FR2774774B1
(fr)
*
|
1998-02-11 |
2000-03-03 |
Commissariat Energie Atomique |
Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance
|
US6195240B1
(en)
*
|
1998-07-31 |
2001-02-27 |
International Business Machines Corporation |
Spin valve head with diffusion barrier
|
US6252796B1
(en)
*
|
1998-08-14 |
2001-06-26 |
U.S. Philips Corporation |
Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
|
US6219212B1
(en)
|
1998-09-08 |
2001-04-17 |
International Business Machines Corporation |
Magnetic tunnel junction head structure with insulating antiferromagnetic layer
|
JP2000113421A
(ja)
*
|
1998-10-08 |
2000-04-21 |
Hitachi Ltd |
磁気トンネル接合磁気抵抗ヘッド
|
US6185079B1
(en)
|
1998-11-09 |
2001-02-06 |
International Business Machines Corporation |
Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor
|
JP2000208831A
(ja)
*
|
1999-01-18 |
2000-07-28 |
Sony Corp |
磁気抵抗素子及びこれを用いた磁気デバイス
|
FR2791814A1
(fr)
*
|
1999-03-31 |
2000-10-06 |
Univ Pasteur |
Dispositif microelectronique a jonctions tunnel et reseau de memoires et capteur comprenant de tels dispositifs
|
US6889555B1
(en)
*
|
1999-07-20 |
2005-05-10 |
Fidelica Microsystems, Inc. |
Magnetoresistive semiconductor pressure sensors and fingerprint identification/verification sensors using same
|
US6694822B1
(en)
*
|
1999-07-20 |
2004-02-24 |
Fidelica Microsystems, Inc. |
Use of multi-layer thin films as stress sensor
|
US6275363B1
(en)
*
|
1999-07-23 |
2001-08-14 |
International Business Machines Corporation |
Read head with dual tunnel junction sensor
|
DE10036356C2
(de)
*
|
1999-08-10 |
2002-03-14 |
Inst Physikalische Hochtech Ev |
Magnetisches Dünnschichtbauelement
|
US6611405B1
(en)
*
|
1999-09-16 |
2003-08-26 |
Kabushiki Kaisha Toshiba |
Magnetoresistive element and magnetic memory device
|
US6875621B2
(en)
*
|
1999-10-13 |
2005-04-05 |
Nve Corporation |
Magnetizable bead detector
|
US6743639B1
(en)
|
1999-10-13 |
2004-06-01 |
Nve Corporation |
Magnetizable bead detector
|
WO2001027592A1
(fr)
*
|
1999-10-13 |
2001-04-19 |
Nve Corporation |
Detecteur de perles magnetisables
|
DE19949714A1
(de)
*
|
1999-10-15 |
2001-04-26 |
Bosch Gmbh Robert |
Magnetisch sensitives Bauteil, insbesondere Sensorelement, mit magnetoresistiven Schichtsystemen in Brückenschaltung
|
DE10031401C2
(de)
*
|
2000-07-03 |
2002-05-29 |
Forschungszentrum Juelich Gmbh |
Dreitorbauelement, insbesondere Spininjektionstransistor
|
US6538921B2
(en)
|
2000-08-17 |
2003-03-25 |
Nve Corporation |
Circuit selection of magnetic memory cells and related cell structures
|
JP4693292B2
(ja)
*
|
2000-09-11 |
2011-06-01 |
株式会社東芝 |
強磁性トンネル接合素子およびその製造方法
|
EP1325572A2
(fr)
*
|
2000-10-10 |
2003-07-09 |
Gentech Investment Group AG. |
Appareil de communications
|
EP1345277A4
(fr)
*
|
2000-12-21 |
2005-02-16 |
Fujitsu Ltd |
Dispositif magnetoresistant, tete magnetique et lecteur de disque magnetique
|
DE10105894A1
(de)
*
|
2001-02-09 |
2002-09-05 |
Bosch Gmbh Robert |
Magnetisch sensitive Schichtanordnung
|
US6674664B2
(en)
|
2001-05-07 |
2004-01-06 |
Nve Corporation |
Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells
|
US6744086B2
(en)
|
2001-05-15 |
2004-06-01 |
Nve Corporation |
Current switched magnetoresistive memory cell
|
US6777730B2
(en)
*
|
2001-08-31 |
2004-08-17 |
Nve Corporation |
Antiparallel magnetoresistive memory cells
|
JP3793725B2
(ja)
*
|
2002-01-25 |
2006-07-05 |
アルプス電気株式会社 |
磁気検出素子及びその製造方法並びに前記磁気検出素子を用いた磁気検出装置
|
US6600184B1
(en)
|
2002-03-25 |
2003-07-29 |
International Business Machines Corporation |
System and method for improving magnetic tunnel junction sensor magnetoresistance
|
US6739132B2
(en)
|
2002-04-30 |
2004-05-25 |
Adc Telecommunications, Inc. |
Thermal micro-actuator based on selective electrical excitation
|
US7230804B2
(en)
*
|
2003-05-02 |
2007-06-12 |
Hitachi Global Storage Technologies Netherlands B.V. |
Method and apparatus for providing a magnetic tunnel transistor with a self-pinned emitter
|
US7916435B1
(en)
|
2003-05-02 |
2011-03-29 |
Hitachi Global Storage Technologies Netherlands B.V. |
Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer
|
US6762954B1
(en)
*
|
2003-05-09 |
2004-07-13 |
Alan S. Edelstein |
Local probe of magnetic properties
|
JP4082274B2
(ja)
*
|
2003-05-22 |
2008-04-30 |
株式会社日立製作所 |
磁気センサ及びそれを備える磁気ヘッド
|
US7573737B2
(en)
|
2003-08-19 |
2009-08-11 |
New York University |
High speed low power magnetic devices based on current induced spin-momentum transfer
|
US7911832B2
(en)
|
2003-08-19 |
2011-03-22 |
New York University |
High speed low power magnetic devices based on current induced spin-momentum transfer
|
US8755222B2
(en)
|
2003-08-19 |
2014-06-17 |
New York University |
Bipolar spin-transfer switching
|
US6980469B2
(en)
*
|
2003-08-19 |
2005-12-27 |
New York University |
High speed low power magnetic devices based on current induced spin-momentum transfer
|
JP2005109263A
(ja)
*
|
2003-09-30 |
2005-04-21 |
Toshiba Corp |
磁性体素子及磁気メモリ
|
JP4433820B2
(ja)
*
|
2004-02-20 |
2010-03-17 |
Tdk株式会社 |
磁気検出素子およびその形成方法ならびに磁気センサ、電流計
|
US7576956B2
(en)
*
|
2004-07-26 |
2009-08-18 |
Grandis Inc. |
Magnetic tunnel junction having diffusion stop layer
|
US7233142B1
(en)
|
2004-09-02 |
2007-06-19 |
United States Of America As Represented By The Secretary Of The Army |
Planer reader of non-erasable magnetic media and local permeability
|
US7391091B2
(en)
*
|
2004-09-29 |
2008-06-24 |
Nve Corporation |
Magnetic particle flow detector
|
JP4179260B2
(ja)
*
|
2004-09-29 |
2008-11-12 |
ソニー株式会社 |
磁気抵抗効果型磁気ヘッド及び磁気テープ装置
|
JP2006286102A
(ja)
*
|
2005-03-31 |
2006-10-19 |
Fujitsu Ltd |
スピンバルブ抵抗効果素子の評価方法、磁気ヘッドの製造方法、および磁気記憶装置
|
US7777261B2
(en)
*
|
2005-09-20 |
2010-08-17 |
Grandis Inc. |
Magnetic device having stabilized free ferromagnetic layer
|
US7973349B2
(en)
*
|
2005-09-20 |
2011-07-05 |
Grandis Inc. |
Magnetic device having multilayered free ferromagnetic layer
|
US8072711B1
(en)
*
|
2006-08-02 |
2011-12-06 |
Jian-Qing Wang |
System and method for the fabrication, characterization and use of magnetic corrosion and chemical sensors
|
JP4458103B2
(ja)
*
|
2007-02-27 |
2010-04-28 |
Tdk株式会社 |
磁気センサ、磁気方位センサ、磁界検出方法および磁気方位検出方法
|
WO2008114615A1
(fr)
*
|
2007-03-20 |
2008-09-25 |
Alps Electric Co., Ltd. |
Dispositif de détection de position employant un élément à effet magnétorésistif
|
US7957179B2
(en)
*
|
2007-06-27 |
2011-06-07 |
Grandis Inc. |
Magnetic shielding in magnetic multilayer structures
|
US9812184B2
(en)
|
2007-10-31 |
2017-11-07 |
New York University |
Current induced spin-momentum transfer stack with dual insulating layers
|
JP2009301598A
(ja)
*
|
2008-06-10 |
2009-12-24 |
Hitachi Ltd |
磁気記録再生ヘッド
|
US7894248B2
(en)
|
2008-09-12 |
2011-02-22 |
Grandis Inc. |
Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
|
US9082950B2
(en)
|
2012-10-17 |
2015-07-14 |
New York University |
Increased magnetoresistance in an inverted orthogonal spin transfer layer stack
|
US9082888B2
(en)
|
2012-10-17 |
2015-07-14 |
New York University |
Inverted orthogonal spin transfer layer stack
|
US8982613B2
(en)
|
2013-06-17 |
2015-03-17 |
New York University |
Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
|
US9263667B1
(en)
|
2014-07-25 |
2016-02-16 |
Spin Transfer Technologies, Inc. |
Method for manufacturing MTJ memory device
|
US9337412B2
(en)
|
2014-09-22 |
2016-05-10 |
Spin Transfer Technologies, Inc. |
Magnetic tunnel junction structure for MRAM device
|
US9728712B2
(en)
|
2015-04-21 |
2017-08-08 |
Spin Transfer Technologies, Inc. |
Spin transfer torque structure for MRAM devices having a spin current injection capping layer
|
US10468590B2
(en)
|
2015-04-21 |
2019-11-05 |
Spin Memory, Inc. |
High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
|
US9853206B2
(en)
|
2015-06-16 |
2017-12-26 |
Spin Transfer Technologies, Inc. |
Precessional spin current structure for MRAM
|
US9773974B2
(en)
|
2015-07-30 |
2017-09-26 |
Spin Transfer Technologies, Inc. |
Polishing stop layer(s) for processing arrays of semiconductor elements
|
US10163479B2
(en)
|
2015-08-14 |
2018-12-25 |
Spin Transfer Technologies, Inc. |
Method and apparatus for bipolar memory write-verify
|
US9741926B1
(en)
|
2016-01-28 |
2017-08-22 |
Spin Transfer Technologies, Inc. |
Memory cell having magnetic tunnel junction and thermal stability enhancement layer
|
US10628316B2
(en)
|
2016-09-27 |
2020-04-21 |
Spin Memory, Inc. |
Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register
|
US10546625B2
(en)
|
2016-09-27 |
2020-01-28 |
Spin Memory, Inc. |
Method of optimizing write voltage based on error buffer occupancy
|
US10446210B2
(en)
|
2016-09-27 |
2019-10-15 |
Spin Memory, Inc. |
Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers
|
US10460781B2
(en)
|
2016-09-27 |
2019-10-29 |
Spin Memory, Inc. |
Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank
|
US10818331B2
(en)
|
2016-09-27 |
2020-10-27 |
Spin Memory, Inc. |
Multi-chip module for MRAM devices with levels of dynamic redundancy registers
|
US10366774B2
(en)
|
2016-09-27 |
2019-07-30 |
Spin Memory, Inc. |
Device with dynamic redundancy registers
|
US10437723B2
(en)
|
2016-09-27 |
2019-10-08 |
Spin Memory, Inc. |
Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device
|
US11119910B2
(en)
|
2016-09-27 |
2021-09-14 |
Spin Memory, Inc. |
Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments
|
US10437491B2
(en)
|
2016-09-27 |
2019-10-08 |
Spin Memory, Inc. |
Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register
|
US11151042B2
(en)
|
2016-09-27 |
2021-10-19 |
Integrated Silicon Solution, (Cayman) Inc. |
Error cache segmentation for power reduction
|
US10360964B2
(en)
|
2016-09-27 |
2019-07-23 |
Spin Memory, Inc. |
Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device
|
US10991410B2
(en)
|
2016-09-27 |
2021-04-27 |
Spin Memory, Inc. |
Bi-polar write scheme
|
US11119936B2
(en)
|
2016-09-27 |
2021-09-14 |
Spin Memory, Inc. |
Error cache system with coarse and fine segments for power optimization
|
US10665777B2
(en)
|
2017-02-28 |
2020-05-26 |
Spin Memory, Inc. |
Precessional spin current structure with non-magnetic insertion layer for MRAM
|
US10672976B2
(en)
|
2017-02-28 |
2020-06-02 |
Spin Memory, Inc. |
Precessional spin current structure with high in-plane magnetization for MRAM
|
US10816615B2
(en)
|
2017-05-19 |
2020-10-27 |
Asahi Kasei Microdevices Corporation |
Magnetic sensor
|
US10032978B1
(en)
|
2017-06-27 |
2018-07-24 |
Spin Transfer Technologies, Inc. |
MRAM with reduced stray magnetic fields
|
US10656994B2
(en)
|
2017-10-24 |
2020-05-19 |
Spin Memory, Inc. |
Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques
|
US10489245B2
(en)
|
2017-10-24 |
2019-11-26 |
Spin Memory, Inc. |
Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them
|
US10529439B2
(en)
|
2017-10-24 |
2020-01-07 |
Spin Memory, Inc. |
On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects
|
US10481976B2
(en)
|
2017-10-24 |
2019-11-19 |
Spin Memory, Inc. |
Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers
|
US10679685B2
(en)
|
2017-12-27 |
2020-06-09 |
Spin Memory, Inc. |
Shared bit line array architecture for magnetoresistive memory
|
US10395712B2
(en)
|
2017-12-28 |
2019-08-27 |
Spin Memory, Inc. |
Memory array with horizontal source line and sacrificial bitline per virtual source
|
US10891997B2
(en)
|
2017-12-28 |
2021-01-12 |
Spin Memory, Inc. |
Memory array with horizontal source line and a virtual source line
|
US10360962B1
(en)
|
2017-12-28 |
2019-07-23 |
Spin Memory, Inc. |
Memory array with individually trimmable sense amplifiers
|
US10516094B2
(en)
|
2017-12-28 |
2019-12-24 |
Spin Memory, Inc. |
Process for creating dense pillars using multiple exposures for MRAM fabrication
|
US10395711B2
(en)
|
2017-12-28 |
2019-08-27 |
Spin Memory, Inc. |
Perpendicular source and bit lines for an MRAM array
|
US10424726B2
(en)
|
2017-12-28 |
2019-09-24 |
Spin Memory, Inc. |
Process for improving photoresist pillar adhesion during MRAM fabrication
|
US10811594B2
(en)
|
2017-12-28 |
2020-10-20 |
Spin Memory, Inc. |
Process for hard mask development for MRAM pillar formation using photolithography
|
US10840436B2
(en)
|
2017-12-29 |
2020-11-17 |
Spin Memory, Inc. |
Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
|
US10886330B2
(en)
|
2017-12-29 |
2021-01-05 |
Spin Memory, Inc. |
Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch
|
US10236047B1
(en)
|
2017-12-29 |
2019-03-19 |
Spin Memory, Inc. |
Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
|
US10546624B2
(en)
|
2017-12-29 |
2020-01-28 |
Spin Memory, Inc. |
Multi-port random access memory
|
US10360961B1
(en)
|
2017-12-29 |
2019-07-23 |
Spin Memory, Inc. |
AC current pre-charge write-assist in orthogonal STT-MRAM
|
US10199083B1
(en)
|
2017-12-29 |
2019-02-05 |
Spin Transfer Technologies, Inc. |
Three-terminal MRAM with ac write-assist for low read disturb
|
US10840439B2
(en)
|
2017-12-29 |
2020-11-17 |
Spin Memory, Inc. |
Magnetic tunnel junction (MTJ) fabrication methods and systems
|
US10424723B2
(en)
|
2017-12-29 |
2019-09-24 |
Spin Memory, Inc. |
Magnetic tunnel junction devices including an optimization layer
|
US10784439B2
(en)
|
2017-12-29 |
2020-09-22 |
Spin Memory, Inc. |
Precessional spin current magnetic tunnel junction devices and methods of manufacture
|
US10270027B1
(en)
|
2017-12-29 |
2019-04-23 |
Spin Memory, Inc. |
Self-generating AC current assist in orthogonal STT-MRAM
|
US10367139B2
(en)
|
2017-12-29 |
2019-07-30 |
Spin Memory, Inc. |
Methods of manufacturing magnetic tunnel junction devices
|
US10236048B1
(en)
|
2017-12-29 |
2019-03-19 |
Spin Memory, Inc. |
AC current write-assist in orthogonal STT-MRAM
|
US10339993B1
(en)
|
2017-12-30 |
2019-07-02 |
Spin Memory, Inc. |
Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
|
US10141499B1
(en)
|
2017-12-30 |
2018-11-27 |
Spin Transfer Technologies, Inc. |
Perpendicular magnetic tunnel junction device with offset precessional spin current layer
|
US10319900B1
(en)
|
2017-12-30 |
2019-06-11 |
Spin Memory, Inc. |
Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density
|
US10255962B1
(en)
|
2017-12-30 |
2019-04-09 |
Spin Memory, Inc. |
Microwave write-assist in orthogonal STT-MRAM
|
US10229724B1
(en)
|
2017-12-30 |
2019-03-12 |
Spin Memory, Inc. |
Microwave write-assist in series-interconnected orthogonal STT-MRAM devices
|
US10236439B1
(en)
|
2017-12-30 |
2019-03-19 |
Spin Memory, Inc. |
Switching and stability control for perpendicular magnetic tunnel junction device
|
US10468588B2
(en)
|
2018-01-05 |
2019-11-05 |
Spin Memory, Inc. |
Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
|
US10438995B2
(en)
|
2018-01-08 |
2019-10-08 |
Spin Memory, Inc. |
Devices including magnetic tunnel junctions integrated with selectors
|
US10438996B2
(en)
|
2018-01-08 |
2019-10-08 |
Spin Memory, Inc. |
Methods of fabricating magnetic tunnel junctions integrated with selectors
|
JP6759260B2
(ja)
*
|
2018-03-01 |
2020-09-23 |
株式会社東芝 |
磁気ヘッド及び磁気記録再生装置
|
US10388861B1
(en)
|
2018-03-08 |
2019-08-20 |
Spin Memory, Inc. |
Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
|
US10446744B2
(en)
|
2018-03-08 |
2019-10-15 |
Spin Memory, Inc. |
Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
|
US11107974B2
(en)
|
2018-03-23 |
2021-08-31 |
Spin Memory, Inc. |
Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer
|
US10784437B2
(en)
|
2018-03-23 |
2020-09-22 |
Spin Memory, Inc. |
Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
|
US11107978B2
(en)
|
2018-03-23 |
2021-08-31 |
Spin Memory, Inc. |
Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
|
US20190296220A1
(en)
|
2018-03-23 |
2019-09-26 |
Spin Transfer Technologies, Inc. |
Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer
|
US10411185B1
(en)
|
2018-05-30 |
2019-09-10 |
Spin Memory, Inc. |
Process for creating a high density magnetic tunnel junction array test platform
|
US10600478B2
(en)
|
2018-07-06 |
2020-03-24 |
Spin Memory, Inc. |
Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
|
US10559338B2
(en)
|
2018-07-06 |
2020-02-11 |
Spin Memory, Inc. |
Multi-bit cell read-out techniques
|
US10692569B2
(en)
|
2018-07-06 |
2020-06-23 |
Spin Memory, Inc. |
Read-out techniques for multi-bit cells
|
US10593396B2
(en)
|
2018-07-06 |
2020-03-17 |
Spin Memory, Inc. |
Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
|
US10650875B2
(en)
|
2018-08-21 |
2020-05-12 |
Spin Memory, Inc. |
System for a wide temperature range nonvolatile memory
|
US10699761B2
(en)
|
2018-09-18 |
2020-06-30 |
Spin Memory, Inc. |
Word line decoder memory architecture
|
US11621293B2
(en)
|
2018-10-01 |
2023-04-04 |
Integrated Silicon Solution, (Cayman) Inc. |
Multi terminal device stack systems and methods
|
US10971680B2
(en)
|
2018-10-01 |
2021-04-06 |
Spin Memory, Inc. |
Multi terminal device stack formation methods
|
US10580827B1
(en)
|
2018-11-16 |
2020-03-03 |
Spin Memory, Inc. |
Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
|
US11107979B2
(en)
|
2018-12-28 |
2021-08-31 |
Spin Memory, Inc. |
Patterned silicide structures and methods of manufacture
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