TW200802578A - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing methodInfo
- Publication number
- TW200802578A TW200802578A TW96112408A TW96112408A TW200802578A TW 200802578 A TW200802578 A TW 200802578A TW 96112408 A TW96112408 A TW 96112408A TW 96112408 A TW96112408 A TW 96112408A TW 200802578 A TW200802578 A TW 200802578A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- chemical mechanical
- speed
- polishing method
- compound
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 11
- 238000000034 method Methods 0.000 title abstract 3
- 239000000126 substance Substances 0.000 title abstract 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012530 fluid Substances 0.000 abstract 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 abstract 2
- -1 imidazole compound Chemical class 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 241000047703 Nonion Species 0.000 abstract 1
- 239000000084 colloidal system Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
To provide a polishing method of achieving a high polishing speed and low dishing under a low-pressure condition under the chemical mechanical polish. [Solution for Objects] To provide a chemical mechanical polishing method characterized in that while a polishing fluid for metal is supplied to a polishing pad, as the polishing is made by relative motion in the state of polishing pad is contacting the polished surface with the polishing pressure is 1.0 psi or less, the polishing speed is 300 nm/min to 1000 nm/min, and the average friction resistance is 0 to 0.5; wherein the polishing fluid for metal comprises (a) an organic acid selected from the compound expressed by formula (I), (b) colloid silica particle, (c) at least one corrosion inhibitor selected from imidazole compound and triazole compound, (d) non-ion surfactant, and (e) hydrogen peroxide, and having an etching speed of 0 nm/min to 5 nm/min.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006111826A JP5004494B2 (en) | 2006-04-14 | 2006-04-14 | Chemical mechanical polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200802578A true TW200802578A (en) | 2008-01-01 |
Family
ID=38759336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96112408A TW200802578A (en) | 2006-04-14 | 2007-04-10 | Chemical mechanical polishing method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5004494B2 (en) |
| TW (1) | TW200802578A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI447215B (en) * | 2008-03-19 | 2014-08-01 | Fujifilm Corp | Polishing liquid for metal and polishing method using the same |
| CN104745086A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof |
| CN104745088A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4804986B2 (en) * | 2006-03-30 | 2011-11-02 | 富士フイルム株式会社 | Cleaning device for semiconductor device substrate and cleaning method using the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4608196B2 (en) * | 2003-09-30 | 2011-01-05 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP2005175218A (en) * | 2003-12-11 | 2005-06-30 | Nitta Haas Inc | Slurry for polishing copper wiring |
| JP2006093467A (en) * | 2004-09-24 | 2006-04-06 | Fuji Photo Film Co Ltd | Polishing fluid for barrier metal and polishing method |
-
2006
- 2006-04-14 JP JP2006111826A patent/JP5004494B2/en not_active Expired - Fee Related
-
2007
- 2007-04-10 TW TW96112408A patent/TW200802578A/en unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI447215B (en) * | 2008-03-19 | 2014-08-01 | Fujifilm Corp | Polishing liquid for metal and polishing method using the same |
| US9202709B2 (en) | 2008-03-19 | 2015-12-01 | Fujifilm Corporation | Polishing liquid for metal and polishing method using the same |
| CN104745086A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof |
| CN104745088A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof |
| CN104745088B (en) * | 2013-12-25 | 2019-02-15 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid and its application method for barrier layer planarization |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007287832A (en) | 2007-11-01 |
| JP5004494B2 (en) | 2012-08-22 |
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