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FR2638898B1 - Dispositif a semiconducteurs a structure empilee et procede de fabrication - Google Patents

Dispositif a semiconducteurs a structure empilee et procede de fabrication

Info

Publication number
FR2638898B1
FR2638898B1 FR898914445A FR8914445A FR2638898B1 FR 2638898 B1 FR2638898 B1 FR 2638898B1 FR 898914445 A FR898914445 A FR 898914445A FR 8914445 A FR8914445 A FR 8914445A FR 2638898 B1 FR2638898 B1 FR 2638898B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
stacked structure
stacked
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR898914445A
Other languages
English (en)
Other versions
FR2638898A1 (fr
Inventor
Kazuyuki Sugahara
Shigeru Kusunoki
Takashi Ipposhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1196167A external-priority patent/JPH02263465A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2638898A1 publication Critical patent/FR2638898A1/fr
Application granted granted Critical
Publication of FR2638898B1 publication Critical patent/FR2638898B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
FR898914445A 1988-11-05 1989-11-03 Dispositif a semiconducteurs a structure empilee et procede de fabrication Expired - Lifetime FR2638898B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27963188 1988-11-05
JP1196167A JPH02263465A (ja) 1988-11-05 1989-07-27 積層型半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
FR2638898A1 FR2638898A1 (fr) 1990-05-11
FR2638898B1 true FR2638898B1 (fr) 1991-04-12

Family

ID=26509580

Family Applications (1)

Application Number Title Priority Date Filing Date
FR898914445A Expired - Lifetime FR2638898B1 (fr) 1988-11-05 1989-11-03 Dispositif a semiconducteurs a structure empilee et procede de fabrication

Country Status (3)

Country Link
US (1) US5006913A (fr)
DE (1) DE3936677A1 (fr)
FR (1) FR2638898B1 (fr)

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JP2598328B2 (ja) * 1989-10-17 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
US5602403A (en) * 1991-03-01 1997-02-11 The United States Of America As Represented By The Secretary Of The Navy Ion Implantation buried gate insulator field effect transistor
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CN100440513C (zh) * 2004-10-15 2008-12-03 中国科学院上海微系统与信息技术研究所 一种三维互补金属氧化物半导体器件结构的制备方法
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Also Published As

Publication number Publication date
FR2638898A1 (fr) 1990-05-11
US5006913A (en) 1991-04-09
DE3936677C2 (fr) 1993-03-04
DE3936677A1 (de) 1990-05-10

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Effective date: 20080930