[go: up one dir, main page]

DE69014454D1 - Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung. - Google Patents

Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung.

Info

Publication number
DE69014454D1
DE69014454D1 DE69014454T DE69014454T DE69014454D1 DE 69014454 D1 DE69014454 D1 DE 69014454D1 DE 69014454 T DE69014454 T DE 69014454T DE 69014454 T DE69014454 T DE 69014454T DE 69014454 D1 DE69014454 D1 DE 69014454D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
high voltage
voltage semiconductor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69014454T
Other languages
English (en)
Other versions
DE69014454T2 (de
Inventor
Denis Jaume
Georges Charitat
Lavigne Andre Peyre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Components Industries LLC
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Publication of DE69014454D1 publication Critical patent/DE69014454D1/de
Application granted granted Critical
Publication of DE69014454T2 publication Critical patent/DE69014454T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
DE69014454T 1989-07-21 1990-05-25 Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung. Expired - Fee Related DE69014454T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8909897A FR2650122B1 (fr) 1989-07-21 1989-07-21 Dispositif semi-conducteur a haute tension et son procede de fabrication

Publications (2)

Publication Number Publication Date
DE69014454D1 true DE69014454D1 (de) 1995-01-12
DE69014454T2 DE69014454T2 (de) 1995-06-22

Family

ID=9384046

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69014454T Expired - Fee Related DE69014454T2 (de) 1989-07-21 1990-05-25 Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung.

Country Status (9)

Country Link
US (1) US5060047A (de)
EP (1) EP0408868B1 (de)
JP (1) JP2580850B2 (de)
KR (1) KR940002768B1 (de)
CA (1) CA2021671C (de)
DE (1) DE69014454T2 (de)
ES (1) ES2064524T3 (de)
FR (1) FR2650122B1 (de)
MY (1) MY105940A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666174B1 (fr) * 1990-08-21 1997-03-21 Sgs Thomson Microelectronics Composant semiconducteur haute tension a faible courant de fuite.
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
JPH0799307A (ja) * 1993-09-29 1995-04-11 Fuji Electric Co Ltd 半導体装置およびその製造方法
US6489213B1 (en) * 1996-01-05 2002-12-03 Integrated Device Technology, Inc. Method for manufacturing semiconductor device containing a silicon-rich layer
US5677562A (en) * 1996-05-14 1997-10-14 General Instrument Corporation Of Delaware Planar P-N junction semiconductor structure with multilayer passivation
KR19990024988A (ko) * 1997-09-09 1999-04-06 윤종용 반절연 폴리실리콘막을 이용한 전력 반도체장치의 제조방법
KR100297703B1 (ko) * 1998-02-24 2001-08-07 김덕중 반절연폴리실리콘(sipos)을이용한전력반도체장치및그제조방법
EP0977264B1 (de) * 1998-07-31 2006-04-26 Freescale Semiconductor, Inc. Halbleiterstruktur für Treiberschaltkreise mit Pegelverschiebung
KR100343151B1 (ko) 1999-10-28 2002-07-05 김덕중 Ｓｉｐｏｓ를 이용한 고전압 반도체소자 및 그 제조방법
JP2007507877A (ja) * 2003-09-30 2007-03-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 絶縁された金属領域を備えたフィールドプレートを有する横方向薄膜ｓｏｉデバイス
US7279390B2 (en) * 2005-03-21 2007-10-09 Semiconductor Components Industries, L.L.C. Schottky diode and method of manufacture
US7820473B2 (en) * 2005-03-21 2010-10-26 Semiconductor Components Industries, Llc Schottky diode and method of manufacture
US7821095B2 (en) * 2006-07-14 2010-10-26 Semiconductor Components Industries, Llc Method of forming a Schottky diode and structure therefor
US8884378B2 (en) 2010-11-03 2014-11-11 Infineon Technologies Ag Semiconductor device and a method for manufacturing a semiconductor device
CN103021801B (zh) * 2011-09-22 2015-07-15 北大方正集团有限公司 掺氧半绝缘多晶硅膜及其制作方法
CN106783608B (zh) * 2016-12-22 2019-10-25 株洲中车时代电气股份有限公司 一种终端结构及其制作方法和功率半导体器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979782A (de) * 1972-12-08 1974-08-01
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
JPS56131954A (en) * 1980-03-19 1981-10-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS577959A (en) * 1980-06-19 1982-01-16 Toshiba Corp Semiconductor device
JPS5853860A (ja) * 1981-09-26 1983-03-30 Toshiba Corp 高耐圧プレ−ナ型半導体装置
JPS5934638A (ja) * 1982-08-20 1984-02-25 Matsushita Electronics Corp 半導体装置
US4583106A (en) * 1983-08-04 1986-04-15 International Business Machines Corporation Fabrication methods for high performance lateral bipolar transistors
US4647958A (en) * 1984-04-16 1987-03-03 Trw Inc. Bipolar transistor construction
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
JPS63184364A (ja) * 1987-01-27 1988-07-29 Toshiba Corp 半導体装置の製造方法
USH665H (en) * 1987-10-19 1989-08-01 Bell Telephone Laboratories, Incorporated Resistive field shields for high voltage devices

Also Published As

Publication number Publication date
EP0408868B1 (de) 1994-11-30
JP2580850B2 (ja) 1997-02-12
EP0408868A2 (de) 1991-01-23
FR2650122B1 (fr) 1991-11-08
MY105940A (en) 1995-02-28
ES2064524T3 (es) 1995-02-01
FR2650122A1 (fr) 1991-01-25
CA2021671A1 (en) 1991-01-22
US5060047A (en) 1991-10-22
EP0408868A3 (en) 1991-03-20
JPH0358429A (ja) 1991-03-13
CA2021671C (en) 1993-11-02
DE69014454T2 (de) 1995-06-22
KR940002768B1 (ko) 1994-04-02
KR910003829A (ko) 1991-02-28

Similar Documents

Publication Publication Date Title
DE3689735D1 (de) Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
DE69209678D1 (de) Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung
DE69026353D1 (de) Feldemissionsvorrichtung und Verfahren zur Herstellung derselben
DE69025842D1 (de) Lichtemittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE3888885D1 (de) Halbleiteranordnung und verfahren zur herstellung.
DE68924132D1 (de) Halbleiterbauteil und Verfahren zur dessen Herstellung.
DE69032451D1 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
EP0594994A3 (de) Diamant-Halbleiter und Verfahren zur Herstellung.
DE69431023D1 (de) Halbleiteraufbau und Verfahren zur Herstellung
DE69027368D1 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE69014454D1 (de) Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung.
DE3856150D1 (de) Halbleiteranordnung und verfahren zur herstellung
DE69229314D1 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69033900D1 (de) Halbleiteranordnung und Verfahren zu seiner Herstellung
KR910002005A (ko) 바이폴라트랜지스터와 그 제조방법
DE69022346D1 (de) MOS-Feldeffekttransistor und Verfahren zur Herstellung.
DE68923686D1 (de) Halbleiterkarte und verfahren zur herstellung.
DE68916182D1 (de) Halbleitereinrichtung, z.B. Feldeffekttransistor, und Verfahren zur Herstellung derselben.
DE69433738D1 (de) Halbleiteranordnung mit Schottky-Elektrode und Verfahren zur Herstellung
DE68914927D1 (de) Halbleiteranordnung vom mit Plastik umhüllten Typ und Verfahren zur Herstellung derselben.
DE69227290D1 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69132995D1 (de) Kontakt für Halbleiteranordnung und Verfahren zur Herstellung
DE69113725D1 (de) Leistungstransistor und Verfahren zur Herstellung.
DE69128406D1 (de) Lateraler MOSFET und Verfahren zur Herstellung
DE3788841D1 (de) Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. (N.D.GE

8339 Ceased/non-payment of the annual fee