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FR2589281B1 - Dispositif a laser semiconducteur et son procede de fabrication - Google Patents

Dispositif a laser semiconducteur et son procede de fabrication

Info

Publication number
FR2589281B1
FR2589281B1 FR868614700A FR8614700A FR2589281B1 FR 2589281 B1 FR2589281 B1 FR 2589281B1 FR 868614700 A FR868614700 A FR 868614700A FR 8614700 A FR8614700 A FR 8614700A FR 2589281 B1 FR2589281 B1 FR 2589281B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR868614700A
Other languages
English (en)
Other versions
FR2589281A1 (fr
Inventor
Toshiro Hayakawa
Takahiro Suyama
Masafumi Kondo
Kohsei Takahashi
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of FR2589281A1 publication Critical patent/FR2589281A1/fr
Application granted granted Critical
Publication of FR2589281B1 publication Critical patent/FR2589281B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR868614700A 1985-10-24 1986-10-23 Dispositif a laser semiconducteur et son procede de fabrication Expired - Lifetime FR2589281B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60240162A JPS6298690A (ja) 1985-10-24 1985-10-24 半導体レ−ザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
FR2589281A1 FR2589281A1 (fr) 1987-04-30
FR2589281B1 true FR2589281B1 (fr) 1990-09-28

Family

ID=17055416

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868614700A Expired - Lifetime FR2589281B1 (fr) 1985-10-24 1986-10-23 Dispositif a laser semiconducteur et son procede de fabrication

Country Status (5)

Country Link
US (1) US4841533A (fr)
JP (1) JPS6298690A (fr)
KR (1) KR910004168B1 (fr)
FR (1) FR2589281B1 (fr)
GB (1) GB2182492B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62193192A (ja) * 1986-02-19 1987-08-25 Sharp Corp 半導体レ−ザ素子
DE3840717A1 (de) * 1988-12-02 1990-06-07 Max Planck Gesellschaft Lichtemittierendes bauelement aus verbindungs-halbleiter
JPH02174178A (ja) * 1988-12-26 1990-07-05 Sharp Corp 半導体レーザ素子
US5075743A (en) * 1989-06-06 1991-12-24 Cornell Research Foundation, Inc. Quantum well optical device on silicon
US5012301A (en) * 1990-02-22 1991-04-30 Northern Telecom Limited Three terminal semiconductor device
US5327445A (en) * 1990-09-12 1994-07-05 The Furukawa Electric Co., Ltd. Quantum-well type semiconductor laser device
US5210428A (en) * 1991-11-01 1993-05-11 At&T Bell Laboratories Semiconductor device having shallow quantum well region
US5329134A (en) * 1992-01-10 1994-07-12 International Business Machines Corporation Superluminescent diode having a quantum well and cavity length dependent threshold current
JPH05235470A (ja) * 1992-02-24 1993-09-10 Eastman Kodak Japan Kk レーザダイオード
US5218613A (en) * 1992-05-01 1993-06-08 Mcdonnell Douglas Corporation Visible diode laser

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104189A (ja) * 1982-12-07 1984-06-15 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
US4512022A (en) * 1982-07-13 1985-04-16 At&T Bell Laboratories Semiconductor laser having graded index waveguide
JPS5929484A (ja) * 1982-08-12 1984-02-16 Fujitsu Ltd 半導体発光装置
US4616241A (en) * 1983-03-22 1986-10-07 The United States Of America As Represented By The United States Department Of Energy Superlattice optical device
US4599728A (en) * 1983-07-11 1986-07-08 At&T Bell Laboratories Multi-quantum well laser emitting at 1.5 μm
JPS6072283A (ja) * 1983-09-28 1985-04-24 Fujitsu Ltd 半導体発光装置
JPH0632339B2 (ja) * 1984-12-18 1994-04-27 キヤノン株式会社 半導体レ−ザ

Also Published As

Publication number Publication date
KR870004541A (ko) 1987-05-11
GB2182492A (en) 1987-05-13
JPS6298690A (ja) 1987-05-08
FR2589281A1 (fr) 1987-04-30
GB8625439D0 (en) 1986-11-26
GB2182492B (en) 1989-04-26
KR910004168B1 (ko) 1991-06-22
US4841533A (en) 1989-06-20

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Legal Events

Date Code Title Description
ST Notification of lapse