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ES2069530T3 - Contactos ohmicos estables para peliculas delgadas de semiconductores ii-vi de tipo p que contengan telurio. - Google Patents

Contactos ohmicos estables para peliculas delgadas de semiconductores ii-vi de tipo p que contengan telurio.

Info

Publication number
ES2069530T3
ES2069530T3 ES87311187T ES87311187T ES2069530T3 ES 2069530 T3 ES2069530 T3 ES 2069530T3 ES 87311187 T ES87311187 T ES 87311187T ES 87311187 T ES87311187 T ES 87311187T ES 2069530 T3 ES2069530 T3 ES 2069530T3
Authority
ES
Spain
Prior art keywords
layer
contact
thin
deposited
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES87311187T
Other languages
English (en)
Inventor
Louis Frank Szabo
William Joseph Biter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Standard Oil Co
Original Assignee
Standard Oil Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Oil Co filed Critical Standard Oil Co
Application granted granted Critical
Publication of ES2069530T3 publication Critical patent/ES2069530T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F8/00—Arrangements for software engineering
    • G06F8/30—Creation or generation of source code
    • G06F8/31—Programming languages or programming paradigms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Devices For Executing Special Programs (AREA)

Abstract

UN CONTACTO OHMICO ESTABLE PARA PELICULAS DELGADAS DE SEMICONDUCTORES II-VI QUE CONTIENEN TELURO, TIPO P, Y DISPOSITIVOS FOTOVOLTAICOS QUE INCORPORAN TALES CONTACTOS. UN CONTACTO OHMICO DE ACUERDO CON LA INVENCION COMPRENDE UNA CAPA FORMADORA DE CONTACTO DEPOSITADA SOBRE UNA PELICULA DELGADA DE TIPO P DE UN SEMICONDUCTOR II-VI QUE CONTIENE TELURO. PREFERIBLEMENTE, LA CAPA QUE FORMA CONTACTO ES COBRE QUE TIENE UN ESPESOR DE 2 NM APROXIMADAMENTE. SE DEPOSITA UNA CAPA AISLANTE EN LA FORMADORA DE CONTACTO PARA AISLAR LAS CAPAS DEPOSITADAS SUBSIGUIENTEMENTE DE LA PELICULA DELGADA. LA CAPA AISLANTE PUEDE SER CARBONO O UNA CAPA DELGADA DE NIQUEL. SE DEPOSITA UNA CAPA DE CONEXION PARA UNIR UN CONDUCTOR ELECTRICO EXTERNO A LA CAPA AISLANTE. LA CAPA DE CONEXION PUEDE SER DE ALUMINIO, CROMO, O PUEDE SER UNA CAPA DE COBRE, PREVIENDO QUE ESTA SE RECUBRE CON UNA DE PLATA, ALUMINIO O UNA CAPA DELGADA DE NIQUEL, PREFERIBLEMENTE RECUBIERTA CON ALUMINIO. EL CONTACTO OHMICO ESTABLE SE PUEDE UTILIZAR COMO UN CONTACTO POSTERIOR EN UN DISPOSITIVO FOTOVOLTAICO QUE TIENE UNA PELICULA DELGADA DE UN SEMICONDUCTOR II-VI QUE CONTIENE TELURO COMO UNA DE LAS CAPAS DE SEMICONDUCTOR ACTIVAS EN EL DISPOSITIVO.
ES87311187T 1987-01-06 1987-12-18 Contactos ohmicos estables para peliculas delgadas de semiconductores ii-vi de tipo p que contengan telurio. Expired - Lifetime ES2069530T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/000,714 US4735662A (en) 1987-01-06 1987-01-06 Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors

Publications (1)

Publication Number Publication Date
ES2069530T3 true ES2069530T3 (es) 1995-05-16

Family

ID=21692710

Family Applications (1)

Application Number Title Priority Date Filing Date
ES87311187T Expired - Lifetime ES2069530T3 (es) 1987-01-06 1987-12-18 Contactos ohmicos estables para peliculas delgadas de semiconductores ii-vi de tipo p que contengan telurio.

Country Status (10)

Country Link
US (1) US4735662A (es)
EP (1) EP0274890B1 (es)
JP (2) JPH02502589A (es)
KR (1) KR0143915B1 (es)
AU (1) AU598333B2 (es)
BR (1) BR8800015A (es)
CA (1) CA1288852C (es)
DE (1) DE3751113T2 (es)
ES (1) ES2069530T3 (es)
MX (1) MX166509B (es)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
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US5141564A (en) * 1988-05-03 1992-08-25 The Boeing Company Mixed ternary heterojunction solar cell
US5196918A (en) * 1989-08-28 1993-03-23 Sumitomo Electric Industries, Ltd. Integrated circuit device and method for manufacturing the same
CN1111840A (zh) * 1991-05-15 1995-11-15 明尼苏达州采矿制造公司 蓝-绿激光二极管的制造方法
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
US5274269A (en) * 1991-05-15 1993-12-28 Minnesota Mining And Manufacturing Company Ohmic contact for p-type group II-IV compound semiconductors
US5291507A (en) * 1991-05-15 1994-03-01 Minnesota Mining And Manufacturing Company Blue-green laser diode
GB9123684D0 (en) * 1991-11-07 1992-01-02 Bp Solar Ltd Ohmic contacts
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer
US5296384A (en) * 1992-07-21 1994-03-22 Santa Barbara Research Center Bake-stable HgCdTe photodetector and method for fabricating same
EP0635892B1 (en) * 1992-07-21 2002-06-26 Raytheon Company Bake-stable HgCdTe photodetector and method for fabricating same
JPH06302599A (ja) * 1993-04-13 1994-10-28 Toshiba Corp 半導体装置およびその製造方法
US5412242A (en) * 1993-04-14 1995-05-02 Yeda Research And Development Co., Ltd. Semiconductor device with p-n junction based on dopant profile in equilibrium with internal electric field created by this junction
US6043548A (en) * 1993-04-14 2000-03-28 Yeda Research And Development Co., Ltd. Semiconductor device with stabilized junction
US5477088A (en) * 1993-05-12 1995-12-19 Rockett; Angus A. Multi-phase back contacts for CIS solar cells
US5557146A (en) * 1993-07-14 1996-09-17 University Of South Florida Ohmic contact using binder paste with semiconductor material dispersed therein
IL110390A0 (en) * 1993-07-21 1994-10-21 Photon Energy Inc Method for making a photovoltaic device
US5785236A (en) * 1995-11-29 1998-07-28 Advanced Micro Devices, Inc. Advanced copper interconnect system that is compatible with existing IC wire bonding technology
US5998235A (en) * 1997-06-26 1999-12-07 Lockheed Martin Corporation Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
US6144039A (en) * 1998-05-19 2000-11-07 Hshieh; Fwu-Iuan Low melting pads for instant electrical connections
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
WO2002091483A2 (en) * 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
GB2397944B (en) * 2002-01-29 2004-12-22 Univ Sheffield Hallam Thin film photovoltaic devices and methods of making the same
DE10239845C1 (de) * 2002-08-29 2003-12-24 Day4 Energy Inc Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul
US20070144577A1 (en) * 2005-12-23 2007-06-28 Rubin George L Solar cell with physically separated distributed electrical contacts
JP4993916B2 (ja) * 2006-01-31 2012-08-08 昭和シェル石油株式会社 Ｉｎハンダ被覆銅箔リボン導線及びその接続方法
US7498508B2 (en) 2006-02-24 2009-03-03 Day4 Energy, Inc. High voltage solar cell and solar cell module
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US20080092944A1 (en) * 2006-10-16 2008-04-24 Leonid Rubin Semiconductor structure and process for forming ohmic connections to a semiconductor structure
US20080290368A1 (en) * 2007-05-21 2008-11-27 Day4 Energy, Inc. Photovoltaic cell with shallow emitter
CN101884113B (zh) * 2007-12-11 2012-12-05 长青太阳能股份有限公司 具有细的指状物的光电板和电池及其制造方法
US20100275976A1 (en) * 2007-12-18 2010-11-04 Day4 Energy Inc. Photovoltaic module with edge access to pv strings, interconnection method, apparatus, and system
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
US8293568B2 (en) * 2008-07-28 2012-10-23 Day4 Energy Inc. Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process
US8187963B2 (en) 2010-05-24 2012-05-29 EncoreSolar, Inc. Method of forming back contact to a cadmium telluride solar cell
CN102347577B (zh) * 2010-07-27 2013-07-17 泰科电子(上海)有限公司 电连接系统和具有电连接系统的框架
US9159864B2 (en) 2013-07-25 2015-10-13 First Solar, Inc. Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices
DE102019205376B4 (de) * 2019-04-15 2024-10-10 Forschungszentrum Jülich Herstellen eines ohmschen Kontakts sowie elektronisches Bauelement mit ohmschem Kontakt
CN113782416B (zh) * 2021-09-13 2024-03-05 安徽光智科技有限公司 碲镉汞液相外延生长源衬底及其制备方法、碲镉汞液相外延生长方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
US4425194A (en) * 1976-06-08 1984-01-10 Monosolar, Inc. Photo-voltaic power generating means and methods
US4319069A (en) * 1980-07-25 1982-03-09 Eastman Kodak Company Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation
US4524378A (en) * 1980-08-04 1985-06-18 Hughes Aircraft Company Anodizable metallic contacts to mercury cadmium telleride
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
JPS5984579A (ja) * 1982-11-08 1984-05-16 Nippon Telegr & Teleph Corp <Ntt> シヨツトキ接合ゲ−ト形電界効果トランジスタ及びその製造方法
DE3328899C2 (de) * 1983-08-10 1985-07-11 Nukem Gmbh, 6450 Hanau Photovoltaische Zelle
US4456630A (en) * 1983-08-18 1984-06-26 Monosolar, Inc. Method of forming ohmic contacts
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4680611A (en) * 1984-12-28 1987-07-14 Sohio Commercial Development Co. Multilayer ohmic contact for p-type semiconductor and method of making same
US4650921A (en) * 1985-10-24 1987-03-17 Atlantic Richfield Company Thin film cadmium telluride solar cell

Also Published As

Publication number Publication date
DE3751113D1 (de) 1995-04-06
US4735662A (en) 1988-04-05
JP2742416B2 (ja) 1998-04-22
AU598333B2 (en) 1990-06-21
JPS63252427A (ja) 1988-10-19
JPH02502589A (ja) 1990-08-16
KR890011034A (ko) 1989-08-12
MX166509B (es) 1993-01-13
EP0274890B1 (en) 1995-03-01
AU1005788A (en) 1988-07-07
EP0274890A1 (en) 1988-07-20
DE3751113T2 (de) 1995-06-29
CA1288852C (en) 1991-09-10
KR0143915B1 (ko) 1998-08-17
BR8800015A (pt) 1988-08-02

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