FR2650122B1 - Dispositif semi-conducteur a haute tension et son procede de fabrication - Google Patents

Dispositif semi-conducteur a haute tension et son procede de fabrication

Info

Publication number: FR2650122B1
Authority: FR; France
Prior art keywords: manufacturing; semiconductor device; high voltage; voltage semiconductor; voltage
Prior art date: 1989-07-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

FR8909897A

Other languages

English (en)

Other versions

FR2650122A1 (fr

Inventor

Denis Jaume

Andre Peyre Lavigne

Georges Charitat

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Freescale Semiconducteurs France SAS

Original Assignee

Motorola Semiconducteurs SA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-07-21

Filing date

1989-07-21

Publication date

1991-11-08

1989-07-21 Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA

1989-07-21 Priority to FR8909897A priority Critical patent/FR2650122B1/fr

1990-05-25 Priority to ES90109951T priority patent/ES2064524T3/es

1990-05-25 Priority to DE69014454T priority patent/DE69014454T2/de

1990-05-25 Priority to EP90109951A priority patent/EP0408868B1/fr

1990-07-16 Priority to KR1019900010798A priority patent/KR940002768B1/ko

1990-07-20 Priority to JP2190907A priority patent/JP2580850B2/ja

1990-07-20 Priority to CA002021671A priority patent/CA2021671C/fr

1990-07-20 Priority to MYPI90001220A priority patent/MY105940A/en

1990-12-24 Priority to US07/630,804 priority patent/US5060047A/en

1991-01-25 Publication of FR2650122A1 publication Critical patent/FR2650122A1/fr

1991-11-08 Application granted granted Critical

1991-11-08 Publication of FR2650122B1 publication Critical patent/FR2650122B1/fr

2009-07-21 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges

FR8909897A 1989-07-21 1989-07-21 Dispositif semi-conducteur a haute tension et son procede de fabrication Expired - Lifetime FR2650122B1 (fr)

Priority Applications (9)

Application Number	Priority Date	Filing Date	Title
FR8909897A FR2650122B1 (fr)	1989-07-21	1989-07-21	Dispositif semi-conducteur a haute tension et son procede de fabrication
DE69014454T DE69014454T2 (de)	1989-07-21	1990-05-25	Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung.
EP90109951A EP0408868B1 (fr)	1989-07-21	1990-05-25	Dispositif semi-conducteur haute tension et procédé de fabrication
ES90109951T ES2064524T3 (es)	1989-07-21	1990-05-25	Dispositivo semiconductor de alto voltaje y proceso de fabricacion.
KR1019900010798A KR940002768B1 (ko)	1989-07-21	1990-07-16	고전압 반도체 장치 및 그의 제조 공정
JP2190907A JP2580850B2 (ja)	1989-07-21	1990-07-20	高電圧半導体デバイスとその製造方法
CA002021671A CA2021671C (fr)	1989-07-21	1990-07-20	Semiconducteur haute tension et procede de fabrication
MYPI90001220A MY105940A (en)	1989-07-21	1990-07-20	High voltage semiconductor device and fabrication process.
US07/630,804 US5060047A (en)	1989-07-21	1990-12-24	High voltage semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR8909897A FR2650122B1 (fr)	1989-07-21	1989-07-21	Dispositif semi-conducteur a haute tension et son procede de fabrication

Publications (2)

Publication Number	Publication Date
FR2650122A1 FR2650122A1 (fr)	1991-01-25
FR2650122B1 true FR2650122B1 (fr)	1991-11-08

Family

ID=9384046

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR8909897A Expired - Lifetime FR2650122B1 (fr)	1989-07-21	1989-07-21	Dispositif semi-conducteur a haute tension et son procede de fabrication

Country Status (9)

Country	Link
US (1)	US5060047A (fr)
EP (1)	EP0408868B1 (fr)
JP (1)	JP2580850B2 (fr)
KR (1)	KR940002768B1 (fr)
CA (1)	CA2021671C (fr)
DE (1)	DE69014454T2 (fr)
ES (1)	ES2064524T3 (fr)
FR (1)	FR2650122B1 (fr)
MY (1)	MY105940A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2666174B1 (fr) *	1990-08-21	1997-03-21	Sgs Thomson Microelectronics	Composant semiconducteur haute tension a faible courant de fuite.
US5374843A (en) *	1991-05-06	1994-12-20	Silinconix, Inc.	Lightly-doped drain MOSFET with improved breakdown characteristics
JPH0799307A (ja) *	1993-09-29	1995-04-11	Fuji Electric Co Ltd	半導体装置およびその製造方法
US6489213B1 (en) *	1996-01-05	2002-12-03	Integrated Device Technology, Inc.	Method for manufacturing semiconductor device containing a silicon-rich layer
US5677562A (en) *	1996-05-14	1997-10-14	General Instrument Corporation Of Delaware	Planar P-N junction semiconductor structure with multilayer passivation
KR19990024988A (ko) *	1997-09-09	1999-04-06	윤종용	반절연 폴리실리콘막을 이용한 전력 반도체장치의 제조방법
KR100297703B1 (ko) *	1998-02-24	2001-08-07	김덕중	반절연폴리실리콘(sipos)을이용한전력반도체장치및그제조방법
EP0977264B1 (fr) *	1998-07-31	2006-04-26	Freescale Semiconductor, Inc.	Structure semiconductrice pour circuit d'attaque avec décalage de niveau
KR100343151B1 (ko)	1999-10-28	2002-07-05	김덕중	Ｓｉｐｏｓ를 이용한 고전압 반도체소자 및 그 제조방법
JP2007507877A (ja) *	2003-09-30	2007-03-29	コーニンクレッカフィリップスエレクトロニクスエヌヴィ	絶縁された金属領域を備えたフィールドプレートを有する横方向薄膜ｓｏｉデバイス
US7279390B2 (en) *	2005-03-21	2007-10-09	Semiconductor Components Industries, L.L.C.	Schottky diode and method of manufacture
US7820473B2 (en) *	2005-03-21	2010-10-26	Semiconductor Components Industries, Llc	Schottky diode and method of manufacture
US7821095B2 (en) *	2006-07-14	2010-10-26	Semiconductor Components Industries, Llc	Method of forming a Schottky diode and structure therefor
US8884378B2 (en) *	2010-11-03	2014-11-11	Infineon Technologies Ag	Semiconductor device and a method for manufacturing a semiconductor device
CN103021801B (zh) *	2011-09-22	2015-07-15	北大方正集团有限公司	掺氧半绝缘多晶硅膜及其制作方法
CN106783608B (zh) *	2016-12-22	2019-10-25	株洲中车时代电气股份有限公司	一种终端结构及其制作方法和功率半导体器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4979782A (fr) *	1972-12-08	1974-08-01
NL186665C (nl) *	1980-03-10	1992-01-16	Philips Nv	Halfgeleiderinrichting.
JPS56131954A (en) *	1980-03-19	1981-10-15	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor device
JPS577959A (en) *	1980-06-19	1982-01-16	Toshiba Corp	Semiconductor device
JPS5853860A (ja) *	1981-09-26	1983-03-30	Toshiba Corp	高耐圧プレ−ナ型半導体装置
JPS5934638A (ja) *	1982-08-20	1984-02-25	Matsushita Electronics Corp	半導体装置
US4583106A (en) *	1983-08-04	1986-04-15	International Business Machines Corporation	Fabrication methods for high performance lateral bipolar transistors
US4647958A (en) *	1984-04-16	1987-03-03	Trw Inc.	Bipolar transistor construction
JPS6276673A (ja) *	1985-09-30	1987-04-08	Toshiba Corp	高耐圧半導体装置
IT1202311B (it) *	1985-12-11	1989-02-02	Sgs Microelettronica Spa	Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
JPS63184364A (ja) *	1987-01-27	1988-07-29	Toshiba Corp	半導体装置の製造方法
USH665H (en) *	1987-10-19	1989-08-01	Bell Telephone Laboratories, Incorporated	Resistive field shields for high voltage devices

1989
- 1989-07-21 FR FR8909897A patent/FR2650122B1/fr not_active Expired - Lifetime
1990
- 1990-05-25 ES ES90109951T patent/ES2064524T3/es not_active Expired - Lifetime
- 1990-05-25 DE DE69014454T patent/DE69014454T2/de not_active Expired - Fee Related
- 1990-05-25 EP EP90109951A patent/EP0408868B1/fr not_active Expired - Lifetime
- 1990-07-16 KR KR1019900010798A patent/KR940002768B1/ko not_active IP Right Cessation
- 1990-07-20 MY MYPI90001220A patent/MY105940A/en unknown
- 1990-07-20 JP JP2190907A patent/JP2580850B2/ja not_active Expired - Lifetime
- 1990-07-20 CA CA002021671A patent/CA2021671C/fr not_active Expired - Fee Related
- 1990-12-24 US US07/630,804 patent/US5060047A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US5060047A (en)	1991-10-22
ES2064524T3 (es)	1995-02-01
EP0408868B1 (fr)	1994-11-30
DE69014454D1 (de)	1995-01-12
MY105940A (en)	1995-02-28
CA2021671A1 (fr)	1991-01-22
JPH0358429A (ja)	1991-03-13
FR2650122A1 (fr)	1991-01-25
JP2580850B2 (ja)	1997-02-12
CA2021671C (fr)	1993-11-02
EP0408868A3 (en)	1991-03-20
KR910003829A (ko)	1991-02-28
KR940002768B1 (ko)	1994-04-02
EP0408868A2 (fr)	1991-01-23
DE69014454T2 (de)	1995-06-22

Publication	Publication Date	Title
FR2559958B1 (fr)	1988-08-05	Dispositif semi-conducteur metal-oxyde a effet de champ et son procede de fabrication
FR2604562B1 (fr)	1991-09-27	Dispositif semi-conducteur silicium-sur-isolant et procede de fabrication
EP0608503A3 (fr)	1995-05-24	Dispositif semi-conducteur et son procédé de fabrication.
FR2650122B1 (fr)	1991-11-08	Dispositif semi-conducteur a haute tension et son procede de fabrication
EP0700087A3 (fr)	1997-01-08	Dispositif semi-conducteur et procédé de fabrication
KR910008793A (ko)	1991-05-31	반도체장치 및 그 제조방법
FR2638898B1 (fr)	1991-04-12	Dispositif a semiconducteurs a structure empilee et procede de fabrication
DE69029630D1 (de)	1997-02-20	Mehrfach umhüllte Halbleiteranordnung und Herstellungsverfahren dafür
FR2512241B1 (fr)	1985-12-06	Dispositif electro-optique a haute fiabilite et son procede de fabrication
KR900012335A (ko)	1990-08-03	반도체장치의 제조방법
EP0139019A4 (fr)	1985-12-02	Dispositif semiconducteur et son procede de fabrication.
FR2724489B1 (fr)	1998-09-25	Dispositif a semiconducteur et son procede de fabrication
KR900015300A (ko)	1990-10-26	반도체장치의 제조방법
FR2606223B1 (fr)	1996-03-01	Laser a semiconducteur et son procede de fabrication
EP0645820A3 (fr)	1996-07-31	Dispositif à semi-conducteur et son procédé de fabrication.
EP0862222A4 (fr)	1999-12-01	Dispositif a semi-conducteurs et procede de fabrication
KR900019176A (ko)	1990-12-24	반도체장치의 제조방법
FR2646963B1 (fr)	1992-05-15	Structure d'un transistor a base permeable et son procede de fabrication
KR900012331A (ko)	1990-08-03	반도체장치의 제조방법
KR900012342A (ko)	1990-08-03	반도체장치의 제조방법
KR900013613A (ko)	1990-09-05	반도체장치의 제조방법
EP0646952A3 (fr)	1995-12-27	Dispositif à semi-conducteur bipolaire et son procédé de fabrication.
KR910007144A (ko)	1991-04-30	캐리어 라이프타임을 제어하는 반도체 디바이스 및 이의 제조 방법
KR900013619A (ko)	1990-09-06	반도체장치의 제조방법
KR910007132A (ko)	1991-04-30	반도체장치의 제조방법

Legal Events

Date	Code	Title	Description
2001-04-13	TP	Transmission of property
2003-05-02	ST	Notification of lapse