DE60323148D1 - Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen - Google Patents
Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungenInfo
- Publication number
- DE60323148D1 DE60323148D1 DE60323148T DE60323148T DE60323148D1 DE 60323148 D1 DE60323148 D1 DE 60323148D1 DE 60323148 T DE60323148 T DE 60323148T DE 60323148 T DE60323148 T DE 60323148T DE 60323148 D1 DE60323148 D1 DE 60323148D1
- Authority
- DE
- Germany
- Prior art keywords
- phosphoric acid
- acid composition
- aqueous phosphoric
- conductor devices
- cleaning semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 title abstract 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 title abstract 2
- 238000004140 cleaning Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000007864 aqueous solution Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 239000002738 chelating agent Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3227—Ethers thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41996802P | 2002-10-22 | 2002-10-22 | |
US43036502P | 2002-12-03 | 2002-12-03 | |
PCT/US2003/033500 WO2004037962A2 (en) | 2002-10-22 | 2003-10-21 | Aqueous phosphoric acid compositions for cleaning semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60323148D1 true DE60323148D1 (de) | 2008-10-02 |
Family
ID=32179772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60323148T Expired - Lifetime DE60323148D1 (de) | 2002-10-22 | 2003-10-21 | Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen |
Country Status (10)
Country | Link |
---|---|
US (1) | US7235188B2 (de) |
EP (1) | EP1576072B1 (de) |
JP (1) | JP2006503972A (de) |
KR (1) | KR20050084917A (de) |
AT (1) | ATE405622T1 (de) |
AU (1) | AU2003286584A1 (de) |
DE (1) | DE60323148D1 (de) |
ES (1) | ES2310677T3 (de) |
TW (1) | TWI309675B (de) |
WO (1) | WO2004037962A2 (de) |
Families Citing this family (44)
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US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
WO2005076332A1 (ja) | 2004-02-09 | 2005-08-18 | Mitsubishi Chemical Corporation | 半導体デバイス用基板洗浄液及び洗浄方法 |
EP1628336B1 (de) * | 2004-08-18 | 2012-01-04 | Mitsubishi Gas Chemical Company, Inc. | Reinigungsmittel und Methode zur Reinigung |
US7922823B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
KR100675284B1 (ko) * | 2005-02-01 | 2007-01-26 | 삼성전자주식회사 | 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법 |
US7682458B2 (en) | 2005-02-03 | 2010-03-23 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
US7888302B2 (en) * | 2005-02-03 | 2011-02-15 | Air Products And Chemicals, Inc. | Aqueous based residue removers comprising fluoride |
US7754668B2 (en) * | 2005-05-06 | 2010-07-13 | Mallinckrodt Baker. Inc | Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist |
EP1949423A1 (de) * | 2005-10-21 | 2008-07-30 | Freescale Semiconductor, Inc. | Verfahren zum entfernen eines ätzrests und chemie dafür |
JP4693642B2 (ja) * | 2006-01-30 | 2011-06-01 | 株式会社東芝 | 半導体装置の製造方法および洗浄装置 |
TW200734448A (en) * | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
KR20070088245A (ko) * | 2006-02-24 | 2007-08-29 | 후지필름 가부시키가이샤 | 금속용 연마액 |
US20080039356A1 (en) * | 2006-07-27 | 2008-02-14 | Honeywell International Inc. | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
US20080139436A1 (en) * | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
WO2008039730A1 (en) * | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
KR100916353B1 (ko) * | 2007-07-13 | 2009-09-11 | 제일모직주식회사 | 반도체 소자용 세정액 조성물 및 이를 이용한 반도체소자의 세정 방법 |
US20090131295A1 (en) * | 2007-11-16 | 2009-05-21 | Hua Cui | Compositions for Removal of Metal Hard Mask Etching Residues from a Semiconductor Substrate |
TWI460557B (zh) * | 2008-03-07 | 2014-11-11 | Wako Pure Chem Ind Ltd | 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法 |
US20090270299A1 (en) * | 2008-04-23 | 2009-10-29 | Nissan Chemical Industries, Ltd. | Composition for removing protective layer in fabrication of MEMS and method for removing same |
CN102197124B (zh) | 2008-10-21 | 2013-12-18 | 高级技术材料公司 | 铜清洁及保护调配物 |
US8765653B2 (en) | 2009-07-07 | 2014-07-01 | Air Products And Chemicals, Inc. | Formulations and method for post-CMP cleaning |
US8101561B2 (en) | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
US8324114B2 (en) | 2010-05-26 | 2012-12-04 | Lam Research Corporation | Method and apparatus for silicon oxide residue removal |
US20120276714A1 (en) * | 2011-04-28 | 2012-11-01 | Nanya Technology Corporation | Method of oxidizing polysilazane |
US20120288335A1 (en) * | 2011-05-11 | 2012-11-15 | Rodney Green | Soil Stabilization Composition and Methods for Use |
TWI577834B (zh) * | 2011-10-21 | 2017-04-11 | 富士軟片電子材料美國股份有限公司 | 新穎的鈍化組成物及方法 |
US20140329184A1 (en) * | 2011-11-22 | 2014-11-06 | Taminco | Stabilized choline solutions and methods for preparing the same |
KR101261599B1 (ko) | 2012-10-23 | 2013-05-06 | (주)아이리스 | 친환경 장비 세척제 및 이의 제조방법 |
US9058976B2 (en) | 2012-11-06 | 2015-06-16 | International Business Machines Corporation | Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof |
US8647445B1 (en) | 2012-11-06 | 2014-02-11 | International Business Machines Corporation | Process for cleaning semiconductor devices and/or tooling during manufacturing thereof |
KR102227978B1 (ko) * | 2014-05-22 | 2021-03-15 | 삼성전자주식회사 | 전기습윤 소자용 유체 및 이를 이용한 전기습윤 소자 |
JP6363724B2 (ja) * | 2014-10-31 | 2018-07-25 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
KR102456079B1 (ko) * | 2014-12-24 | 2022-11-21 | 삼성디스플레이 주식회사 | 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법 |
TWI629720B (zh) | 2015-09-30 | 2018-07-11 | 東京威力科創股份有限公司 | 用於濕蝕刻製程之溫度的動態控制之方法及設備 |
CN108573856B (zh) * | 2018-04-13 | 2020-09-04 | 深圳市华星光电技术有限公司 | 一种阵列基板的制备方法及清洗液 |
KR20210127183A (ko) * | 2019-02-15 | 2021-10-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
KR20220108107A (ko) * | 2020-04-09 | 2022-08-02 | 쇼와 덴코 가부시키가이샤 | 조성물, 및 접착성 폴리머의 세정 방법 |
KR102503999B1 (ko) * | 2022-11-14 | 2023-02-27 | 강연중 | 질산과 약산을 일정 비율로 포함하여 반도체 설비 챔버하우징의 세정 시 발생하는 질소산화물 가스 발생을 줄이고 오염막을 효과적으로 제거하는 세정제 조성물 |
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-
2003
- 2003-10-21 ES ES03777786T patent/ES2310677T3/es not_active Expired - Lifetime
- 2003-10-21 EP EP03777786A patent/EP1576072B1/de not_active Expired - Lifetime
- 2003-10-21 DE DE60323148T patent/DE60323148D1/de not_active Expired - Lifetime
- 2003-10-21 WO PCT/US2003/033500 patent/WO2004037962A2/en active Application Filing
- 2003-10-21 JP JP2005501654A patent/JP2006503972A/ja active Pending
- 2003-10-21 KR KR1020057007764A patent/KR20050084917A/ko not_active Application Discontinuation
- 2003-10-21 US US10/688,900 patent/US7235188B2/en not_active Expired - Lifetime
- 2003-10-21 AT AT03777786T patent/ATE405622T1/de not_active IP Right Cessation
- 2003-10-21 TW TW092129184A patent/TWI309675B/zh not_active IP Right Cessation
- 2003-10-21 AU AU2003286584A patent/AU2003286584A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU2003286584A1 (en) | 2004-05-13 |
TWI309675B (en) | 2009-05-11 |
ES2310677T3 (es) | 2009-01-16 |
ATE405622T1 (de) | 2008-09-15 |
EP1576072A2 (de) | 2005-09-21 |
EP1576072A4 (de) | 2006-05-17 |
US20040137736A1 (en) | 2004-07-15 |
WO2004037962A2 (en) | 2004-05-06 |
KR20050084917A (ko) | 2005-08-29 |
EP1576072B1 (de) | 2008-08-20 |
US7235188B2 (en) | 2007-06-26 |
AU2003286584A8 (en) | 2004-05-13 |
JP2006503972A (ja) | 2006-02-02 |
TW200420724A (en) | 2004-10-16 |
WO2004037962A3 (en) | 2004-09-23 |
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