[go: up one dir, main page]

DE69115079D1 - Nichtflüchtige Halbleitervorrichtung. - Google Patents

Nichtflüchtige Halbleitervorrichtung.

Info

Publication number
DE69115079D1
DE69115079D1 DE69115079T DE69115079T DE69115079D1 DE 69115079 D1 DE69115079 D1 DE 69115079D1 DE 69115079 T DE69115079 T DE 69115079T DE 69115079 T DE69115079 T DE 69115079T DE 69115079 D1 DE69115079 D1 DE 69115079D1
Authority
DE
Germany
Prior art keywords
semiconductor device
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69115079T
Other languages
English (en)
Other versions
DE69115079T2 (de
Inventor
Kuniyoshi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69115079D1 publication Critical patent/DE69115079D1/de
Application granted granted Critical
Publication of DE69115079T2 publication Critical patent/DE69115079T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
DE69115079T 1990-02-19 1991-02-19 Nichtflüchtige Halbleitervorrichtung. Expired - Fee Related DE69115079T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2036323A JP2807304B2 (ja) 1990-02-19 1990-02-19 不揮発性半導体装置

Publications (2)

Publication Number Publication Date
DE69115079D1 true DE69115079D1 (de) 1996-01-18
DE69115079T2 DE69115079T2 (de) 1996-05-15

Family

ID=12466630

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69115079T Expired - Fee Related DE69115079T2 (de) 1990-02-19 1991-02-19 Nichtflüchtige Halbleitervorrichtung.

Country Status (5)

Country Link
US (1) US5229632A (de)
EP (1) EP0443515B1 (de)
JP (1) JP2807304B2 (de)
KR (1) KR940005898B1 (de)
DE (1) DE69115079T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3104319B2 (ja) * 1991-08-29 2000-10-30 ソニー株式会社 不揮発性記憶装置
FR2683664A1 (fr) * 1991-11-13 1993-05-14 Sgs Thomson Microelectronics Memoire integree electriquement programmable a un seuil transistor.
JPH05326978A (ja) * 1992-05-21 1993-12-10 Rohm Co Ltd 半導体記憶装置およびその製造方法
KR970003845B1 (ko) * 1993-10-28 1997-03-22 금성일렉트론 주식회사 이이피롬 프래쉬 메모리 셀, 메모리 디바이스 및 그 제조방법
DE69428658T2 (de) * 1993-11-30 2002-06-20 Kabushiki Kaisha Toshiba, Kawasaki Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung
JP2643860B2 (ja) * 1994-10-26 1997-08-20 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
US5818082A (en) * 1996-03-04 1998-10-06 Advanced Micro Devices, Inc. E2 PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereof
US6876031B1 (en) * 1999-02-23 2005-04-05 Winbond Electronics Corporation Method and apparatus for split gate source side injection flash memory cell and array with dedicated erase gates
US6583471B1 (en) * 1999-06-02 2003-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having first and second insulating films
DE10106804A1 (de) * 2001-02-14 2002-09-05 Infineon Technologies Ag Informationsredundante nichtflüchtige Halbleiterspeicherzelle sowie Verfahren zu deren Herstellung und Programmierung
US6888755B2 (en) * 2002-10-28 2005-05-03 Sandisk Corporation Flash memory cell arrays having dual control gates per memory cell charge storage element
US7951669B2 (en) * 2006-04-13 2011-05-31 Sandisk Corporation Methods of making flash memory cell arrays having dual control gates per memory cell charge storage element
US20080165309A1 (en) * 2007-01-09 2008-07-10 Chi Mei Optoelectronics Corporation Transflective Liquid Crystal Display
US8929139B2 (en) 2011-04-13 2015-01-06 Macronix International Co., Ltd. Method and apparatus for leakage suppression in flash memory
US10825529B2 (en) 2014-08-08 2020-11-03 Macronix International Co., Ltd. Low latency memory erase suspend operation

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437174A (en) * 1981-01-19 1984-03-13 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device
JPS60117656A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 不揮発性半導体記憶装置
JPS61163660A (ja) * 1985-01-14 1986-07-24 Seiko Epson Corp 半導体記憶素子
JPS61241966A (ja) * 1985-04-19 1986-10-28 Hitachi Ltd 半導体装置およびその製造方法
JPS62165370A (ja) * 1986-01-16 1987-07-21 Toshiba Corp 不揮発性半導体記憶装置
JPS62229982A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 半導体記憶装置
JPS637667A (ja) * 1986-06-27 1988-01-13 Toshiba Corp 半導体記憶装置及びその製造方法
JPS63186478A (ja) * 1987-01-29 1988-08-02 Fujitsu Ltd Ｅｐｒｏｍセル
JPH0640588B2 (ja) * 1987-03-13 1994-05-25 株式会社東芝 半導体記憶装置
US4839705A (en) * 1987-12-16 1989-06-13 Texas Instruments Incorporated X-cell EEPROM array
JP2723247B2 (ja) * 1988-03-25 1998-03-09 株式会社東芝 不揮発性半導体メモリ装置
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5036378A (en) * 1989-11-01 1991-07-30 At&T Bell Laboratories Memory device

Also Published As

Publication number Publication date
EP0443515B1 (de) 1995-12-06
EP0443515A2 (de) 1991-08-28
KR910016084A (ko) 1991-09-30
JP2807304B2 (ja) 1998-10-08
US5229632A (en) 1993-07-20
KR940005898B1 (ko) 1994-06-24
JPH03240275A (ja) 1991-10-25
EP0443515A3 (en) 1992-03-25
DE69115079T2 (de) 1996-05-15

Similar Documents

Publication Publication Date Title
EP0588402A3 (de) Halbleiterspeicheranordnung.
DE69110480D1 (de) Verbesserter halbleiter-microanemometer.
DE69332857D1 (de) Halbleitervorrichtung.
DE69132354D1 (de) Halbleitervorrichtung
DE69130993D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69016153D1 (de) Nichtflüchtige Halbleiterspeicheranordnung.
DE69433543D1 (de) Halbleitervorrichtung.
DE69123666D1 (de) Halbleiterspeicheranordnung
DE69009448D1 (de) Halbleiterlaseranordnung.
DE69022537D1 (de) Halbleiterspeicheranordnung.
DE69121801D1 (de) Halbleiterspeicheranordnung
DE69123379D1 (de) Halbleiterspeichervorrichtung
DE69114808D1 (de) Harzummantelte Halbleiteranordnung.
DE69017518D1 (de) Halbleiterspeicheranordnung.
DE69001548D1 (de) Lichtemittierende halbleitervorrichtung.
DE69115079D1 (de) Nichtflüchtige Halbleitervorrichtung.
DE69015667D1 (de) Nichtflüchtiger Halbleiterspeicher.
DE69131118D1 (de) Halbleitereinheit
DE69014821D1 (de) Nichtflüchtige Speicheranordung.
DE69123814D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69109014D1 (de) Flip-Chip-Halbleiteranordnung.
DE69127494D1 (de) Halbleiteranordnung
DE69429567D1 (de) Nichtflüchtige Halbleiteranordnung
DE69114345D1 (de) Halbleiterspeichereinrichtung.
NL194628B (nl) Halfgeleiderelement.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee