[go: up one dir, main page]

FR2972195B1 - Composition de polissage chimico-mecanique, exempte de cellulose hydrosoluble, concentrable, stable - Google Patents

Composition de polissage chimico-mecanique, exempte de cellulose hydrosoluble, concentrable, stable

Info

Publication number
FR2972195B1
FR2972195B1 FR1251977A FR1251977A FR2972195B1 FR 2972195 B1 FR2972195 B1 FR 2972195B1 FR 1251977 A FR1251977 A FR 1251977A FR 1251977 A FR1251977 A FR 1251977A FR 2972195 B1 FR2972195 B1 FR 2972195B1
Authority
FR
France
Prior art keywords
mechanical polishing
substrate
water
optionally
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1251977A
Other languages
English (en)
Other versions
FR2972195A1 (fr
Inventor
Hamed Lakrout
Jinjie Shi
Joseph Letizia
Xu Li
Thomas H Kalantar
Francis Kelley
Keith J Harris
Christopher J Tucker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2972195A1 publication Critical patent/FR2972195A1/fr
Application granted granted Critical
Publication of FR2972195B1 publication Critical patent/FR2972195B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Une composition de polissage chimico-mécanique utile pour polissage chimico-mécanique d'une plaquette de semiconducteurs contenant un métal d'interconnexion, est fournie, comprenant, en tant que composants initiaux : de l'eau ; un inhibiteur de type azole ; un agent tensio-actif organique de métal alcalin ; un hydrotrope ; un agent contenant du phosphore ; éventuellement, un polymère non saccharidique hydrosoluble ; éventuellement, un composé acide hydrosoluble de formule I ; éventuellement, un agent complexant ; éventuellement, un agent oxydant ; éventuellement, un solvant organique ; éventuellement, un abrasif. Par ailleurs il est également fourni un procédé de fabrication d'une composition de la présente invention et un procédé de polissage chimico-mécanique d'un substrat, comprenant : la fourniture d'un substrat, le substrat étant une plaquette de semi-conducteurs avec interconnexions en cuivre ; la fourniture d'une composition selon la présente invention ; la fourniture d'un tampon de polissage chimico-mécanique ; la création d'un contact dynamique à une interface entre le tampon et le substrat avec application d'une force vers le bas de 0,69 à 34,5 kPa, et la répartition de la composition sur le tampon à l'interface ou près de l'interface entre le tampon et le substrat ; dans lequel la composition présente un pH ajusté à un pH de 2 à 6 par ajout d'au moins un parmi l'acide phosphorique, l'hydroxyde de magnésium et l'hydroxyde de lithium.
FR1251977A 2011-03-03 2012-03-05 Composition de polissage chimico-mecanique, exempte de cellulose hydrosoluble, concentrable, stable Expired - Fee Related FR2972195B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/039,705 US8440097B2 (en) 2011-03-03 2011-03-03 Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition

Publications (2)

Publication Number Publication Date
FR2972195A1 FR2972195A1 (fr) 2012-09-07
FR2972195B1 true FR2972195B1 (fr) 2015-08-28

Family

ID=46671507

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1251977A Expired - Fee Related FR2972195B1 (fr) 2011-03-03 2012-03-05 Composition de polissage chimico-mecanique, exempte de cellulose hydrosoluble, concentrable, stable

Country Status (7)

Country Link
US (1) US8440097B2 (fr)
JP (1) JP6118501B2 (fr)
KR (1) KR101829639B1 (fr)
CN (1) CN102690609B (fr)
DE (1) DE102012004219A1 (fr)
FR (1) FR2972195B1 (fr)
TW (1) TWI602909B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435896B2 (en) * 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8545715B1 (en) 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
US20140308814A1 (en) * 2013-04-15 2014-10-16 Applied Materials, Inc Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions
US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
JP7209620B2 (ja) * 2017-03-14 2023-01-20 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法
EP3631045A4 (fr) * 2017-05-25 2021-01-27 Fujifilm Electronic Materials U.S.A., Inc. Suspension concentrée de polissage mécano-chimique pour des applications de cobalt
KR102570805B1 (ko) * 2019-11-01 2023-08-24 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법
TW202229478A (zh) * 2020-09-29 2022-08-01 日商福吉米股份有限公司 研磨用組成物及其製造方法、研磨方法以及基板的製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG99289A1 (en) 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
JP3551238B2 (ja) * 1999-09-07 2004-08-04 三菱住友シリコン株式会社 シリコンウェーハの研磨液及びこれを用いた研磨方法
JP2004533115A (ja) 2001-04-12 2004-10-28 ロデール　ホールディングス　インコーポレイテッド 界面活性剤を有する研磨用組成物
US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP4641155B2 (ja) * 2004-06-03 2011-03-02 株式会社日本触媒 化学機械研磨用の研磨剤
US20060000808A1 (en) * 2004-07-01 2006-01-05 Fuji Photo Film Co., Ltd. Polishing solution of metal and chemical mechanical polishing method
US7384871B2 (en) 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7086935B2 (en) 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7824568B2 (en) 2006-08-17 2010-11-02 International Business Machines Corporation Solution for forming polishing slurry, polishing slurry and related methods
JP2008091411A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
US20090032765A1 (en) * 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
TW200920828A (en) * 2007-09-20 2009-05-16 Fujifilm Corp Polishing slurry for metal and chemical mechanical polishing method
US9633865B2 (en) * 2008-02-22 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low-stain polishing composition
US20090215266A1 (en) 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
JP4521058B2 (ja) * 2008-03-24 2010-08-11 株式会社Ａｄｅｋａ 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物
US8540893B2 (en) 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto

Also Published As

Publication number Publication date
FR2972195A1 (fr) 2012-09-07
US20120225556A1 (en) 2012-09-06
CN102690609A (zh) 2012-09-26
TWI602909B (zh) 2017-10-21
CN102690609B (zh) 2014-11-26
US8440097B2 (en) 2013-05-14
KR101829639B1 (ko) 2018-03-29
DE102012004219A1 (de) 2012-09-06
JP6118501B2 (ja) 2017-04-19
KR20120100820A (ko) 2012-09-12
JP2012199531A (ja) 2012-10-18
TW201302997A (zh) 2013-01-16

Similar Documents

Publication Publication Date Title
FR2972195B1 (fr) Composition de polissage chimico-mecanique, exempte de cellulose hydrosoluble, concentrable, stable
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
TW200718763A (en) Polymeric barrier removal polishing slurry
HK1148110A1 (en) Etching agent, etching method and liquid for preparing etching agent
DE60323148D1 (de) Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
JP2012199531A5 (fr)
MY165517A (en) Method for wafer dicing and composition useful thereof
TW200734440A (en) Barrier polishing liquid and chemical mechanical polishing method
MY163201A (en) Silicon polishing compositions with improved psd performance
TW200701352A (en) Compositions for processing of semiconductor substrates
CN101912855B (zh) 蓝宝石衬底材料抛光后表面洁净方法
JP2008530279A5 (fr)
TW200940705A (en) Copper CMP polishing pad cleaning composition comprising of amidoxime compounds
MY143651A (en) Process for producing silicon wafer
ATE528139T1 (de) VERFAHREN ZUR HERSTELLUNG EINES SUBSTRATS FÜR EINEN FLÜSSIGKEITSAUSSTOßKOPF
JPWO2009025383A1 (ja) 研磨組成物
ATE473516T1 (de) Poliermittel und polierverfahren
JP2004534862A (ja) 酸化剤および錯体化合物を備える組成物
TW200740968A (en) Polishing composition for silicon wafer
EP2093789A3 (fr) Polissage de tranches à motifs contenant du cuivre
CN105505230A (zh) 一种半导体硅片化学机械抛光清洗液
SG140530A1 (en) Alkaline etching solution for semiconductor wafer and alkaline etching method
CN102477258B (zh) 一种化学机械抛光液
SG169957A1 (en) A method for polishing through-silicon via (tsv) wafers and a polishing composition used in the method
TW200802578A (en) Chemical mechanical polishing method

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 9

ST Notification of lapse

Effective date: 20211105