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DE69628633D1 - Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung - Google Patents

Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung

Info

Publication number
DE69628633D1
DE69628633D1 DE69628633T DE69628633T DE69628633D1 DE 69628633 D1 DE69628633 D1 DE 69628633D1 DE 69628633 T DE69628633 T DE 69628633T DE 69628633 T DE69628633 T DE 69628633T DE 69628633 D1 DE69628633 D1 DE 69628633D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
insulated gate
gate semiconductor
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69628633T
Other languages
English (en)
Other versions
DE69628633T2 (de
Inventor
Hideki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69628633D1 publication Critical patent/DE69628633D1/de
Application granted granted Critical
Publication of DE69628633T2 publication Critical patent/DE69628633T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H10D84/144—VDMOS having built-in components the built-in components being PN junction diodes in antiparallel diode configurations
DE69628633T 1996-04-01 1996-10-17 Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung Expired - Lifetime DE69628633T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP87867496 1996-04-01
JP07867496A JP3410286B2 (ja) 1996-04-01 1996-04-01 絶縁ゲート型半導体装置

Publications (2)

Publication Number Publication Date
DE69628633D1 true DE69628633D1 (de) 2003-07-17
DE69628633T2 DE69628633T2 (de) 2004-04-29

Family

ID=13668424

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69628633T Expired - Lifetime DE69628633T2 (de) 1996-04-01 1996-10-17 Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung

Country Status (5)

Country Link
US (2) US6118150A (de)
EP (1) EP0801425B1 (de)
JP (1) JP3410286B2 (de)
KR (3) KR100272057B1 (de)
DE (1) DE69628633T2 (de)

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DE19823170A1 (de) * 1998-05-23 1999-11-25 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
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US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
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JP4740523B2 (ja) * 2003-01-27 2011-08-03 ルネサスエレクトロニクス株式会社 絶縁ゲート型半導体装置
US6919248B2 (en) * 2003-03-14 2005-07-19 International Rectifier Corporation Angled implant for shorter trench emitter
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JP4749665B2 (ja) * 2003-12-12 2011-08-17 ローム株式会社 半導体装置
JP2006140372A (ja) * 2004-11-15 2006-06-01 Sanyo Electric Co Ltd 半導体装置およびその製造方法
WO2006082617A1 (ja) * 2005-01-31 2006-08-10 Shindengen Electric Manufacturing Co., Ltd. 半導体装置
EP1959495B1 (de) * 2005-11-22 2017-09-20 Shindengen Electric Manufacturing Co., Ltd. Graben-gate-leistungshalbleiterbauelement
JP4609656B2 (ja) * 2005-12-14 2011-01-12 サンケン電気株式会社 トレンチ構造半導体装置
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JP5040240B2 (ja) * 2006-09-29 2012-10-03 三菱電機株式会社 絶縁ゲート型半導体装置
JP5564161B2 (ja) * 2007-05-08 2014-07-30 ローム株式会社 半導体装置およびその製造方法
JP5210564B2 (ja) * 2007-07-27 2013-06-12 ルネサスエレクトロニクス株式会社 半導体装置
JP5223291B2 (ja) 2007-10-24 2013-06-26 富士電機株式会社 半導体装置の製造方法
WO2010125639A1 (ja) * 2009-04-28 2010-11-04 三菱電機株式会社 電力用半導体装置
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JP6270799B2 (ja) * 2011-05-16 2018-01-31 ルネサスエレクトロニクス株式会社 半導体装置
JP6164636B2 (ja) 2013-03-05 2017-07-19 ローム株式会社 半導体装置
JP6164604B2 (ja) 2013-03-05 2017-07-19 ローム株式会社 半導体装置
JP5808842B2 (ja) * 2014-06-18 2015-11-10 ローム株式会社 半導体装置
JP6197966B2 (ja) 2014-12-19 2017-09-20 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6600475B2 (ja) 2015-03-27 2019-10-30 ローム株式会社 半導体装置
WO2017006711A1 (ja) 2015-07-07 2017-01-12 富士電機株式会社 半導体装置
DE112016000210T5 (de) 2015-07-16 2017-09-07 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen der Halbleitervorrichtung
CN106653834A (zh) * 2015-09-22 2017-05-10 苏州东微半导体有限公司 一种半导体功率器件的制造方法
JP6624300B2 (ja) * 2016-10-17 2019-12-25 富士電機株式会社 半導体装置
US11532737B2 (en) * 2017-03-15 2022-12-20 Fuji Electric Co., Ltd. Semiconductor device
JP6930858B2 (ja) * 2017-05-24 2021-09-01 株式会社東芝 半導体装置
JP2019075411A (ja) 2017-10-12 2019-05-16 株式会社日立製作所 炭化ケイ素半導体装置、パワーモジュールおよび電力変換装置
JP6618591B2 (ja) * 2018-09-14 2019-12-11 三菱電機株式会社 電力用半導体装置
JP7085975B2 (ja) * 2018-12-17 2022-06-17 三菱電機株式会社 半導体装置
US11973132B2 (en) * 2019-04-01 2024-04-30 Mitsubishi Electric Corporation Semiconductor device comprising insulated gate bipolar transistor (IGBT), diode, and well region
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Also Published As

Publication number Publication date
KR100272057B1 (ko) 2000-11-15
USRE38953E1 (en) 2006-01-31
JPH09270512A (ja) 1997-10-14
EP0801425A1 (de) 1997-10-15
EP0801425B1 (de) 2003-06-11
KR100353605B1 (ko) 2002-09-27
JP3410286B2 (ja) 2003-05-26
DE69628633T2 (de) 2004-04-29
KR970072486A (ko) 1997-11-07
KR100392716B1 (ko) 2003-07-31
US6118150A (en) 2000-09-12

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