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DE60314648D1 - Einkristalliner diamant - Google Patents

Einkristalliner diamant

Info

Publication number
DE60314648D1
DE60314648D1 DE60314648T DE60314648T DE60314648D1 DE 60314648 D1 DE60314648 D1 DE 60314648D1 DE 60314648 T DE60314648 T DE 60314648T DE 60314648 T DE60314648 T DE 60314648T DE 60314648 D1 DE60314648 D1 DE 60314648D1
Authority
DE
Germany
Prior art keywords
diamond
cvd
substrate
single crystal
large area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60314648T
Other languages
English (en)
Other versions
DE60314648T2 (de
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
Daniel James Twitchen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Ltd
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Application granted granted Critical
Publication of DE60314648D1 publication Critical patent/DE60314648D1/de
Publication of DE60314648T2 publication Critical patent/DE60314648T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DE60314648T 2002-09-20 2003-09-19 Einkristalliner diamant Expired - Lifetime DE60314648T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0221949.1A GB0221949D0 (en) 2002-09-20 2002-09-20 Single crystal diamond
GB0221949 2002-09-20
PCT/IB2003/004057 WO2004027123A1 (en) 2002-09-20 2003-09-19 Single crystal diamond

Publications (2)

Publication Number Publication Date
DE60314648D1 true DE60314648D1 (de) 2007-08-09
DE60314648T2 DE60314648T2 (de) 2007-10-25

Family

ID=9944519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60314648T Expired - Lifetime DE60314648T2 (de) 2002-09-20 2003-09-19 Einkristalliner diamant

Country Status (16)

Country Link
US (3) US20040177803A1 (de)
EP (1) EP1543181B1 (de)
JP (3) JP4949627B2 (de)
KR (1) KR101078970B1 (de)
CN (5) CN1681976B (de)
AT (1) ATE365818T1 (de)
AU (1) AU2003263447A1 (de)
CA (1) CA2496710C (de)
DE (1) DE60314648T2 (de)
ES (1) ES2287565T3 (de)
GB (6) GB0221949D0 (de)
IL (1) IL166897A (de)
RU (1) RU2332532C2 (de)
TW (1) TWI323299B (de)
WO (1) WO2004027123A1 (de)
ZA (1) ZA200501294B (de)

Families Citing this family (42)

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JP4695821B2 (ja) * 2000-06-15 2011-06-08 エレメント シックス （プロプライエタリイ）リミテッド Ｃｖｄにより造られた単結晶ダイヤモンド
KR100839707B1 (ko) * 2000-06-15 2008-06-19 엘리먼트 씩스 (프티) 리미티드 두꺼운 단결정 다이아몬드 층, 이의 제조방법 및 상기층으로부터 제조된 젬스톤
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
ATE489490T1 (de) * 2002-09-06 2010-12-15 Element Six Ltd Verfahren zum ändern die farbe eines cvd-artigen diamanteinkristalles und dadurch hergestellte diamant-schicht
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
KR100683574B1 (ko) * 2004-10-19 2007-02-16 한국과학기술연구원 기하학적 형태의 다이아몬드 쉘 및 그 제조방법
JP5163920B2 (ja) * 2005-03-28 2013-03-13 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板
WO2007029269A1 (en) * 2005-09-05 2007-03-15 Rajneesh Bhandari Synthesis of large homoepitaxial monocrystalline diamond
EP1957689B1 (de) * 2005-12-09 2011-04-20 Element Six Technologies (PTY) LTD Synthetischer diamant mit hoher kristalliner qualität
JP2010517261A (ja) 2007-01-22 2010-05-20 エレメント シックス リミテッド 電子電界効果デバイス及びそれらの製造方法
US8342164B2 (en) * 2008-05-09 2013-01-01 SCIO Diamond Technology Corporation Gemstone production from CVD diamond plate
JP4803464B2 (ja) * 2008-07-04 2011-10-26 独立行政法人産業技術総合研究所 単結晶ダイヤモンドの表面損傷の除去方法
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB2476306B (en) 2009-12-21 2012-07-11 Element Six Ltd Single crystal diamond material
US9157170B2 (en) 2009-12-21 2015-10-13 Element Six Technologies Limited Single crystal diamond material
GB201000768D0 (en) * 2010-01-18 2010-03-03 Element Six Ltd CVD single crystal diamond material
US9017633B2 (en) * 2010-01-18 2015-04-28 Element Six Technologies Limited CVD single crystal diamond material
GB201021985D0 (en) * 2010-12-24 2011-02-02 Element Six Ltd Dislocation engineering in single crystal synthetic diamond material
US9963801B2 (en) 2013-04-09 2018-05-08 Sumitomo Electric Industries, Ltd. Single crystal diamond and diamond tool
GB201310212D0 (en) * 2013-06-07 2013-07-24 Element Six Ltd Post-synthesis processing of diamond and related super-hard materials
CN106574393B (zh) * 2014-07-22 2019-10-08 住友电气工业株式会社 单晶金刚石及其制造方法、包含单晶金刚石的工具和包含单晶金刚石的部件
JP6041229B2 (ja) * 2015-10-29 2016-12-07 住友電気工業株式会社 ダイヤモンド複合体、ダイヤモンド複合体の製造方法、及び単結晶ダイヤモンドの製造方法
CN109923247B (zh) * 2016-11-10 2022-03-01 六号元素技术有限公司 经由化学气相沉积合成厚的单晶金刚石材料
JP6217949B2 (ja) * 2016-11-10 2017-10-25 住友電気工業株式会社 単結晶ダイヤモンド
TWI706061B (zh) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 大單晶鑽石及其生產方法
CN107675249B (zh) * 2017-09-08 2020-07-07 西安电子科技大学 单晶金刚石的扩径生长方法
ES2724214B2 (es) 2018-03-01 2020-01-15 Business Res And Diamonds S L Procedimiento para la obtencion de diamantes sinteticos a partir de la sacarosa y equipo para llevar a cabo dicho procedimiento
CN108360065A (zh) * 2018-04-12 2018-08-03 西安交通大学 一种生长单晶金刚石的方法及生长结构
CN108908762A (zh) * 2018-06-15 2018-11-30 西安碳星半导体科技有限公司 Cvd生长宝石级厚单晶金刚石切割方法
CN108677246A (zh) * 2018-06-26 2018-10-19 西安交通大学 一种横向搭桥拼接生长大面积单晶金刚石的方法
CN108754600A (zh) * 2018-06-26 2018-11-06 西安交通大学 一种拼接生长大面积单晶金刚石的方法
GB201811162D0 (en) 2018-07-06 2018-08-29 Element Six Tech Ltd Method of manufacture of single crystal synthetic diamond material
CN108977880A (zh) * 2018-08-29 2018-12-11 西安交通大学 一种交叉拼接生长大面积单晶金刚石的方法
GB201918883D0 (en) * 2019-12-19 2020-02-05 Element Six Tech Ltd Method for producing chemical vapour deposition diamond
US12139812B2 (en) * 2020-01-20 2024-11-12 Advanced Diamond Holdings, Llc Method of growing bulk single crystal diamond on a substrate in a prescribed gas environment at a prescribed temperature and pressure
GB2614521A (en) 2021-10-19 2023-07-12 Element Six Tech Ltd CVD single crystal diamond
GB2614522B (en) 2021-10-19 2024-04-03 Element Six Tech Ltd CVD single crystal diamond
GB202305972D0 (en) 2023-04-24 2023-06-07 Element Six Tech Ltd Method of manufacturing single crystal diamonds
GB2630986A (en) 2023-06-16 2024-12-18 Element Six Tech Ltd Single crystal diamond product

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103994A (ja) * 1987-10-16 1989-04-21 Sumitomo Electric Ind Ltd ダイヤモンドの単結晶成長方法
JP2571795B2 (ja) 1987-11-17 1997-01-16 住友電気工業株式会社 紫色ダイヤモンドおよびその製造方法
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
US5360479A (en) * 1990-07-02 1994-11-01 General Electric Company Isotopically pure single crystal epitaxial diamond films and their preparation
US5614019A (en) * 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
JPH0687691A (ja) * 1992-09-04 1994-03-29 Sumitomo Electric Ind Ltd ダイヤモンドの製造方法およびダイヤモンドの製造方法に使用するダイヤモンド単結晶基材
US5474021A (en) * 1992-09-24 1995-12-12 Sumitomo Electric Industries, Ltd. Epitaxial growth of diamond from vapor phase
JPH06107494A (ja) 1992-09-24 1994-04-19 Sumitomo Electric Ind Ltd ダイヤモンドの気相成長法
JPH06227895A (ja) * 1993-02-04 1994-08-16 Sumitomo Electric Ind Ltd ダイヤモンドの合成法
JP3314444B2 (ja) 1993-03-15 2002-08-12 住友電気工業株式会社 赤色ダイヤモンドおよび桃色ダイヤモンド
JP3484749B2 (ja) 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
JP4291886B2 (ja) * 1994-12-05 2009-07-08 住友電気工業株式会社 低欠陥ダイヤモンド単結晶及びその合成方法
JP4032482B2 (ja) * 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
JPH113994A (ja) 1997-06-11 1999-01-06 Miyazaki Oki Electric Co Ltd 突起構造の形成方法、ｌｄｄ構造の形成方法、配線形成方法、およびトレンチ形成方法
JPH1131014A (ja) 1997-07-14 1999-02-02 Sumitomo Heavy Ind Ltd 位置制御方式及び速度制御方式
JPH11300194A (ja) * 1998-04-23 1999-11-02 Sumitomo Electric Ind Ltd 超高圧発生用ダイヤモンドアンビル
JP4695821B2 (ja) * 2000-06-15 2011-06-08 エレメント シックス （プロプライエタリイ）リミテッド Ｃｖｄにより造られた単結晶ダイヤモンド
KR100839707B1 (ko) * 2000-06-15 2008-06-19 엘리먼트 씩스 (프티) 리미티드 두꺼운 단결정 다이아몬드 층, 이의 제조방법 및 상기층으로부터 제조된 젬스톤
JP3968968B2 (ja) 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
JP2002265296A (ja) * 2001-03-09 2002-09-18 Kobe Steel Ltd ダイヤモンド薄膜及びその製造方法
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
ATE489490T1 (de) * 2002-09-06 2010-12-15 Element Six Ltd Verfahren zum ändern die farbe eines cvd-artigen diamanteinkristalles und dadurch hergestellte diamant-schicht
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material

Also Published As

Publication number Publication date
US9816202B2 (en) 2017-11-14
HK1127789A1 (en) 2009-10-09
GB2409468A (en) 2005-06-29
CN1681976A (zh) 2005-10-12
US20040177803A1 (en) 2004-09-16
IL166897A (en) 2009-12-24
CN101319358A (zh) 2008-12-10
JP5717518B2 (ja) 2015-05-13
GB2429213B (en) 2007-04-18
US20080085233A1 (en) 2008-04-10
US9518338B2 (en) 2016-12-13
GB2429212B (en) 2007-04-18
GB2409468B (en) 2007-03-28
HK1127792A1 (en) 2009-10-09
JP2011168487A (ja) 2011-09-01
EP1543181A1 (de) 2005-06-22
ZA200501294B (en) 2006-11-29
EP1543181B1 (de) 2007-06-27
ES2287565T3 (es) 2007-12-16
GB0623783D0 (en) 2007-01-10
KR20050067394A (ko) 2005-07-01
GB0508004D0 (en) 2005-05-25
GB0623784D0 (en) 2007-01-10
WO2004027123A1 (en) 2004-04-01
CN101319360A (zh) 2008-12-10
HK1127791A1 (en) 2009-10-09
RU2332532C2 (ru) 2008-08-27
CN101319361A (zh) 2008-12-10
KR101078970B1 (ko) 2011-11-01
JP2006508881A (ja) 2006-03-16
CN101319360B (zh) 2012-12-26
CA2496710C (en) 2011-09-06
GB2429215A (en) 2007-02-21
CN1681976B (zh) 2010-04-07
JP4949627B2 (ja) 2012-06-13
TWI323299B (en) 2010-04-11
GB0221949D0 (en) 2002-10-30
TW200422446A (en) 2004-11-01
CN101319359A (zh) 2008-12-10
JP2010001215A (ja) 2010-01-07
HK1127790A1 (en) 2009-10-09
CN101319361B (zh) 2011-06-29
HK1078906A1 (zh) 2006-03-24
CN101319358B (zh) 2012-01-25
GB0623781D0 (en) 2007-01-10
CA2496710A1 (en) 2004-04-01
RU2005111972A (ru) 2006-12-10
GB0623782D0 (en) 2007-01-10
JP5312281B2 (ja) 2013-10-09
DE60314648T2 (de) 2007-10-25
GB2429212A (en) 2007-02-21
ATE365818T1 (de) 2007-07-15
GB2429214A (en) 2007-02-21
US20170037539A1 (en) 2017-02-09
AU2003263447A1 (en) 2004-04-08
CN101319359B (zh) 2012-05-30
GB2429213A (en) 2007-02-21

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