DE69022346D1 - MOS-Feldeffekttransistor und Verfahren zur Herstellung. - Google Patents

MOS-Feldeffekttransistor und Verfahren zur Herstellung.

Info

Publication number: DE69022346D1
Authority: DE; Germany
Prior art keywords: manufacturing; field effect; effect transistor; mos field; mos
Prior art date: 1989-10-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69022346T

Other languages

English (en)

Other versions

DE69022346T2 (de

Inventor

Tomohisa Mizuno

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-10-09

Filing date

1990-10-09

Publication date

1995-10-19

1990-10-09 Application filed by Toshiba Corp filed Critical Toshiba Corp

1995-10-19 Publication of DE69022346D1 publication Critical patent/DE69022346D1/de

1996-04-04 Application granted granted Critical

1996-04-04 Publication of DE69022346T2 publication Critical patent/DE69022346T2/de

2010-10-10 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer

DE69022346T 1989-10-09 1990-10-09 MOS-Feldeffekttransistor und Verfahren zur Herstellung. Expired - Fee Related DE69022346T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP26205989		1989-10-09

Publications (2)

Publication Number	Publication Date
DE69022346D1 true DE69022346D1 (de)	1995-10-19
DE69022346T2 DE69022346T2 (de)	1996-04-04

Family

ID=17370460

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69022346T Expired - Fee Related DE69022346T2 (de)	1989-10-09	1990-10-09	MOS-Feldeffekttransistor und Verfahren zur Herstellung.

Country Status (5)

Country	Link
US (1)	US5698883A (de)
EP (1)	EP0422901B1 (de)
JP (1)	JPH0834313B2 (de)
KR (1)	KR910008857A (de)
DE (1)	DE69022346T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0490535B1 (de) *	1990-12-07	1996-08-21	AT&T Corp.	Feldeffekttransistor mit inverser T-förmiger Silizid-Torelektrode
JPH0629524A (ja) *	1992-04-14	1994-02-04	Toshiba Corp	半導体装置の製造方法
JP3587537B2 (ja) *	1992-12-09	2004-11-10	株式会社半導体エネルギー研究所	半導体装置
CA2156727C (en) *	1993-02-23	2001-01-16	Albert W. Vinal, Deceased	High saturation current, low leakage current fermi threshold field effect transistor
JP3256084B2 (ja) *	1994-05-26	2002-02-12	株式会社半導体エネルギー研究所	半導体集積回路およびその作製方法
US5714413A (en) *	1995-12-11	1998-02-03	Intel Corporation	Method of making a transistor having a deposited dual-layer spacer structure
US5952720A (en) *	1996-05-06	1999-09-14	United Microelectronics Corp.	Buried contact structure
US5672525A (en) *	1996-05-23	1997-09-30	Chartered Semiconductor Manufacturing Pte Ltd.	Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity
JPH10178172A (ja)	1996-12-17	1998-06-30	Toshiba Corp	半導体装置及びその製造方法
US6251763B1 (en) *	1997-06-30	2001-06-26	Kabushiki Kaisha Toshiba	Semiconductor device and method for manufacturing same
US6271563B1 (en) *	1998-07-27	2001-08-07	Advanced Micro Devices, Inc.	MOS transistor with high-K spacer designed for ultra-large-scale integration
KR100338099B1 (ko) *	1999-06-29	2002-05-24	박종섭	반도체 소자의 제조 방법
JP2002212537A (ja) *	2001-01-24	2002-07-31	Sony Chem Corp	接着剤及び電気装置
US6583016B1 (en) *	2002-03-26	2003-06-24	Advanced Micro Devices, Inc.	Doped spacer liner for improved transistor performance
US20050274994A1 (en) *	2004-06-14	2005-12-15	Rhodes Howard E	High dielectric constant spacer for imagers
US10515976B2 (en) *	2018-02-01	2019-12-24	United Microelectronics Corp.	Semiconductor device and method for fabricating the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4638347A (en) *	1982-12-07	1987-01-20	International Business Machines Corporation	Gate electrode sidewall isolation spacer for field effect transistors
JPS59124768A (ja) *	1982-12-29	1984-07-18	Fujitsu Ltd	不揮発性半導体記憶装置の製造方法
JPS59205759A (ja) *	1983-04-01	1984-11-21	Hitachi Ltd	Ｍｉｓ型電界効果トランジスタ
JPS59231864A (ja) *	1983-06-15	1984-12-26	Hitachi Ltd	半導体装置
JPS60158669A (ja) *	1984-01-28	1985-08-20	Sharp Corp	半導体装置
DE3581797D1 (de) *	1984-12-27	1991-03-28	Toshiba Kawasaki Kk	Misfet mit niedrigdotiertem drain und verfahren zu seiner herstellung.
JPH0650778B2 (ja) *	1985-08-20	1994-06-29	松下電器産業株式会社	薄膜トランジスタおよびその製造方法
EP0218408A3 (de) *	1985-09-25	1988-05-25	Hewlett-Packard Company	Verfahren zum Herstellen einer schwach dotierten Drainstruktur (LLD) in integrierten Schaltungen
JPS62156873A (ja) *	1985-12-28	1987-07-11	Toshiba Corp	半導体装置
JPS62160770A (ja) *	1986-01-09	1987-07-16	Toshiba Corp	絶縁ゲート型電界効果トランジスタおよびその製造方法
JPS62274665A (ja) *	1986-05-22	1987-11-28	Nec Corp	半導体装置の製造方法
US4894694A (en) *	1986-10-31	1990-01-16	Hewlett-Packard Company	MOSFET structure and method for making same
JPS63140580A (ja) *	1986-12-02	1988-06-13	Matsushita Electric Ind Co Ltd	薄膜トランジスタ
JPH0666328B2 (ja) *	1987-05-28	1994-08-24	松下電器産業株式会社	Ｍｏｓ型半導体装置
JPS63316476A (ja) *	1987-06-18	1988-12-23	Seiko Instr & Electronics Ltd	半導体装置およびその製造方法
JPS64761A (en) *	1987-06-23	1989-01-05	Seiko Epson Corp	Semiconductor device
JPH01125977A (ja) *	1987-11-11	1989-05-18	Toshiba Corp	Ｍｏｓ型半導体装置
JP2667857B2 (ja) *	1988-02-12	1997-10-27	株式会社日立製作所	半導体装置およびその製造方法
JPH01264265A (ja) *	1988-04-15	1989-10-20	Hitachi Ltd	半導体装置およびその製造方法

1990
- 1990-08-15 JP JP2215484A patent/JPH0834313B2/ja not_active Expired - Lifetime
- 1990-10-08 KR KR1019900015933A patent/KR910008857A/ko not_active Withdrawn
- 1990-10-09 DE DE69022346T patent/DE69022346T2/de not_active Expired - Fee Related
- 1990-10-09 EP EP90311059A patent/EP0422901B1/de not_active Expired - Lifetime
1996
- 1996-05-28 US US08/654,754 patent/US5698883A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0422901A1 (de)	1991-04-17
US5698883A (en)	1997-12-16
JPH0834313B2 (ja)	1996-03-29
KR910008857A (ko)	1991-05-31
EP0422901B1 (de)	1995-09-13
JPH03204941A (ja)	1991-09-06
DE69022346T2 (de)	1996-04-04

Publication	Publication Date	Title
DE69413860D1 (de)	1998-11-19	Transistoren und Verfahren zur Herstellung
DE3789894D1 (de)	1994-06-30	MOS-Feldeffekttransistor und dessen Herstellungsmethode.
DE69632567D1 (de)	2004-07-01	MOS-Transistor und Verfahren zur Herstellung desselben
DE3682021D1 (de)	1991-11-21	Polysilizium-mos-transistor und verfahren zu seiner herstellung.
DE69111963D1 (de)	1995-09-14	Dünnfilm-Transistor und Verfahren zur Herstellung.
DE69715802D1 (de)	2002-10-31	Quantentopf-mos-transistor und verfahren zur herstellung
DE69419871D1 (de)	1999-09-09	Doppelt-implantierte MOS-Anordnung mit seitlicher Diffusion und Verfahren zur Herstellung
DE3650323D1 (de)	1995-06-22	VLSI-Chip und Verfahren zur Herstellung.
DE3681934D1 (de)	1991-11-21	Integrierter mos-transistor und verfahren zu seiner herstellung.
EP0568269A3 (de)	1995-04-19	Diode und Verfahren zur Herstellung.
DE3888885D1 (de)	1994-05-11	Halbleiteranordnung und verfahren zur herstellung.
DE69124009D1 (de)	1997-02-20	Dünnfilmtransistor und Verfahren zur Herstellung
DE69034157D1 (de)	2004-09-30	Bipolartransistor mit isolierter Gate-Elektrode und Verfahren zur Herstellung
EP0594994A3 (de)	1994-10-05	Diamant-Halbleiter und Verfahren zur Herstellung.
DE69431023D1 (de)	2002-08-29	Halbleiteraufbau und Verfahren zur Herstellung
DE69022346D1 (de)	1995-10-19	MOS-Feldeffekttransistor und Verfahren zur Herstellung.
DE69331217D1 (de)	2002-01-10	Transistor, Verstärker mit diesem Transistor und Verfahren zur Herstellung dieses Transistors
DE69621088D1 (de)	2002-06-13	Bipolartransistor und Verfahren zur Herstellung
DE69624278D1 (de)	2002-11-21	Bipolartransistor und Verfahren zur Herstellung
KR960009213A (ko)	1996-03-22	개량된 바이폴라 트랜지스터 및 그 제조 방법
DE69425748D1 (de)	2000-10-05	Transistoren und verfahren zur herstellung
KR910002005A (ko)	1991-01-31	바이폴라트랜지스터와 그 제조방법
DE69014454D1 (de)	1995-01-12	Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung.
DE68916182D1 (de)	1994-07-21	Halbleitereinrichtung, z.B. Feldeffekttransistor, und Verfahren zur Herstellung derselben.
DE69427913D1 (de)	2001-09-13	Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung

Legal Events

Date	Code	Title
1996-10-10	8364	No opposition during term of opposition
1998-12-10	8320	Willingness to grant licences declared (paragraph 23)
2009-08-20	8339	Ceased/non-payment of the annual fee