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FR3079531B1 - Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt - Google Patents

Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt Download PDF

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Publication number
FR3079531B1
FR3079531B1 FR1800253A FR1800253A FR3079531B1 FR 3079531 B1 FR3079531 B1 FR 3079531B1 FR 1800253 A FR1800253 A FR 1800253A FR 1800253 A FR1800253 A FR 1800253A FR 3079531 B1 FR3079531 B1 FR 3079531B1
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FR
France
Prior art keywords
pzt material
monocrystalline layer
growth
manufacturing
epitaxis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1800253A
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English (en)
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FR3079531A1 (fr
Inventor
Bruno Ghyselen
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Soitec SA
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Soitec SA
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Filing date
Publication date
Priority to FR1800253A priority Critical patent/FR3079531B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to SG11202009530VA priority patent/SG11202009530VA/en
Priority to KR1020207030290A priority patent/KR102636121B1/ko
Priority to PCT/IB2019/000201 priority patent/WO2019186264A1/fr
Priority to EP19722177.3A priority patent/EP3775332A1/fr
Priority to US17/042,657 priority patent/US11877514B2/en
Priority to CN201980021417.7A priority patent/CN111918986A/zh
Priority to JP2020549791A priority patent/JP7451845B2/ja
Publication of FR3079531A1 publication Critical patent/FR3079531A1/fr
Application granted granted Critical
Publication of FR3079531B1 publication Critical patent/FR3079531B1/fr
Priority to US18/464,918 priority patent/US20230422619A1/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procédé de fabrication d'une couche cristalline de matériau PZT comprenant le transfert d'une couche germe monocristalline de matériau SrTiO3 sur un substrat support de matériau silicium suivi d'une croissance par épitaxie de la couche cristalline de matériau PZT.
FR1800253A 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt Active FR3079531B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1800253A FR3079531B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt
KR1020207030290A KR102636121B1 (ko) 2018-03-28 2019-03-26 Pzt 재질의 결정 층을 제조하는 방법 및 pzt 재질의 결정 층의 에피택셜 성장을 위한 기판
PCT/IB2019/000201 WO2019186264A1 (fr) 2018-03-28 2019-03-26 Procede de fabrication d'une couche cristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche cristalline de materiau pzt
EP19722177.3A EP3775332A1 (fr) 2018-03-28 2019-03-26 Procede de fabrication d'une couche cristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche cristalline de materiau pzt
SG11202009530VA SG11202009530VA (en) 2018-03-28 2019-03-26 Method for manufacturing a crystalline layer of pzt material, and substrate for epitaxially growing a crystalline layer of pzt material
US17/042,657 US11877514B2 (en) 2018-03-28 2019-03-26 Method for producing a crystalline layer of PZT material by transferring a seed layer of SrTiO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT
CN201980021417.7A CN111918986A (zh) 2018-03-28 2019-03-26 Pzt材料结晶层的制造方法和外延生长pzt材料结晶层的衬底
JP2020549791A JP7451845B2 (ja) 2018-03-28 2019-03-26 Ｐｚｔ材料の結晶層を製造するための方法、及びｐｚｔ材料の結晶層をエピタキシャル成長させるための基板
US18/464,918 US20230422619A1 (en) 2018-03-28 2023-09-11 Method for producing a crystalline layer of pzt material by transferring a seed layer of srtio3 to a silicon carrier substrate and epitaxially growing the crystalline layer of pzt, and substrate for epitaxial growth of a crystalline layer of pzt

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1800253 2018-03-28
FR1800253A FR3079531B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt

Publications (2)

Publication Number Publication Date
FR3079531A1 FR3079531A1 (fr) 2019-10-04
FR3079531B1 true FR3079531B1 (fr) 2022-03-18

Family

ID=63834052

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1800253A Active FR3079531B1 (fr) 2018-03-28 2018-03-28 Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt

Country Status (8)

Country Link
US (2) US11877514B2 (fr)
EP (1) EP3775332A1 (fr)
JP (1) JP7451845B2 (fr)
KR (1) KR102636121B1 (fr)
CN (1) CN111918986A (fr)
FR (1) FR3079531B1 (fr)
SG (1) SG11202009530VA (fr)
WO (1) WO2019186264A1 (fr)

Family Cites Families (20)

* Cited by examiner, † Cited by third party
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JPH05234419A (ja) * 1991-11-21 1993-09-10 Toshiba Corp 誘電体を用いた素子
US5442585A (en) * 1992-09-11 1995-08-15 Kabushiki Kaisha Toshiba Device having dielectric thin film
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US7407869B2 (en) * 2000-11-27 2008-08-05 S.O.I.Tec Silicon On Insulator Technologies Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
EP1482549B1 (fr) * 2003-05-27 2011-03-30 S.O.I. Tec Silicon on Insulator Technologies S.A. Procédé pour la fabrication d'une microstructure heteroepitaxiale
FR2835096B1 (fr) * 2002-01-22 2005-02-18 Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin
US6593212B1 (en) * 2001-10-29 2003-07-15 The United States Of America As Represented By The Secretary Of The Navy Method for making electro-optical devices using a hydrogenion splitting technique
JP4100953B2 (ja) 2002-04-18 2008-06-11 キヤノン株式会社 Ｓｉ基板上に単結晶酸化物導電体を有する積層体及びそれを用いたアクチュエーター及びインクジェットヘッドとその製造方法
JP4401300B2 (ja) 2003-03-04 2010-01-20 富士通株式会社 （００１）配向したペロブスカイト膜の形成方法、およびかかるペロブスカイト膜を有する装置
FR2883659B1 (fr) 2005-03-24 2007-06-22 Soitec Silicon On Insulator Procede de fabrication d'une hetero-structure comportant au moins une couche epaisse de materiau semi-conducteur
US20060288928A1 (en) * 2005-06-10 2006-12-28 Chang-Beom Eom Perovskite-based thin film structures on miscut semiconductor substrates
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
US9564320B2 (en) * 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US20150014853A1 (en) 2013-07-09 2015-01-15 Harper Laboratories, LLC Semiconductor devices comprising edge doped graphene and methods of making the same
US9064789B2 (en) * 2013-08-12 2015-06-23 International Business Machines Corporation Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
WO2016203955A1 (fr) * 2015-06-18 2016-12-22 コニカミノルタ株式会社 Élément piézoélectrique, tête à jet d'encre, imprimante à jet d'encre, et procédé de fabrication d'élément piézoélectrique
FR3041364B1 (fr) 2015-09-18 2017-10-06 Soitec Silicon On Insulator Procede de transfert de paves monocristallins
JP6776074B2 (ja) 2016-09-16 2020-10-28 株式会社東芝 圧電デバイスおよび超音波装置
FR3079535B1 (fr) * 2018-03-28 2022-03-18 Soitec Silicon On Insulator Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium

Also Published As

Publication number Publication date
FR3079531A1 (fr) 2019-10-04
JP2021518321A (ja) 2021-08-02
KR102636121B1 (ko) 2024-02-13
KR20200136436A (ko) 2020-12-07
CN111918986A (zh) 2020-11-10
US20210074906A1 (en) 2021-03-11
US20230422619A1 (en) 2023-12-28
EP3775332A1 (fr) 2021-02-17
WO2019186264A1 (fr) 2019-10-03
US11877514B2 (en) 2024-01-16
SG11202009530VA (en) 2020-10-29
JP7451845B2 (ja) 2024-03-19

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