[go: up one dir, main page]

FR3079535B1 - Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium - Google Patents

Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium Download PDF

Info

Publication number
FR3079535B1
FR3079535B1 FR1800255A FR1800255A FR3079535B1 FR 3079535 B1 FR3079535 B1 FR 3079535B1 FR 1800255 A FR1800255 A FR 1800255A FR 1800255 A FR1800255 A FR 1800255A FR 3079535 B1 FR3079535 B1 FR 3079535B1
Authority
FR
France
Prior art keywords
diamond
monocrystalline layer
iridium material
growth
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1800255A
Other languages
English (en)
Other versions
FR3079535A1 (fr
Inventor
Bruno Ghyselen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1800255A priority Critical patent/FR3079535B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to US17/042,728 priority patent/US11935743B2/en
Priority to KR1020207030291A priority patent/KR102654904B1/ko
Priority to PCT/IB2019/000196 priority patent/WO2019186262A1/fr
Priority to JP2020549793A priority patent/JP7408893B2/ja
Priority to CN201980021528.8A priority patent/CN111936676A/zh
Priority to SG11202009528QA priority patent/SG11202009528QA/en
Priority to EP19721378.8A priority patent/EP3775329A1/fr
Publication of FR3079535A1 publication Critical patent/FR3079535A1/fr
Application granted granted Critical
Publication of FR3079535B1 publication Critical patent/FR3079535B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Procédé de fabrication d'une couche monocristalline de matériau diamant ou iridium comprenant le transfert d'une couche germe monocristalline de matériau SrTiO3 sur un substrat support de matériau silicium suivi d'une croissance par épitaxie de la couche monocristalline de matériau diamant ou iridium.
FR1800255A 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium Active FR3079535B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1800255A FR3079535B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium
KR1020207030291A KR102654904B1 (ko) 2018-03-28 2019-03-26 다이아몬드 또는 이리듐 재질의 단결정 층을 제조하는 방법 및 다이아몬드 또는 이리듐 재질의 단결정 층의 에피택셜 성장을 위한 기판
PCT/IB2019/000196 WO2019186262A1 (fr) 2018-03-28 2019-03-26 Procédé de fabrication d'une couche monocristalline de matériau diamant ou iridium et substrat pour croissance par épitaxie d'une couche monocristalline de matériau diamant ou iridium
JP2020549793A JP7408893B2 (ja) 2018-03-28 2019-03-26 ダイヤモンド又はイリジウム材料の単結晶層を製造するための方法、及びダイヤモンド又はイリジウム材料の単結晶層をエピタキシャル成長させるための基板
US17/042,728 US11935743B2 (en) 2018-03-28 2019-03-26 Method for manufacturing a monocrystalline layer of diamond or iridium material and substrate for epitaxially growing a monocrystalline layer of diamond or iridium material
CN201980021528.8A CN111936676A (zh) 2018-03-28 2019-03-26 金刚石或铱材料单晶层的制造方法和外延生长金刚石或铱材料单晶层的衬底
SG11202009528QA SG11202009528QA (en) 2018-03-28 2019-03-26 Method for manufacturing a monocrystalline layer of diamond or iridium material, and substrate for epitaxically growing a monocrystalline layer of diamond or iridium material
EP19721378.8A EP3775329A1 (fr) 2018-03-28 2019-03-26 Procédé de fabrication d'une couche monocristalline de matériau diamant ou iridium et substrat pour croissance par épitaxie d'une couche monocristalline de matériau diamant ou iridium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1800255A FR3079535B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium
FR1800255 2018-03-28

Publications (2)

Publication Number Publication Date
FR3079535A1 FR3079535A1 (fr) 2019-10-04
FR3079535B1 true FR3079535B1 (fr) 2022-03-18

Family

ID=63079954

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1800255A Active FR3079535B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium

Country Status (8)

Country Link
US (1) US11935743B2 (fr)
EP (1) EP3775329A1 (fr)
JP (1) JP7408893B2 (fr)
KR (1) KR102654904B1 (fr)
CN (1) CN111936676A (fr)
FR (1) FR3079535B1 (fr)
SG (1) SG11202009528QA (fr)
WO (1) WO2019186262A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3079531B1 (fr) * 2018-03-28 2022-03-18 Soitec Silicon On Insulator Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt
CN113373512B (zh) * 2021-05-24 2022-02-11 北京科技大学 基于铱-石墨烯结构化缓冲层的单晶金刚石外延生长方法
CN113832541B (zh) * 2021-09-29 2024-02-09 太原理工大学 用于外延生长大尺寸单晶金刚石的复合衬底的制备方法
JP2023116122A (ja) * 2022-02-09 2023-08-22 信越化学工業株式会社 下地基板及び単結晶ダイヤモンド積層基板並びにそれらの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124125A (ja) 2000-10-17 2002-04-26 Masaru Hiyamizu 照明器具つき屏風と衝立
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US6562127B1 (en) * 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates
JP4016102B2 (ja) * 2003-01-17 2007-12-05 独立行政法人産業技術総合研究所 パルスレーザ蒸着によるダイアモンドの結晶薄膜の作製方法及び同方法で作製した薄膜
DE10320133B4 (de) 2003-05-06 2011-02-10 Universität Augsburg Verfahren zur Herstellung von einkristallinen oder quasi-einkristallinen Diamantschichten und auf einem Körper angeordnete einkristalline oder quasi-einkristalline Diamantschicht
JP5468528B2 (ja) * 2010-06-28 2014-04-09 信越化学工業株式会社 単結晶ダイヤモンド成長用基材及びその製造方法並びに単結晶ダイヤモンド基板の製造方法
US9064789B2 (en) * 2013-08-12 2015-06-23 International Business Machines Corporation Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
WO2016114382A1 (fr) 2015-01-16 2016-07-21 住友電気工業株式会社 Procédé de fabrication de substrat semi-conducteur, substrat semi-conducteur, procédé de fabrication de substrat semi-conducteur composite, substrat semi-conducteur composite, et substrat de soudage semi-conducteur
JP7017299B2 (ja) * 2015-07-30 2022-02-08 信越化学工業株式会社 ダイヤモンド電子素子及びダイヤモンド電子素子の製造方法
CN107268076A (zh) * 2017-07-28 2017-10-20 西安交通大学 一种基于异质外延生长单晶金刚石的方法

Also Published As

Publication number Publication date
SG11202009528QA (en) 2020-10-29
CN111936676A (zh) 2020-11-13
KR102654904B1 (ko) 2024-04-04
EP3775329A1 (fr) 2021-02-17
JP7408893B2 (ja) 2024-01-09
KR20200136437A (ko) 2020-12-07
JP2021518322A (ja) 2021-08-02
US20210020434A1 (en) 2021-01-21
US11935743B2 (en) 2024-03-19
WO2019186262A1 (fr) 2019-10-03
FR3079535A1 (fr) 2019-10-04

Similar Documents

Publication Publication Date Title
FR3079535B1 (fr) Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium
FR3079532B1 (fr) Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain
FR3103962B1 (fr) Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic cristallin
EP3666937C0 (fr) Substrat de carbure de silicium monocristallin à planéité élevée, à faible endommagement et de grand diamètre, et son procédé de fabrication
SG148930A1 (en) Process for fabricating a structure for epitaxy without an exclusion zone
EP2840594A3 (fr) Recristallisation de blocs de source et de drain par le haut
RU2018113434A (ru) Способ изготовления составной подложки из sic
EP4128328C0 (fr) Procede de fabrication d'une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic
FR3045678B1 (fr) Procede de fabrication d'une couche piezoelectrique monocristalline et dispositif microelectronique, photonique ou optique comprenant une telle couche
GB2534675A8 (en) Compound semiconductor device structures comprising polycrystalline CVD diamond
EP4128329C0 (fr) Procede de fabrication d'une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic
EP4032700A4 (fr) Procédé de fabrication de substrat de nitrure de silicium
TWD207362S (zh) 半導體製造用之晶圓用的支撐器具
FR3079534B1 (fr) Procede de fabrication d'une couche monocristalline de materiau gaas et substrat pour croissance par epitaxie d'une couche monocristalline de materiau gaas
JP6812572B2 (ja) 半導体ウェハの表面上への層の堆積の間に配向ノッチを有する半導体ウェハを保持するためのサセプタおよびサセプタを用いることによって層を堆積する方法
FR3079533B1 (fr) Procede de fabrication d'une couche monocristalline de materiau lno et substrat pour croissance par epitaxie d'une couche monocristalline de materiau lno
FR3079531B1 (fr) Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt
EP4066275C0 (fr) Procede de fabrication d'une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic
WO2003015138A3 (fr) Transistors a effet de champ (tec) a canal enterre optimises bases sur des heterostructures sige
EP3960912A4 (fr) Procédé de fabrication de substrat de sic, dispositif de fabrication associé, et procédé de croissance épitaxiale
EP3730676A3 (fr) Techniques de tranche virtuelle pour la fabrication de dispositifs semiconducteurs
FR3073665B1 (fr) Procede de fabrication de couche mince transferable
JP2022534935A (ja) ウェハの表面にエピタキシャル層を堆積させる方法、およびこの方法を実施するための装置
FR3085538B1 (fr) Tranche soi et son procede de production
FR3056825B1 (fr) Structure comprenant des ilots semi-conducteurs monocristallins, procede de fabrication d'une telle structure

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20191004

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8