JPH06163899A - Thin film semiconductor device - Google Patents
Thin film semiconductor deviceInfo
- Publication number
- JPH06163899A JPH06163899A JP51A JP19750893A JPH06163899A JP H06163899 A JPH06163899 A JP H06163899A JP 51 A JP51 A JP 51A JP 19750893 A JP19750893 A JP 19750893A JP H06163899 A JPH06163899 A JP H06163899A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- thin film
- silicon film
- film semiconductor
- channel portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
(57)【要約】
【目的】薄膜トランジスタのリーク電流を低減させる。
【構成】ＭＯＳ型薄膜半導体装置において、チャネル部
のシリコン膜厚は１０００Å以下とした薄膜半導体装
置。
(57) [Abstract] [Purpose] To reduce the leakage current of thin film transistors. [Structure] In a MOS type thin film semiconductor device, the silicon film thickness of the channel portion is 1000 Å or less.
Description
【０００１】[0001]
【産業上の利用分野】本発明はＭＯＳ型半導体装置の構
造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a MOS type semiconductor device.
【０００２】[0002]
【従来の技術】ＭＯＳ型半導体装置でスイッチングトラ
ンジスタアレイを形成した液晶表示パネルはグラフィッ
ク表示装置を小型化できる物として、携帯用機器の表示
装置への活用が注目されている。2. Description of the Related Art A liquid crystal display panel in which a switching transistor array is formed of a MOS type semiconductor device has been attracting attention as a display device for portable equipment as a graphic display device which can be miniaturized.
【０００３】[0003]
【発明が解決しようとする課題】しかし従来発表されて
いるスイッチングトランジスタアレイを有する液晶表示
パネルでは直射日光下及び裏面から照明を行った場合に
スイッチングトランジスタのリーク電流が増大し、キャ
パシタに蓄積された電荷が消失して表示機能が失なわれ
る欠点を有している。本発明は上記の薄膜半導体装置の
光−リーク特性を改善して液晶表示パネルの特性を向上
させる事を目的とする。However, in the liquid crystal display panel having the switching transistor array which has been conventionally disclosed, the leakage current of the switching transistor is increased and is accumulated in the capacitor when illuminated from the direct sunlight and the back surface. It has a drawback that the charge disappears and the display function is lost. It is an object of the present invention to improve the light-leakage characteristics of the above thin film semiconductor device and improve the characteristics of the liquid crystal display panel.
【０００４】[0004]
【課題を解決するための手段】そこで、本発明はＭＯＳ
型薄膜半導体装置において、チャネル部のシリコン膜厚
を１０００Å以下にすることにより、上述の課題を解決
するものである。Therefore, the present invention provides a MOS
In the thin film type semiconductor device, the above problem is solved by setting the silicon film thickness of the channel portion to 1000 Å or less.
【０００５】[0005]
【実施例】以下実施例に依って詳しく説明する。本発明
は上記の目的を達成するにチャネル部のシリコン膜厚を
従来の物と比較して薄くする。図１は本発明の薄膜半導
体装置の断面図である。チャネル部の多結晶シリコンも
しくは単結晶シリコン膜１は従来の薄膜半導体装置にお
いて２５００〜３０００Åが最も薄い値であったのに対
し、１０００Å以下の極めて薄いなくとする。シリコン
膜厚がチャネルが形成されるのに充分な厚さであればオ
ン電流はシリコン膜厚に依存せず、オフ電流は光照射が
無い場合でも有る場合でもシリコン膜厚の減少とともに
改善される。しかしゲート酸化膜２を多結晶シリコン膜
の酸化によって形成する場合には多結晶表面の凹凸を考
慮して残留シリコン膜厚を５００〜１０００Åとする事
が量産上妥当な値である。チャネル部のシリコン膜１の
厚さを少なくする事に依ってアルミ配線３、４とのコン
タクトが不良を生じる度合が大きくなる為に、チャネル
部のシリコン膜形成前または、形成後に、アルミ配線と
のコンタクト部分のみシリコン膜厚を大きくする事が必
要となる。図１はチャネル部のシリコン膜形成前に、コ
ンタクト部にシリコン膜５、６を形成した例である。Embodiments will be described in detail below with reference to embodiments. In the present invention, in order to achieve the above object, the thickness of the silicon film in the channel portion is reduced as compared with the conventional one. FIG. 1 is a sectional view of a thin film semiconductor device of the present invention. The polycrystalline silicon or single crystal silicon film 1 of the channel portion has an extremely thin value of 2500 to 3000 Å in the conventional thin film semiconductor device, but is extremely thin below 1000 Å. If the silicon film thickness is thick enough to form a channel, the on-current does not depend on the silicon film thickness, and the off-current is improved with the decrease of the silicon film thickness with and without light irradiation. .. However, when the gate oxide film 2 is formed by oxidizing the polycrystalline silicon film, it is a reasonable value for mass production to set the residual silicon film thickness to 500 to 1000Å in consideration of the irregularities on the polycrystalline surface. By reducing the thickness of the silicon film 1 in the channel portion, the degree of occurrence of defective contact with the aluminum wirings 3 and 4 increases. Therefore, before or after the formation of the silicon film in the channel portion, the aluminum wiring is not formed. It is necessary to increase the silicon film thickness only in the contact part. FIG. 1 shows an example in which the silicon films 5 and 6 are formed in the contact portion before the formation of the silicon film in the channel portion.
【０００６】以上述べた様に本発明の薄膜半導体装置を
有する液晶表示パネルは従来の物と比較して光の影響を
受けないので携帯用機器等の表示装置として大いに適し
ている。As described above, since the liquid crystal display panel having the thin film semiconductor device of the present invention is not affected by light as compared with the conventional one, it is very suitable as a display device for portable equipment and the like.
【図１】本発明の薄膜半導体装置の断面図である。FIG. 1 is a cross-sectional view of a thin film semiconductor device of the present invention.
１，５，６・・・シリコン膜 ２・・・ゲート酸化膜 ３，４・・・アルミ配線 1, 5, 6 ... Silicon film 2 ... Gate oxide film 3, 4 ... Aluminum wiring
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成５年９月８日[Submission date] September 8, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Name of item to be amended] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【特許請求の範囲】[Claims]
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００６[Correction target item name] 0006
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００６】以上述べた様に本発明の薄膜半導体装置を
有する液晶表示パネルは従来の物と比較して光の影響を
受けないので携帯用機器等の表示装置として大いに適し
ている。 As described above, since the liquid crystal display panel having the thin film semiconductor device of the present invention is not affected by light as compared with the conventional one, it is very suitable as a display device for portable equipment and the like.
【発明の効果】以上のような発明とすることにより、薄EFFECT OF THE INVENTION By the invention as described above,
膜トランジスタのＯＦＦ時のリーク電流を大幅に抑えるSignificantly suppresses leakage current when the film transistor is turned off
ことができる。be able to.
Claims (1)
ル部のシリコン膜厚は１０００Å以下である事を特徴と
する薄膜半導体装置。1. A thin film semiconductor device of the MOS type, wherein a silicon film thickness of a channel portion is 1000 Å or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5197508A JPH07118545B2 (en) | 1982-03-16 | 1993-08-09 | LCD display panel |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57041168A JPH0828507B2 (en) | 1982-03-16 | 1982-03-16 | Semiconductor device |
| JP5197508A JPH07118545B2 (en) | 1982-03-16 | 1993-08-09 | LCD display panel |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57041168A Division JPH0828507B2 (en) | 1982-03-16 | 1982-03-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06163899A true JPH06163899A (en) | 1994-06-10 |
| JPH07118545B2 JPH07118545B2 (en) | 1995-12-18 |
Family
ID=26380731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5197508A Expired - Lifetime JPH07118545B2 (en) | 1982-03-16 | 1993-08-09 | LCD display panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07118545B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5879976A (en) * | 1996-08-22 | 1999-03-09 | Sharp Kabushiki Kaisha | Thin film transistor and method for producing the same |
| US6670640B1 (en) | 1994-09-15 | 2003-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135968A (en) * | 1980-03-27 | 1981-10-23 | Canon Inc | Amorphous silicon thin film transistor and manufacture thereof |
-
1993
- 1993-08-09 JP JP5197508A patent/JPH07118545B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56135968A (en) * | 1980-03-27 | 1981-10-23 | Canon Inc | Amorphous silicon thin film transistor and manufacture thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6670640B1 (en) | 1994-09-15 | 2003-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| US5879976A (en) * | 1996-08-22 | 1999-03-09 | Sharp Kabushiki Kaisha | Thin film transistor and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07118545B2 (en) | 1995-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0777264B2 (en) | Method of manufacturing thin film transistor | |
| US5045905A (en) | Amorphous silicon thin film transistor | |
| US4885616A (en) | Thin film display device with thin amorphous channel | |
| JPS58158971A (en) | thin film semiconductor device | |
| JPH065465B2 (en) | Liquid crystal display device sealing structure | |
| JPH06163899A (en) | Thin film semiconductor device | |
| JPH0611729A (en) | Liquid crystal display device and its production | |
| US4979006A (en) | Reverse staggered type silicon thin film transistor | |
| JPH01192173A (en) | Manufacturing method of semiconductor device | |
| JP2639980B2 (en) | Liquid crystal display | |
| JPS60117690A (en) | Semiconductor device | |
| JPS62172758A (en) | Structure of thin film transistor | |
| JPH0472769A (en) | Thin film transistor | |
| JPH05249485A (en) | Active matrix liquid crystal display having thin-film transistor for switching | |
| JPS56162861A (en) | Semiconductor integrated circuit device | |
| EP0002107A3 (en) | Method of making a planar semiconductor device | |
| JPS57176757A (en) | Semiconductor device | |
| JP2867457B2 (en) | Method of manufacturing thin film transistor matrix | |
| JPS5635432A (en) | Manufacturing of mos integrated circuit device | |
| JPS56101758A (en) | Semiconductor device | |
| JPS5787176A (en) | Fabrication of semiconductor device | |
| JPH0563187A (en) | Semiconductor device | |
| JPS5688366A (en) | Semiconductor device | |
| JPH06130413A (en) | Liquid crystal display manufacturing method | |
| JPS54127289A (en) | Semiconductor integrated circuit device and its manufacture |