diminution de la rugosite d'une couche epaisse d'isolant
FR2896619B1 (fr) * 2006-01-23 2008-05-23 Soitec Silicon On Insulator Procede de fabrication d'un substrat composite a proprietes electriques ameliorees
FR2896618B1 (fr) * 2006-01-23 2008-05-23 Soitec Silicon On Insulator Procede de fabrication d'un substrat composite
EP1835533B1 (fr) 2006-03-14 2020-06-03 Soitec Méthode de fabrication de plaquettes composites et procédé de recyclage d'un substrat donneur usagé
FR2899378B1 (fr) * 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2917232B1 (fr) 2007-06-06 2009-10-09 Soitec Silicon On Insulator Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion.
FR2926674B1 (fr) * 2008-01-21 2010-03-26 Soitec Silicon On Insulator Procede de fabrication d'une structure composite avec couche d'oxyde de collage stable
FR2926672B1 (fr) 2008-01-21 2010-03-26 Soitec Silicon On Insulator Procede de fabrication de couches de materiau epitaxie
TWI496189B (zh) * 2008-12-23 2015-08-11 Siltectra Gmbh 製造具結構表面之固態材料之薄獨立層的方法
NL2003250C2 (en) * 2009-07-20 2011-01-24 Metal Membranes Com B V Method for producing a membrane and such membrane.
FR2967813B1 (fr) * 2010-11-18 2013-10-04 Soitec Silicon On Insulator Procédé de réalisation d'une structure a couche métallique enterrée
TWI449224B (zh) * 2011-02-25 2014-08-11 Univ Nat Chiao Tung 半導體發光元件
JP5704602B2 (ja) * 2011-03-17 2015-04-22 リンテック株式会社 薄型半導体装置の製造方法および脆質部材用支持体
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
CN102560676B (zh) * 2012-01-18 2014-08-06 山东大学 一种使用减薄键合结构进行GaN单晶生长的方法
TWI474381B (zh) * 2012-08-17 2015-02-21 Nat Univ Chung Hsing Preparation method of epitaxial substrate
CN103074672A (zh) * 2013-01-06 2013-05-01 向勇 一种单晶硅的气相外延生长方法
CN103545239B (zh) * 2013-09-17 2017-01-11 新磊半导体科技（苏州）有限公司 一种基于薄膜型的外延片剥离工艺
KR101578717B1 (ko) * 2014-05-20 2015-12-22 주식회사 루미스탈 질화갈륨 웨이퍼를 제조하는 방법
FR3036224B1 (fr) * 2015-05-13 2017-06-02 Commissariat Energie Atomique Procede de collage direct
CN107750400A (zh) * 2015-06-19 2018-03-02 Qmat股份有限公司 接合和释放层转移工艺
EP3451203A1 (fr) * 2017-08-30 2019-03-06 Dassault Systèmes Procédé mis en uvre par ordinateur pour calculer une enveloppe pour un bâtiment conforme aux exigences relatives à la durée de l'ombre
CN108010834A (zh) * 2017-11-22 2018-05-08 电子科技大学 一种柔性单晶薄膜及其制备与转移方法
FR3079532B1 (fr) 2018-03-28 2022-03-25 Soitec Silicon On Insulator Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain
JP7204625B2 (ja) 2019-07-25 2023-01-16 信越化学工業株式会社 Ｉｉｉ族化合物基板の製造方法及びその製造方法により製造した基板
WO2021014834A1 (fr) * 2019-07-25 2021-01-28 信越化学工業株式会社 Procédé de production de substrat de composé du groupe iii et substrat produit par ce procédé de production
FR3108439B1 (fr) * 2020-03-23 2022-02-11 Soitec Silicon On Insulator Procede de fabrication d’une structure empilee
CN113555277A (zh) * 2020-04-23 2021-10-26 无锡华润上华科技有限公司 碳化硅器件及其制备方法
WO2025062300A1 (fr) * 2023-09-22 2025-03-27 Silanna UV Technologies Pte Ltd Dispositif à semi-conducteur avec transfert de couche
CN117690943B (zh) * 2024-01-31 2024-06-04 合肥晶合集成电路股份有限公司 一种图像传感器的制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10223496A (ja) * 1997-02-12 1998-08-21 Ion Kogaku Kenkyusho:Kk 単結晶ウエハおよびその製造方法
KR20010021496A (ko) * 1997-07-03 2001-03-15 추후제출 에피택셜 필름의 결함 제거 방법
FR2767416B1 (fr) * 1997-08-12 1999-10-01 Commissariat Energie Atomique Procede de fabrication d'un film mince de materiau solide
FR2774214B1 (fr) * 1998-01-28 2002-02-08 Commissariat Energie Atomique PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI
US6335263B1 (en) * 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
FR2807074B1 (fr) * 2000-04-03 2002-12-06 Soitec Silicon On Insulator Procede et dispositif de fabrication de substrats
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
JP3729065B2 (ja) * 2000-12-05 2005-12-21 日立電線株式会社 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ
JP4127463B2 (ja) * 2001-02-14 2008-07-30 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の結晶成長方法及びｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP4633962B2 (ja) * 2001-05-18 2011-02-16 日亜化学工業株式会社 窒化物半導体基板の製造方法
JP2003068654A (ja) * 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法
JP2003095798A (ja) * 2001-09-27 2003-04-03 Hoya Corp 単結晶基板の製造方法
KR101072433B1 (ko) * 2005-03-21 2011-10-11 삼성코닝정밀소재 주식회사 질화물계 반도체 단결정 기판의 제조방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916929B2 (en) 2004-06-10 2014-12-23 Power Integrations, Inc. MOSFET having a JFET embedded as a body diode
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
EP4128329B1 (fr) * 2020-03-27 2024-04-03 Soitec Procede de fabrication d'une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic
EP4128328B1 (fr) * 2020-03-27 2024-04-03 Soitec Procede de fabrication d'une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic
US12320031B2 (en) 2020-03-27 2025-06-03 Soitec Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC

Also Published As

Publication number Publication date
JP2006528592A (ja) 2006-12-21
KR100798976B1 (ko) 2008-01-28
FR2857982A1 (fr) 2005-01-28
JP5031364B2 (ja) 2012-09-19
EP1664396A1 (fr) 2006-06-07
TW200517532A (en) 2005-06-01
TWI278540B (en) 2007-04-11
ATE524577T1 (de) 2011-09-15
CN1826434A (zh) 2006-08-30
EP1664396B1 (fr) 2011-09-14
WO2005014895A1 (fr) 2005-02-17
CN100415947C (zh) 2008-09-03
KR20060036472A (ko) 2006-04-28

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