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JPS56135968A - Amorphous silicon thin film transistor and manufacture thereof - Google Patents

Amorphous silicon thin film transistor and manufacture thereof

Info

Publication number
JPS56135968A
JPS56135968A JP3925180A JP3925180A JPS56135968A JP S56135968 A JPS56135968 A JP S56135968A JP 3925180 A JP3925180 A JP 3925180A JP 3925180 A JP3925180 A JP 3925180A JP S56135968 A JPS56135968 A JP S56135968A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
amorphous silicon
layers
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3925180A
Other languages
Japanese (ja)
Other versions
JPH0449269B2 (en
Inventor
Yoshiyuki Osada
Masao Sugata
Katsunori Hatanaka
Yukitoshi Okubo
Takashi Nakagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP3925180A priority Critical patent/JPS56135968A/en
Publication of JPS56135968A publication Critical patent/JPS56135968A/en
Publication of JPH0449269B2 publication Critical patent/JPH0449269B2/ja
Priority to JP5185043A priority patent/JPH06163591A/en
Priority to JP5185051A priority patent/JP2690446B2/en
Priority to JP5185044A priority patent/JP2714570B2/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Landscapes

  • Liquid Crystal (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To eliminate the distortion of VD-ID curve by a method wherein a gate electrode is formed on a semiconductor layer through an insulation layer, and N<+> layers are formed in parallel isolated from each other on a clean surface of the semiconductor layer. CONSTITUTION:An a-Si-TFT is formed on a substrate 106 made of glass, ceramics or the like by laminating in sequence a gate electrode 101, an electrical insulation layer 104 designed to cover the gate electrode 101 and a semiconductor layer 105 composed of hydrided and/or fluorided amorphous silicon, and constructed to have a structure in which the first N<+> layer 107-1, the second N<+> layer 107-2 are mounted isolated from each other in a parallel relation on the surface 108 of the semiconductor layer 105, and in addition, a source electrode 102 is mounted on the first N<+> layer 107-1 and a drain electrode 103 on the second N<+> layer 107-2, respectively. The N<+> layers are formed during the surface 108 of the semiconductor 105 being in the clean state just after the formation of the layer, thereby a satisfactory ohmic contact is formed on the interface of the semiconductor layer 105 and the N<+> layers 107.
JP3925180A 1980-03-27 1980-03-27 Amorphous silicon thin film transistor and manufacture thereof Granted JPS56135968A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3925180A JPS56135968A (en) 1980-03-27 1980-03-27 Amorphous silicon thin film transistor and manufacture thereof
JP5185043A JPH06163591A (en) 1980-03-27 1993-07-27 Method for manufacturing semiconductor device
JP5185051A JP2690446B2 (en) 1980-03-27 1993-07-27 Method for manufacturing amorphous silicon thin film transistor
JP5185044A JP2714570B2 (en) 1980-03-27 1993-07-27 Active matrix circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3925180A JPS56135968A (en) 1980-03-27 1980-03-27 Amorphous silicon thin film transistor and manufacture thereof

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP5185044A Division JP2714570B2 (en) 1980-03-27 1993-07-27 Active matrix circuit
JP5185051A Division JP2690446B2 (en) 1980-03-27 1993-07-27 Method for manufacturing amorphous silicon thin film transistor
JP5185043A Division JPH06163591A (en) 1980-03-27 1993-07-27 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS56135968A true JPS56135968A (en) 1981-10-23
JPH0449269B2 JPH0449269B2 (en) 1992-08-11

Family

ID=12547911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3925180A Granted JPS56135968A (en) 1980-03-27 1980-03-27 Amorphous silicon thin film transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56135968A (en)

Cited By (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898975A (en) * 1981-12-09 1983-06-13 Canon Inc Vertical gate thin film transistor and manufacture thereof
JPS58123770A (en) * 1982-01-18 1983-07-23 Semiconductor Energy Lab Co Ltd Insulated gate semiconductor device and its manufacturing method
JPS58127378A (en) * 1982-01-23 1983-07-29 Canon Inc Manufacture of semiconductor device
JPS58148458A (en) * 1982-03-01 1983-09-03 Stanley Electric Co Ltd Thin film transistor
JPS58158971A (en) * 1982-03-16 1983-09-21 Seiko Epson Corp thin film semiconductor device
JPS58169977A (en) * 1982-03-30 1983-10-06 Canon Inc Manufacture of thin film transistor
JPS58178564A (en) * 1982-04-13 1983-10-19 Seiko Epson Corp Thin film transistor
JPS58182272A (en) * 1982-04-19 1983-10-25 Seiko Epson Corp thin film transistor
JPS58182270A (en) * 1982-04-16 1983-10-25 Sanyo Electric Co Ltd Manufacture of transistor
JPS58186950A (en) * 1982-04-26 1983-11-01 Toshiba Corp Manufacture of thin film semiconductor device
JPS58201364A (en) * 1982-05-20 1983-11-24 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS5968975A (en) * 1982-10-12 1984-04-19 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS5975668A (en) * 1982-10-25 1984-04-28 Oki Electric Ind Co Ltd Manufacture of thin film transistor
JPS59115561A (en) * 1982-12-23 1984-07-04 Stanley Electric Co Ltd Manufacture of thin film transistor
JPS59168673A (en) * 1983-03-15 1984-09-22 Canon Inc semiconductor equipment
JPS6054478A (en) * 1983-09-06 1985-03-28 Toshiba Corp Manufacture of drive circuit substrate for display unit
JPS60134474A (en) * 1983-12-22 1985-07-17 Seiko Epson Corp Mos type amorphous semiconductor device
JPS60247756A (en) * 1984-05-23 1985-12-07 Matsushita Electric Ind Co Ltd Data base device
JPS60254661A (en) * 1984-05-14 1985-12-16 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Improved thin film field effect transistor compatible with integrated circuit and method of producing same
JPS6151878A (en) * 1984-08-21 1986-03-14 Seiko Instr & Electronics Ltd Manufacture of thin-film transistor
JPS61145869A (en) * 1984-12-19 1986-07-03 Matsushita Electric Ind Co Ltd thin film transistor
JPS61214476A (en) * 1985-03-19 1986-09-24 Agency Of Ind Science & Technol Thin-film transistor
JPS61214475A (en) * 1985-03-19 1986-09-24 Agency Of Ind Science & Technol Thin-film transistor
JPS6237966A (en) * 1985-08-12 1987-02-18 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor devices
JPS6298775A (en) * 1985-10-25 1987-05-08 Canon Inc Thin film transistor and its manufacturing method
EP0236526A1 (en) * 1986-03-12 1987-09-16 Itt Industries, Inc. Optical field effect transistor
JPS633463A (en) * 1986-06-24 1988-01-08 Agency Of Ind Science & Technol Manufacturing method of thin film transistor
JPS63219174A (en) * 1987-03-06 1988-09-12 Matsushita Electric Ind Co Ltd semiconductor equipment
JPS641274A (en) * 1987-06-24 1989-01-05 Hitachi Ltd Thin film transistor and manufacture thereof
JPS6459863A (en) * 1987-08-31 1989-03-07 Matsushita Electric Industrial Co Ltd Semiconductor device
JPH01128572A (en) * 1987-11-13 1989-05-22 Nippon Telegr & Teleph Corp <Ntt> Thin film transistor and manufacture thereof
JPH01183111A (en) * 1988-01-18 1989-07-20 Seiko Epson Corp Method for manufacturing polycrystalline silicon thin film
JPH01253965A (en) * 1988-04-01 1989-10-11 Toppan Printing Co Ltd Method for manufacturing thin film transistor array
JPH01259565A (en) * 1988-04-11 1989-10-17 Hitachi Ltd Thin film transistor and its manufacturing method
JPH02191374A (en) * 1989-01-19 1990-07-27 Sanyo Electric Co Ltd Manufacture of thin film transistor
JPH04355967A (en) * 1991-07-26 1992-12-09 Matsushita Electric Ind Co Ltd Semiconductor device
JPH06163899A (en) * 1982-03-16 1994-06-10 Seiko Epson Corp Thin film semiconductor device
JPH0758342A (en) * 1994-07-11 1995-03-03 Sony Corp Thin film transistor manufacturing method
JPH0774368A (en) * 1994-09-01 1995-03-17 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor device
US5485020A (en) * 1983-03-15 1996-01-16 Canon Kabushiki Kaisha Semiconductor device including a thin film transistor and a wiring portion having the same layered structure as and being integral with a source region or drain region of the transistor
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
JPH08213324A (en) * 1995-10-30 1996-08-20 Toshiba Corp Semiconductor device
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
JPH0915652A (en) * 1996-07-22 1997-01-17 Seiko Epson Corp Liquid crystal panel manufacturing method
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US6177302B1 (en) 1990-11-09 2001-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using multiple sputtering chambers
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6395652B2 (en) 1999-12-31 2002-05-28 Lg. Philips Lcd Co., Ltd. Method of manufacturing thin film transistor
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer

Cited By (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5898975A (en) * 1981-12-09 1983-06-13 Canon Inc Vertical gate thin film transistor and manufacture thereof
JPS58123770A (en) * 1982-01-18 1983-07-23 Semiconductor Energy Lab Co Ltd Insulated gate semiconductor device and its manufacturing method
JPS58127378A (en) * 1982-01-23 1983-07-29 Canon Inc Manufacture of semiconductor device
JPS58148458A (en) * 1982-03-01 1983-09-03 Stanley Electric Co Ltd Thin film transistor
JPS58158971A (en) * 1982-03-16 1983-09-21 Seiko Epson Corp thin film semiconductor device
JPH06163899A (en) * 1982-03-16 1994-06-10 Seiko Epson Corp Thin film semiconductor device
JPS58169977A (en) * 1982-03-30 1983-10-06 Canon Inc Manufacture of thin film transistor
US6242777B1 (en) 1982-04-13 2001-06-05 Seiko Epson Corporation Field effect transistor and liquid crystal devices including the same
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
JPS58178564A (en) * 1982-04-13 1983-10-19 Seiko Epson Corp Thin film transistor
JPS58182270A (en) * 1982-04-16 1983-10-25 Sanyo Electric Co Ltd Manufacture of transistor
JPS58182272A (en) * 1982-04-19 1983-10-25 Seiko Epson Corp thin film transistor
JPS58186950A (en) * 1982-04-26 1983-11-01 Toshiba Corp Manufacture of thin film semiconductor device
JPS58201364A (en) * 1982-05-20 1983-11-24 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS5968975A (en) * 1982-10-12 1984-04-19 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS5975668A (en) * 1982-10-25 1984-04-28 Oki Electric Ind Co Ltd Manufacture of thin film transistor
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
JPS59115561A (en) * 1982-12-23 1984-07-04 Stanley Electric Co Ltd Manufacture of thin film transistor
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
JPS59168673A (en) * 1983-03-15 1984-09-22 Canon Inc semiconductor equipment
US5485020A (en) * 1983-03-15 1996-01-16 Canon Kabushiki Kaisha Semiconductor device including a thin film transistor and a wiring portion having the same layered structure as and being integral with a source region or drain region of the transistor
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
JPS6054478A (en) * 1983-09-06 1985-03-28 Toshiba Corp Manufacture of drive circuit substrate for display unit
JPS60134474A (en) * 1983-12-22 1985-07-17 Seiko Epson Corp Mos type amorphous semiconductor device
JPS60254661A (en) * 1984-05-14 1985-12-16 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Improved thin film field effect transistor compatible with integrated circuit and method of producing same
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6734499B1 (en) 1984-05-18 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US6680486B1 (en) 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US6635520B1 (en) 1984-05-18 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
JPS60247756A (en) * 1984-05-23 1985-12-07 Matsushita Electric Ind Co Ltd Data base device
JPS6151878A (en) * 1984-08-21 1986-03-14 Seiko Instr & Electronics Ltd Manufacture of thin-film transistor
JPS61145869A (en) * 1984-12-19 1986-07-03 Matsushita Electric Ind Co Ltd thin film transistor
JPS61214476A (en) * 1985-03-19 1986-09-24 Agency Of Ind Science & Technol Thin-film transistor
JPS61214475A (en) * 1985-03-19 1986-09-24 Agency Of Ind Science & Technol Thin-film transistor
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JPS6237966A (en) * 1985-08-12 1987-02-18 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor devices
JPS6298775A (en) * 1985-10-25 1987-05-08 Canon Inc Thin film transistor and its manufacturing method
EP0236526A1 (en) * 1986-03-12 1987-09-16 Itt Industries, Inc. Optical field effect transistor
JPS633463A (en) * 1986-06-24 1988-01-08 Agency Of Ind Science & Technol Manufacturing method of thin film transistor
JPS63219174A (en) * 1987-03-06 1988-09-12 Matsushita Electric Ind Co Ltd semiconductor equipment
JPS641274A (en) * 1987-06-24 1989-01-05 Hitachi Ltd Thin film transistor and manufacture thereof
JPS6459863A (en) * 1987-08-31 1989-03-07 Matsushita Electric Industrial Co Ltd Semiconductor device
JPH01128572A (en) * 1987-11-13 1989-05-22 Nippon Telegr & Teleph Corp <Ntt> Thin film transistor and manufacture thereof
JPH01183111A (en) * 1988-01-18 1989-07-20 Seiko Epson Corp Method for manufacturing polycrystalline silicon thin film
JPH01253965A (en) * 1988-04-01 1989-10-11 Toppan Printing Co Ltd Method for manufacturing thin film transistor array
JPH01259565A (en) * 1988-04-11 1989-10-17 Hitachi Ltd Thin film transistor and its manufacturing method
JPH02191374A (en) * 1989-01-19 1990-07-27 Sanyo Electric Co Ltd Manufacture of thin film transistor
US6261877B1 (en) 1990-09-11 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6177302B1 (en) 1990-11-09 2001-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using multiple sputtering chambers
JPH04355967A (en) * 1991-07-26 1992-12-09 Matsushita Electric Ind Co Ltd Semiconductor device
JPH0758342A (en) * 1994-07-11 1995-03-03 Sony Corp Thin film transistor manufacturing method
JPH0774368A (en) * 1994-09-01 1995-03-17 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor device
JPH08213324A (en) * 1995-10-30 1996-08-20 Toshiba Corp Semiconductor device
JPH0915652A (en) * 1996-07-22 1997-01-17 Seiko Epson Corp Liquid crystal panel manufacturing method
US6395652B2 (en) 1999-12-31 2002-05-28 Lg. Philips Lcd Co., Ltd. Method of manufacturing thin film transistor

Also Published As

Publication number Publication date
JPH0449269B2 (en) 1992-08-11

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