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DE69123280D1 - Halbleitervorrichtung mit lichtempfindlichem Element und Verfahren zu deren Herstellung - Google Patents

Halbleitervorrichtung mit lichtempfindlichem Element und Verfahren zu deren Herstellung

Info

Publication number
DE69123280D1
DE69123280D1 DE69123280T DE69123280T DE69123280D1 DE 69123280 D1 DE69123280 D1 DE 69123280D1 DE 69123280 T DE69123280 T DE 69123280T DE 69123280 T DE69123280 T DE 69123280T DE 69123280 D1 DE69123280 D1 DE 69123280D1
Authority
DE
Germany
Prior art keywords
production
semiconductor device
photosensitive element
photosensitive
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123280T
Other languages
English (en)
Other versions
DE69123280T2 (de
Inventor
Masao Makiuchi
Hisashi Hamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2097489A external-priority patent/JP2847561B2/ja
Priority claimed from JP02172661A external-priority patent/JP3074606B2/ja
Priority claimed from JP2340151A external-priority patent/JP3014006B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69123280D1 publication Critical patent/DE69123280D1/de
Application granted granted Critical
Publication of DE69123280T2 publication Critical patent/DE69123280T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
DE69123280T 1990-04-16 1991-04-10 Halbleitervorrichtung mit lichtempfindlichem Element und Verfahren zu deren Herstellung Expired - Fee Related DE69123280T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2097489A JP2847561B2 (ja) 1990-04-16 1990-04-16 半導体受光素子
JP02172661A JP3074606B2 (ja) 1990-07-02 1990-07-02 半導体受光装置
JP2340151A JP3014006B2 (ja) 1990-11-30 1990-11-30 半導体装置

Publications (2)

Publication Number Publication Date
DE69123280D1 true DE69123280D1 (de) 1997-01-09
DE69123280T2 DE69123280T2 (de) 1997-03-20

Family

ID=27308411

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123280T Expired - Fee Related DE69123280T2 (de) 1990-04-16 1991-04-10 Halbleitervorrichtung mit lichtempfindlichem Element und Verfahren zu deren Herstellung

Country Status (3)

Country Link
US (1) US5107318A (de)
EP (1) EP0452801B1 (de)
DE (1) DE69123280T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179316A (en) * 1991-09-26 1993-01-12 Mcnc Electroluminescent display with space charge removal
US5365087A (en) * 1992-07-15 1994-11-15 Sumitomo Electric Industries, Ltd. Photodetector and opto-electronic integrated circuit with guard ring
US5378916A (en) * 1993-02-17 1995-01-03 Xerox Corporation Color imaging charge-coupled array with multiple photosensitive regions
US5494833A (en) * 1994-07-14 1996-02-27 The United States Of America As Represented By The Secretary Of The Air Force Backside illuminated MSM device method
JPH0888393A (ja) * 1994-09-19 1996-04-02 Fujitsu Ltd 半導体光検出装置およびその製造方法
DE19523606A1 (de) * 1995-06-30 1997-01-02 Forschungszentrum Juelich Gmbh Elektronisches Bauelement, sowie Verfahren zu seiner Herstellung
US5652435A (en) * 1995-09-01 1997-07-29 The United States Of America As Represented By The Secretary Of The Air Force Vertical structure schottky diode optical detector
JPH1197789A (ja) * 1997-09-17 1999-04-09 Fujitsu Ltd 半導体レーザ装置
DE19825294A1 (de) * 1998-06-05 1999-12-09 Univ Stuttgart Elektronisches Bauelement, Verfahren zur Herstellung desselben sowie elektronische Schaltung zur Bildverarbeitung
US20040145026A1 (en) * 2003-01-29 2004-07-29 Chi-Kuang Sun Photonic transmitter
KR100723457B1 (ko) * 2006-09-20 2007-05-31 (주)한비젼 반도체 소자
DE102007006211B3 (de) * 2007-02-08 2008-07-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heteroübergang-pin-Photodiode und deren Verwendung
JP4329829B2 (ja) * 2007-02-27 2009-09-09 株式会社デンソー 半導体装置
JP2011253987A (ja) 2010-06-03 2011-12-15 Mitsubishi Electric Corp 半導体受光素子及び光モジュール
US11309412B1 (en) * 2017-05-17 2022-04-19 Northrop Grumman Systems Corporation Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring
EP3891800A1 (de) * 2018-12-03 2021-10-13 MACOM Technology Solutions Holdings, Inc. Stiftdioden mit mehrschichtigen intrinsischen bereichen
WO2020167961A1 (en) 2019-02-12 2020-08-20 Macom Technology Solutions Holdings, Inc. Monolithic multi-i region diode limiters
US12199112B1 (en) * 2021-04-01 2025-01-14 National Technology & Engineering Solutions Of Sandia, Llc Epitaxially integrated protection diodes for monochromatic photosensitive diodes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4634883A (en) * 1984-02-09 1987-01-06 Fuji Electric Company Ltd. Image sensor comprising a plurality of photosensors and switches
US4885622A (en) * 1984-03-23 1989-12-05 Oki Electric Industry Co., Ltd. Pin photodiode and method of fabrication of the same
GB2212020B (en) * 1987-11-03 1991-07-10 Stc Plc Optical detectors.
JPH01194352A (ja) * 1988-01-28 1989-08-04 Fujitsu Ltd 受光素子及び集積化受信器
JP2675574B2 (ja) * 1988-04-11 1997-11-12 富士通株式会社 半導体受光素子
US5004903A (en) * 1989-03-31 1991-04-02 Nippon Steel Corporation Contact type image sensor device with specific capacitance ratio

Also Published As

Publication number Publication date
EP0452801A3 (en) 1992-05-13
EP0452801B1 (de) 1996-11-27
US5107318A (en) 1992-04-21
EP0452801A2 (de) 1991-10-23
DE69123280T2 (de) 1997-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee