[go: up one dir, main page]

DE69431330D1 - Integrierte Schaltung mit einer leitfähigen Überkreuzung und Verfahren zu deren Herstellung - Google Patents

Integrierte Schaltung mit einer leitfähigen Überkreuzung und Verfahren zu deren Herstellung

Info

Publication number
DE69431330D1
DE69431330D1 DE69431330T DE69431330T DE69431330D1 DE 69431330 D1 DE69431330 D1 DE 69431330D1 DE 69431330 T DE69431330 T DE 69431330T DE 69431330 T DE69431330 T DE 69431330T DE 69431330 D1 DE69431330 D1 DE 69431330D1
Authority
DE
Germany
Prior art keywords
production
integrated circuit
conductive crossover
crossover
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69431330T
Other languages
English (en)
Other versions
DE69431330T2 (de
Inventor
Mike F Chang
King Owyang
Richard K Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of DE69431330D1 publication Critical patent/DE69431330D1/de
Application granted granted Critical
Publication of DE69431330T2 publication Critical patent/DE69431330T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69431330T 1993-08-04 1994-07-18 Integrierte Schaltung mit einer leitfähigen Überkreuzung und Verfahren zu deren Herstellung Expired - Fee Related DE69431330T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/101,886 US5426325A (en) 1993-08-04 1993-08-04 Metal crossover in high voltage IC with graduated doping control

Publications (2)

Publication Number Publication Date
DE69431330D1 true DE69431330D1 (de) 2002-10-17
DE69431330T2 DE69431330T2 (de) 2003-05-22

Family

ID=22286973

Family Applications (2)

Application Number Title Priority Date Filing Date
DE0637846T Pending DE637846T1 (de) 1993-08-04 1994-07-18 Metallüberkreuzung für Hochspannung-IC mit graduellem Datierungprofil.
DE69431330T Expired - Fee Related DE69431330T2 (de) 1993-08-04 1994-07-18 Integrierte Schaltung mit einer leitfähigen Überkreuzung und Verfahren zu deren Herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE0637846T Pending DE637846T1 (de) 1993-08-04 1994-07-18 Metallüberkreuzung für Hochspannung-IC mit graduellem Datierungprofil.

Country Status (4)

Country Link
US (1) US5426325A (de)
EP (1) EP0637846B1 (de)
JP (1) JP3084686B2 (de)
DE (2) DE637846T1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031272A (en) * 1994-11-16 2000-02-29 Matsushita Electric Industrial Co., Ltd. MOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel region
DE19526183C1 (de) * 1995-07-18 1996-09-12 Siemens Ag Verfahren zur Herstellung von mindestens zwei Transistoren in einem Halbleiterkörper
DE19536753C1 (de) * 1995-10-02 1997-02-20 El Mos Elektronik In Mos Techn MOS-Transistor mit hoher Ausgangsspannungsfestigkeit
JP3634086B2 (ja) 1996-08-13 2005-03-30 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
JP4014676B2 (ja) 1996-08-13 2007-11-28 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US6703671B1 (en) * 1996-08-23 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and method of manufacturing the same
JP4059939B2 (ja) * 1996-08-23 2008-03-12 株式会社半導体エネルギー研究所 パワーｍｏｓデバイス及びその作製方法
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
KR100500033B1 (ko) 1996-10-15 2005-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP4104701B2 (ja) 1997-06-26 2008-06-18 株式会社半導体エネルギー研究所 半導体装置
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP4236722B2 (ja) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6313489B1 (en) 1999-11-16 2001-11-06 Philips Electronics North America Corporation Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
US7719054B2 (en) * 2006-05-31 2010-05-18 Advanced Analogic Technologies, Inc. High-voltage lateral DMOS device
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
EP1635397A1 (de) * 2004-09-14 2006-03-15 STMicroelectronics S.r.l. Integriertes Leistungsbauelement mit verbessertem Randabschluss
TWI503893B (zh) 2008-12-30 2015-10-11 Vanguard Int Semiconduct Corp 半導體結構及其製作方法
US8618627B2 (en) 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
TWI609486B (zh) * 2016-12-30 2017-12-21 新唐科技股份有限公司 高壓半導體裝置
TWI609487B (zh) 2016-12-30 2017-12-21 新唐科技股份有限公司 半導體裝置
TWI634658B (zh) 2017-12-29 2018-09-01 新唐科技股份有限公司 半導體裝置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
JPS6484733A (en) * 1987-09-28 1989-03-30 Nec Corp Semiconductor device
IT1217214B (it) * 1988-04-27 1990-03-14 Sgs Thomson Microelectronics Circuito integrato per alta tensione con isolamento a giunzione
US5055896A (en) * 1988-12-15 1991-10-08 Siliconix Incorporated Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability
US4927772A (en) * 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
US5132753A (en) * 1990-03-23 1992-07-21 Siliconix Incorporated Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs

Also Published As

Publication number Publication date
EP0637846A2 (de) 1995-02-08
JPH07235597A (ja) 1995-09-05
EP0637846B1 (de) 2002-09-11
JP3084686B2 (ja) 2000-09-04
DE69431330T2 (de) 2003-05-22
US5426325A (en) 1995-06-20
EP0637846A3 (de) 1996-01-10
DE637846T1 (de) 1995-11-30

Similar Documents

Publication Publication Date Title
DE69431330D1 (de) Integrierte Schaltung mit einer leitfähigen Überkreuzung und Verfahren zu deren Herstellung
DE69431723D1 (de) Leiterplatte und verfahren zu deren herstellung
DE69404789D1 (de) Zinn-wismut-lötverbindung mit verbesserten hochtemperatureigenschaften und verfahren zu deren bildung.
DE69636010D1 (de) Gedruckte schaltungsplatte und verfahren zu deren herstellung
DE69411438D1 (de) Schaltungsanordnungen und Verfahren zu deren Herstellung
DE69530990D1 (de) Leiterplatte, verfahren zu deren herstellung und elektronische vorrichtungen
DE69532184D1 (de) Schlüssel mit elektronischem Bauelement und Verfahren zu seiner Herstellung
DE69128140D1 (de) Halbleiteranordnung mit einer Schaltungsplatte zum Zusammenschalten und Verfahren zur Herstellung
DE69332136D1 (de) Halbleiterbauelement mit einem Kontakt und Verfahren zu seiner Herstellung
KR960015789A (ko) 전자부품과 그 제조방법
DE69839486D1 (de) Gedruckte leiterplatte und verfahren zu deren herstellung
DE3581835D1 (de) Folie aus polymerisiertem kunststoff mit leitendem muster und verfahren zur herstellung derselben.
DE19781552T1 (de) Mehrschichtschaltung mit einer Durchgangsloch-Matrix-Zwischenschicht-Verbindung und Verfahren zu deren Herstellung
DE69729759D1 (de) Integrierte Schaltung oder Platine mit einer Höckerelektrode und Verfahren zu Ihrer Herstellung
DE69128334D1 (de) Integrierte Schaltung und Verfahren zu deren Herstellung
DE59410240D1 (de) Folienleiterplatten und verfahren zu deren herstellung
DE69702138D1 (de) Mit einer schaltungsanordnung ausgerüstetes fahrzeugteil und verfahren zu seiner herstellung
DE69317012D1 (de) Herstellungsverfahren einer Verbindungsstruktur in einer integrierten Schaltung
DE69123280D1 (de) Halbleitervorrichtung mit lichtempfindlichem Element und Verfahren zu deren Herstellung
DE59108343D1 (de) Elektrische Schaltungsanordnung und Verfahren zu deren Herstellung
DE69632893D1 (de) Photodetektorelement mit Schaltungselement und Verfahren zu dessen Herstellung
DE59610420D1 (de) Versorgungsspannungsaufbereitungsschaltung sowie datenträger mit einer versorgungsspannungsaufbereitungsschaltung
DE69027566D1 (de) Halbleiteranordnung mit einer Mehrschichten-Gateelektrode und Verfahren zu ihrer Herstellung
DE3586525D1 (de) Halbleiteranordnung mit einer integrierten schaltung und verfahren zu deren herstellung.
EP0649167A3 (de) Verfahren zur Herstellung einer ohmischen Elektrode mit einer mehrschichtigen Struktur.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee