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FR2779870B1 - Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procede pour la fabrication de ce detecteur et de cette photodiode - Google Patents

Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procede pour la fabrication de ce detecteur et de cette photodiode

Info

Publication number
FR2779870B1
FR2779870B1 FR9910601A FR9910601A FR2779870B1 FR 2779870 B1 FR2779870 B1 FR 2779870B1 FR 9910601 A FR9910601 A FR 9910601A FR 9910601 A FR9910601 A FR 9910601A FR 2779870 B1 FR2779870 B1 FR 2779870B1
Authority
FR
France
Prior art keywords
detector
photodiode
manufacturing
type
cmos image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9910601A
Other languages
English (en)
Other versions
FR2779870A1 (fr
Inventor
Yang Woodward
Ju Il Lee
Nan Yi Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19534037&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2779870(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of FR2779870A1 publication Critical patent/FR2779870A1/fr
Application granted granted Critical
Publication of FR2779870B1 publication Critical patent/FR2779870B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
FR9910601A 1998-02-28 1999-08-18 Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procede pour la fabrication de ce detecteur et de cette photodiode Expired - Lifetime FR2779870B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980006687 1998-02-28

Publications (2)

Publication Number Publication Date
FR2779870A1 FR2779870A1 (fr) 1999-12-17
FR2779870B1 true FR2779870B1 (fr) 2005-05-13

Family

ID=19534037

Family Applications (2)

Application Number Title Priority Date Filing Date
FR9902509A Expired - Lifetime FR2775541B1 (fr) 1998-02-28 1999-03-01 Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procedes pour la fabrication de ce detecteur et de cette photodiode
FR9910601A Expired - Lifetime FR2779870B1 (fr) 1998-02-28 1999-08-18 Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procede pour la fabrication de ce detecteur et de cette photodiode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR9902509A Expired - Lifetime FR2775541B1 (fr) 1998-02-28 1999-03-01 Detecteur d'images cmos, photodiode pour un detecteur de ce type, et procedes pour la fabrication de ce detecteur et de cette photodiode

Country Status (9)

Country Link
US (2) US6184055B1 (fr)
JP (1) JP4390896B2 (fr)
KR (1) KR100278285B1 (fr)
CN (2) CN1171315C (fr)
DE (1) DE19908457B4 (fr)
FR (2) FR2775541B1 (fr)
GB (1) GB2334817B (fr)
NL (2) NL1011381C2 (fr)
TW (1) TW457644B (fr)

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FR2779870A1 (fr) 1999-12-17
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