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FI943504A - LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä - Google Patents

LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä Download PDF

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Publication number
FI943504A
FI943504A FI943504A FI943504A FI943504A FI 943504 A FI943504 A FI 943504A FI 943504 A FI943504 A FI 943504A FI 943504 A FI943504 A FI 943504A FI 943504 A FI943504 A FI 943504A
Authority
FI
Finland
Prior art keywords
semiconductor device
manufacturing process
manufacturing
semiconductor
Prior art date
Application number
FI943504A
Other languages
English (en)
Swedish (sv)
Other versions
FI114054B (fi
FI943504A0 (fi
Inventor
Takeshi Ikeda
Tsutomu Nakanishi
Akira Okamoto
Original Assignee
Tif Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34147693A external-priority patent/JP3597879B2/ja
Priority claimed from JP13363994A external-priority patent/JP3474636B2/ja
Application filed by Tif Co Ltd filed Critical Tif Co Ltd
Publication of FI943504A0 publication Critical patent/FI943504A0/fi
Publication of FI943504A publication Critical patent/FI943504A/fi
Application granted granted Critical
Publication of FI114054B publication Critical patent/FI114054B/fi

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/0115Frequency selective two-port networks comprising only inductors and capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/0123Frequency selective two-port networks comprising distributed impedance elements together with lumped impedance elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/20Inductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021Constructional details
    • H03H2001/0064Constructional details comprising semiconductor material
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021Constructional details
    • H03H2001/0071Constructional details comprising zig-zag inductor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021Constructional details
    • H03H2001/0078Constructional details comprising spiral inductor on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Filters And Equalizers (AREA)
FI943504A 1993-07-26 1994-07-26 LC-elementti, menetelmä LC-elementin käyttämiseksi ja piiri, joka käsittää LC-elementin FI114054B (fi)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP20362393 1993-07-26
JP20362393 1993-07-26
JP29428293 1993-10-29
JP29428293 1993-10-29
JP34147693A JP3597879B2 (ja) 1993-10-29 1993-12-10 Lc素子,半導体装置
JP34147693 1993-12-10
JP13363994 1994-05-24
JP13363994A JP3474636B2 (ja) 1993-07-26 1994-05-24 Lc素子,半導体装置及びlc素子の製造方法

Publications (3)

Publication Number Publication Date
FI943504A0 FI943504A0 (fi) 1994-07-26
FI943504A true FI943504A (fi) 1995-01-27
FI114054B FI114054B (fi) 2004-07-30

Family

ID=27471773

Family Applications (1)

Application Number Title Priority Date Filing Date
FI943504A FI114054B (fi) 1993-07-26 1994-07-26 LC-elementti, menetelmä LC-elementin käyttämiseksi ja piiri, joka käsittää LC-elementin

Country Status (7)

Country Link
US (2) US5500552A (fi)
EP (1) EP0637842B1 (fi)
KR (1) KR100299714B1 (fi)
CN (1) CN1110096C (fi)
DE (1) DE69430091T2 (fi)
FI (1) FI114054B (fi)
TW (1) TW250591B (fi)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2301706A (en) * 1995-06-01 1996-12-11 Plessey Semiconductors Ltd Intergrated inductor arrangement
US5831331A (en) * 1996-11-22 1998-11-03 Philips Electronics North America Corporation Self-shielding inductor for multi-layer semiconductor integrated circuits
US6885275B1 (en) * 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
GB2353139B (en) * 1999-08-12 2001-08-29 United Microelectronics Corp Inductor and method of manufacturing the same
DE10232642B4 (de) 2002-07-18 2006-11-23 Infineon Technologies Ag Integrierte Transformatoranordnung
US7230316B2 (en) * 2002-12-27 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transferred integrated circuit
JP2004228188A (ja) * 2003-01-21 2004-08-12 Renesas Technology Corp 半導体装置
US7425485B2 (en) * 2005-09-30 2008-09-16 Freescale Semiconductor, Inc. Method for forming microelectronic assembly
US20080251275A1 (en) * 2007-04-12 2008-10-16 Ralph Morrison Decoupling Transmission Line
US8212155B1 (en) * 2007-06-26 2012-07-03 Wright Peter V Integrated passive device
KR20090061974A (ko) * 2007-12-12 2009-06-17 한국전자통신연구원 동작 주파수가 가변되는 자기장 강화 장치
JP2010080926A (ja) * 2008-08-29 2010-04-08 Toshiba Lighting & Technology Corp Led点灯装置および照明器具
KR102072803B1 (ko) * 2013-04-12 2020-02-04 삼성디스플레이 주식회사 박막 반도체 장치 및 유기 발광 표시 장치
US9461222B1 (en) * 2015-06-30 2016-10-04 Epistar Corporation Light-emitting element and the light-emitting module thereof
US11164694B2 (en) * 2019-09-27 2021-11-02 Apple Inc. Low-spurious electric-field inductor design
US11735519B2 (en) * 2021-06-24 2023-08-22 Xilinx, Inc. In-package passive inductive element for reflection mitigation

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504430A (en) * 1966-06-27 1970-04-07 Hitachi Ltd Method of making semiconductor devices having insulating films
GB2103012A (en) * 1981-07-03 1983-02-09 Clarion Co Ltd Variable capacitor
JPS594144A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
US4619001A (en) * 1983-08-02 1986-10-21 Matsushita Electric Industrial Co., Ltd. Tuning systems on dielectric substrates
US4737830A (en) * 1986-01-08 1988-04-12 Advanced Micro Devices, Inc. Integrated circuit structure having compensating means for self-inductance effects
US4720467A (en) * 1986-09-29 1988-01-19 International Business Machines Corporation Method of forming a capacitor-transistor integrated circuit
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
JP2732089B2 (ja) * 1988-10-14 1998-03-25 ローム株式会社 集積回路のコンデンサ形成方法
US5136357A (en) * 1989-06-26 1992-08-04 Micron Technology, Inc. Low-noise, area-efficient, high-frequency clock signal distribution line structure
JP3280019B2 (ja) * 1989-10-26 2002-04-30 新潟精密株式会社 Lcノイズフィルタ
JPH03190302A (ja) * 1989-12-19 1991-08-20 Mitsubishi Electric Corp 電界効果トランジスタを使用した共振回路
US5227659A (en) * 1990-06-08 1993-07-13 Trustees Of Boston University Integrated circuit inductor
JPH04326607A (ja) * 1991-04-26 1992-11-16 Sumitomo Electric Ind Ltd 発振回路
JP3045573B2 (ja) * 1991-08-19 2000-05-29 北川工業株式会社 電子部品、コンデンサおよび3端子ノイズフィルタの製造方法
US5431987A (en) * 1992-11-04 1995-07-11 Susumu Okamura Noise filter
US5370766A (en) * 1993-08-16 1994-12-06 California Micro Devices Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices

Also Published As

Publication number Publication date
KR100299714B1 (ko) 2001-10-22
FI114054B (fi) 2004-07-30
FI943504A0 (fi) 1994-07-26
KR950004609A (ko) 1995-02-18
EP0637842A1 (en) 1995-02-08
DE69430091T2 (de) 2002-10-31
TW250591B (fi) 1995-07-01
US5846845A (en) 1998-12-08
CN1110028A (zh) 1995-10-11
DE69430091D1 (de) 2002-04-18
CN1110096C (zh) 2003-05-28
EP0637842B1 (en) 2002-03-13
US5500552A (en) 1996-03-19

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MA Patent expired